Method for using post-processing methods for accelerating EUV lithography

1. A method for patterning a substrate, the method comprising:

receiving a substrate having a radiation-sensitive layer, the radiation-sensitive layer comprising a resist composition having material properties that provide lithographic resolution of less than 40 nanometers when exposed to extreme ultraviolet radiation lithography;

creating a patterned resist mask on the substrate by developing a pattern transferred into the radiation-sensitive layer via an extreme ultraviolet lithography process, the extreme ultraviolet lithography process includes exposure of less than 10 millijoules of extreme ultraviolet radiation per centimeter squared of the substrate, the extreme ultra violet radiation having wavelengths between 10 nanometers to 124 nanometers;

over-coating the patterned resist mask with an image reversal material such that the image reversal material fills and covers the patterned resist mask;

removing an upper portion of the image reversal material such that top surfaces of the patterned resist mask are exposed;

removing the patterned resist mask such that the image reversal material remains resulting in a patterned image reversal material mask; and

slimming a sidewall of the patterned image reversal material mask such that initial dimensions of the patterned image reversal material mask are reduced while a pattern shape of the patterned image reversal material mask is retained and residual resist material, embedded within exposed surfaces of the patterned image reversal material mask, is removed.

2. The method of claim 1 , wherein the radiation-sensitive layer includes additives that enable modifying solubility of the radiation-sensitive layer with less than 10 millijoules of extreme ultraviolet radiation per centimeter squared of substrate surface area.

3. The method of claim 2 , wherein the additives include a suspension of nanoparticles selected from the group consisting of hafnium oxide and zirconium oxide.

4. The method of claim 1 , wherein the patterned resist mask is characterized by an edge roughness value of less than 4 nanometers with a standard deviation of 3 nanometers or less, and wherein the resist mask is characterized by a critical dimension (CD) of less than 40 nanometers.

5. The method of claim 1 , wherein removing the upper portion of the image reversal material includes using a wet etching process.

6. The method of claim 5 , wherein using the wet etching process includes:

coating the image reversal material with an acid;

baking the acid such that the acid diffuses into the upper portion of the image reversal material and changes a solubility of the upper portion of the image reversal material; and

developing the image reversal material such that the upper portion of the image reversal material is removed.

7. The method of claim 1 , wherein etching the upper portion of the image reversal material includes using a dry etch process.

8. The method of claim 1 , wherein slimming the patterned image reversal material mask includes using a wet etching process.

9. The method of claim 8 , wherein using the wet etching process includes:

coating the patterned image reversal material mask with an acid;

baking the acid such that the acid diffuses into exposed surfaces of the patterned image reversal material mask and changes a solubility of the exposed surfaces of the patterned image reversal material mask; and

developing the patterned image reversal material mask such that the exposed surfaces of the patterned image reversal material mask are removed to a depth sufficient to remove residual resist material embedded with the exposed surfaces of the patterned image reversal material mask.

10. The method of claim 1 , further comprising:

transferring a pattern defined by the patterned image reversal material mask into an underlying layer via a dry etching process resulting in a patterned underlying layer; removing the patterned image reversal material mask; and

executing a sidewall image transfer process using the patterned underlying layer as a mandrel for the sidewall image transfer process.

11. The method of claim 10 , wherein executing the sidewall image transfer process includes:

applying a conformal film to the patterned underlying layer;

partially etching the conformal film such that a double pattern of the patterned

underlying layer is created with the conformal film;

removing the patterned underlying layer; and

transferring the double pattern to a mask layer underlying the conformal film.

12. A method for patterning a substrate, the method comprising:

receiving a substrate having a radiation-sensitive layer, the radiation-sensitive layer comprising a resist composition having material properties that provide lithographic resolution of less than 40 nanometers when exposed to extreme ultraviolet radiation lithography, the radiation-sensitive layer including additives that enable modifying solubility of the radiation-sensitive layer with less than 10 millijoules of extreme ultraviolet radiation per centimeter squared of substrate surface area, wherein the additives include a suspension of nanoparticles selected from a group consisting of hafnium oxide and zirconium oxide;

creating a patterned resist mask on the substrate by developing a pattern transferred into the radiation-sensitive layer via an extreme ultraviolet lithography process, the extreme ultraviolet lithography process includes exposure of less than 10 millijoules of extreme ultraviolet radiation per centimeter squared of the substrate, the extreme ultra violet radiation having wavelengths between 10 nanometers to 124 nanometers;

over-coating the patterned resist mask with an image reversal material such that the image reversal material fills and covers the patterned resist mask;

removing an upper portion of the image reversal material such that top surfaces of the patterned resist mask are exposed; and

removing the patterned resist mask such that the image reversal material remains resulting in a patterned image reversal material mask.

13. The method of claim 12 , wherein the patterned resist mask is characterized by an edge roughness value of less than 4 nanometers with a standard deviation of less than 3 nanometers, and wherein the patterned resist mask is characterized by a critical dimension (CD) of less than 40 nanometers.

14. The method of claim 12 , wherein removing the upper portion of the image reversal material includes using a wet etching process, the wet etching process including diffusing an acid into the upper portion of the image reversal material, the acid changing a solubility of the upper portion of the image reversal material.

15. The method of claim 12 , further comprising:

executing a sidewall image transfer process using the patterned image reversal material mask as a mandrel for the sidewall image transfer process; and

prior to executing the sidewall image transfer process, slimming the patterned image reversal material mask such that initial dimensions of the patterned image reversal material mask are reduced and residual resist material, embedded within exposed surfaces of the patterned image reversal material mask, is removed, wherein slimming the patterned image reversal material mask includes diffusing an acid into the exposed surfaces of the patterned image reversal material mask such that the diffused acid changes a solubility of the exposed surfaces of the patterned image reversal material mask.