Integrated shielding for wafer plating
A semiconductor substrate carrier for use during wet chemical processing may comprise a conductive flange to couple the carrier with processing equipment, a frame coupled with the conductive flange, where the frame is configured to hold a semiconductor substrate, and an integrated shield coupled with the frame. The integrated shield is configured to alter an electric field near at least a portion of a surface of the semiconductor substrate during the wet chemical processing.
1. A semiconductor substrate carrier in combination with a first semiconductor substrate and a second semiconductor substrate for continuous processing with low cost leadframe strip plating equipment and without semiconductor fabrication plant (fab) equipment 100-200 wafers per hour, comprising:
a conductive flange configured to couple the carrier with the low cost leadframe strip plating equipment to provide a temporary electrical connection between the continuous processing equipment, the first semiconductor substrate, and the second semiconductor substrate, wherein the conductive flange comprises a flexibility to elastically bend in an arc comprising a radius of 60 centimeters during the continuous processing;
a non-conductive frame coupled with the conductive flange, the frame comprising a first ring-shaped frame piece and a second ring-shaped frame piece positioned opposite the first ring-shaped frame piece, wherein the frame comprises an inside diameter;
the first semiconductor substrate disposed within the frame, wherein the inside diameter of the frame is smaller than a diameter of the first semiconductor substrate and the conductive flange is in electrical contact with an outer 2.5 mm edge of the first semiconductor substrate in a radial direction;
the second semiconductor substrate disposed back-to-back with the first semiconductor substrate within the frame, wherein the inside diameter of the frame is smaller than a diameter of the second semiconductor substrate and the conductive flange is in electrical contact with an outer 2.5 mm edge of the second semiconductor substrate in a radial direction;
a first integrated shield in direct contact with the first ring-shaped frame piece, the first semiconductor substrate disposed in a fixed position between the first ring-shaped piece and the second ring-shaped piece, wherein the first integrated shield is operative to alter an electric field near a portion of a surface of the first semiconductor substrate during wet chemical processing; and
a second integrated shield in direct contact with the second ring-shaped frame piece, the second semiconductor substrate disposed in a fixed position between the first ring-shaped piece and second ring-shaped piece, wherein the second integrated shield is operative to alter an electric field near at least a portion of a surface of the second semiconductor substrate during wet chemical processing.
2. The semiconductor substrate carrier of claim 1 , wherein the integrated shield is further configured to restrict flow of a fluid near at least a portion of the surface of the semiconductor substrate.
3. The semiconductor substrate carrier of claim 1 , wherein the integrated shield further comprises at least one coupling device configured to attach the integrated shield to the carrier.
4. The semiconductor substrate carrier of claim 3 , wherein the at least one coupling device comprises at least one screw.
5. The semiconductor substrate carrier of claim 3 , wherein the at least one coupling device is configured to attach the integrated shield to the frame.
6. The semiconductor substrate carrier of claim 1 , wherein the inner diameter of the frame is less than or equal to 5.0 mm smaller than the diameter of the semiconductor substrate.
7. The semiconductor substrate carrier of claim 1 , wherein the first integrated shield and the second integrated shield are configured to alter the electric field near an edge of the semiconductor substrate.
8. The semiconductor substrate carrier of claim 7 , wherein the first integrated shield and the second integrated shield each comprise a surface comprising one or more holes.
9. The semiconductor substrate carrier of claim 8 , wherein a density of the one or more holes is greater nearer to a center of the first semiconductor substrate and the second semiconductor substrate than nearer an edge of the first semiconductor substrate and the second semiconductor substrate.
10. The semiconductor substrate carrier of claim 1 , wherein each of the first integrated shield and the second integrated shield comprise a surface comprising a single cutout section comprising a cutout diameter smaller than the inside diameter of the frame.
11. The semiconductor substrate carrier of claim 10 , wherein the area of the cutout section is greater nearer a center of the first semiconductor substrate and the second semiconductor substrate than nearer an edge of the first semiconductor substrate and the second semiconductor substrate, respectively.
12. The semiconductor substrate carrier of claim 1 , wherein the integrated shield comprises a nonconductive material.
13. The semiconductor substrate carrier of claim 1 , wherein the frame is made from a nonconductive material.
14. The semiconductor substrate carrier of claim 1 , wherein
a semiconductor wafer is disposed between the first ring-shaped frame piece and the second ring-shaped frame piece.
15. The semiconductor substrate carrier of claim 14 , further comprising one or more magnets configured to attach the first ring-shaped frame piece to the second ring-shaped frame piece.
16. A method of using the semiconductor substrate carrier of claim 1 , further comprising the throughput of 100-200 wafers per hour with continuous processing with a single piece of low cost leadframe strip plating equipment.
17. A system comprising an apparatus in combination with a semiconductor substrate for continuous processing with low cost leadframe strip plating equipment and without semiconductor fabrication plant (fab) equipment 100-200 wafers per hour, wherein the apparatus comprises:
means for holding the semiconductor substrate;
means for coupling the means for holding with wet chemical processing equipment; means for altering an electric field near a surface of the semiconductor substrate during wet chemical processing; and
first ring-shaped means and second ring-shaped means opposite the first ring shape means for maintaining a position of the means for altering the electric field relative to the semiconductor substrate at a fixed position, the first ring-shaped means directly contacting the second ring-shaped means and directly contacting and integrated with the means for altering an electric field such that the semiconductor substrate is disposed in a fixed position between the first ring-shaped means and the second ring-shaped means.
18. The apparatus of claim 17 , wherein the ring-shaped means for maintaining the position of the means for altering the electric field further comprises means for attaching a means for restricting flow with the means for holding the semiconductor substrate.
19. The apparatus of claim 18 , wherein the means for restricting flow of a fluid comprises means for restricting flow of the fluid near a surface of a second semiconductor substrate.
20. A system comprising a semiconductor substrate carrier in combination with a semiconductor substrate for continuous processing with low cost lead frame strip plating equipment and without semiconductor fabrication plant (fab) equipment 100-200 wafers per hour, wherein the semiconductor substrate carrier comprises:
a conductive flange configured to couple the carrier with the low cost leadframe strip plating equipment to provide a temporary electrical connection between the plating equipment and the semiconductor substrate:
a frame that comprises a first frame piece and a second frame piece oriented parallel to the first frame piece;
the semiconductor substrate disposed within the frame at a fixed position between the first frame piece and the second frame piece, wherein the conductive flange is adapted to be in electrical contact with an outer edge of the semiconductor substrate; and an integrated shield in direct contact with to the frame.
21. The apparatus of claim 20 , wherein the conductive flange forms part of a plating electrical circuit with the semiconductor substrate.
22. The apparatus of claim 20 , wherein the integrated shield is operative to alter an electric field near at least a portion of a surface of the semiconductor substrate during wet chemical processing.
23. The apparatus of claim 22 , wherein the integrated shield restricts flow of a fluid near at least a portion of the surface of the semiconductor substrate.
24. The apparatus of claim 20 , wherein the integrated shield further comprises at least one coupling device configured to attach the integrated shield to the carrier.
25. The apparatus of claim 20 , wherein the first frame piece is coupled to the second frame piece with magnets.
26. The apparatus of claim 20 , wherein the frame is configured to hold a first semiconductor substrate and a second semiconductor substrate.
27. The apparatus of claim 20 , wherein the integrated shield comprises a surface comprising a cutout section that is greater nearer a center of the semiconductor substrate than nearer an edge of the semiconductor substrate.