MIM capacitor formation in RMG module
A method is provided for forming a metal-insulator-metal capacitor in a replacement metal gate module. The method includes providing a gate cap formed on a gate. The method further includes removing a portion of the gate cap and forming a recess in the gate. A remaining portion of the gate forms a first electrode of the capacitor. The method also includes depositing a dielectric on remaining portions of the gate cap and the remaining portion of the gate. The method additionally includes depositing a conductive material on the dielectric. The method further includes removing a portion of the conductive material and portions of the dielectric to expose a remaining portion of the conductive material and a remaining portion of the dielectric. The remaining portion of the conductive material forms a second electrode of the capacitor. The remaining portion of the dielectric forms an insulator of the capacitor.
1. A method for forming a metal-insulator-metal capacitor in a replacement metal gate module, comprising:
providing a gate cap formed on a gate;
forming a plurality of recesses by forming a plurality of voids in the gate cap and forming a plurality of gate recesses in the gate under the plurality of voids, a remaining portion of the gate forming a first electrode of the capacitor;
depositing a dielectric on remaining portions of the gate cap and the remaining portion of the gate;
depositing a conductive material on the dielectric; and
removing a plurality of portions of the dielectric and a remaining portion of the conductive material to expose a plurality of remaining portions of the dielectric and a plurality of remaining portions of the conductive material, the plurality of remaining portions of the dielectric forming at least a portion of an insulator of the capacitor and the plurality of remaining portions of the conductive material forming a second electrode of the capacitor.
2. The method of claim 1 , further comprising forming respective contacts on the first and second electrodes.
3. The method of claim 1 , wherein removing the plurality of portions of the dielectric exposes at least some remaining portions of the gate cap, the at least some remaining portions of the gate cap also forming the insulator of the capacitor.
4. The method of claim 1 , wherein depositing the conductive material on the dielectric comprises filling portions of the plurality of recesses with the conductive material.
5. The method of claim 1 , wherein at least a portion of the capacitor is formed within a gate of a field effects transistor.
6. The method of claim 1 , wherein at least a portion of the capacitor is formed on a region of a field effects transistor, the region being without any semiconductor present.
7. The method of claim 1 , wherein said forming step uses a gate metal of the field effect transistor as the first electrode of the capacitor.
8. The method of claim 1 , wherein the gate cap is a high K dielectric.
9. The method of claim 1 , wherein the conductive material is titanium nitride/tungsten.