Array substrate and manufacturing method thereof, display panel and display device
The invention provides an array substrate and a manufacturing method thereof, a display panel and a display device, the array substrate includes a base substrate, and a data line, a switching device and a voltage compensation module arranged on the base substrate, the switching device is connected between the data line and the voltage compensation module so that the data line is electrically connected to the voltage compensation module when a voltage on the data line is lower than a preset low voltage or higher than a preset high voltage. The array substrate uses a PN junction as the switching device between the data line and the voltage compensation module, and due to a low leakage current between a P terminal and an N terminal of the PN junction, the power consumption of the array substrate can be reduced.
1. An array substrate, including a base substrate, and a data line, a switching device and a voltage compensation module arranged on the base substrate, wherein the switching device is connected between the data line and the voltage compensation module so that the data line is electrically connected to the voltage compensation module when a voltage on the data line is lower than a preset low voltage or higher than a preset high voltage; wherein the switching device is constituted by at least one PN junction; and
further including a light blocking layer formed on the base substrate, wherein the light blocking layer is arranged directly below the PN junction.
2. The array substrate of claim 1 , wherein the voltage compensation module includes a high voltage terminal and a low voltage terminal, a voltage on the high voltage terminal is the preset high voltage, and a voltage on the low voltage terminal is the preset low voltage.
3. The array substrate of claim 2 , wherein the switching device includes a first PN junction and a second PN junction, a P terminal of the first PN junction is connected to the data line, and an N terminal of the first PN junction is connected to the high voltage terminal; and a P terminal of the second PN junction is connected to the low voltage terminal, and an N terminal of the second PN junction is connected to the data line.
4. The array substrate of claim 1 , wherein the voltage compensation module includes a high voltage terminal, and a voltage on the high voltage terminal is the preset high voltage; and the switching device is constituted by one PN junction, a P terminal of the PN junction is connected to the data line, and an N terminal of the PN junction is connected to the high voltage terminal.
5. The array substrate of claim 1 , wherein the voltage compensation module includes a low voltage terminal, and a voltage on the low voltage terminal is the preset low voltage; and the switching device is constituted by one PN junction, a P terminal of the PN junction is connected to the low voltage terminal, and an N terminal of the PN junction is connected to the data line.
6. The array substrate of claim 1 , wherein a P terminal and an N terminal of the PN junction are formed by performing P-type highly doping and N-type highly doping on two ends of polysilicon or monocrystalline silicon.
7. The array substrate of claim 6 , wherein there is an interval region between the P terminal and the N terminal of the PN junction, and P-type lightly doping is performed on the interval region.
8. The array substrate of claim 1 , further including an effective display region and a border region surrounding the effective display region, wherein the PN junction and the voltage compensation module are arranged in the border region.
9. The array substrate of claim 1 , wherein each pixel unit of the array substrate is provided with a thin film transistor therein, and the PN junction is formed during the procedure of forming the thin film transistor.
10. A manufacturing method of the array substrate of claim 1 , including steps:
forming the data line on the base substrate; and
forming at least one PN junction, which is connected to the data line and the voltage compensation module, on the base substrate.
11. The manufacturing method of the array substrate of claim 10 , wherein the step of forming the at least one PN junction includes:
forming a polysilicon or monocrystalline silicon layer on the base substrate; and
performing P-type highly doping and N-type highly doping on two ends of the polysilicon or monocrystalline silicon layer, respectively.
12. The manufacturing method of the array substrate of claim 10 , further including a step of forming a thin film transistor on the base substrate, wherein the PN junction is formed during the step of forming the thin film transistor.
13. The manufacturing method of the array substrate of claim 10 , further including a step of forming the light blocking layer on the base substrate prior to the step of forming the at least one PN junction.
14. A display panel, including an arrays substrate and an opposite substrate, wherein the array substrate is the array substrate of claim 1 .
15. A display device, including the display panel of claim 14 .
16. The array substrate of claim 2 , wherein a P terminal and an N terminal of the PN junction are formed by performing P-type highly doping and N-type highly doping on two ends of polysilicon or monocrystalline silicon.
17. The array substrate of claim 3 , wherein a P terminal and an N terminal of the PN junction are formed by performing P-type highly doping and N-type highly doping on two ends of polysilicon or monocrystalline silicon.
18. The array substrate of claim 4 , wherein a P terminal and an N terminal of the PN junction are formed by performing P-type highly doping and N-type highly doping on two ends of polysilicon or monocrystalline silicon.