Semiconductor device, manufacturing method thereof, module, and electronic device
A semiconductor device includes a transistor and a capacitor. The transistor includes a first conductive film; a first insulating film including a film containing hydrogen; a second insulating film including an oxide insulating film; an oxide semiconductor film including a first region and a pair of second regions; a pair of electrodes; a gate insulating film; and a second conductive film. The capacitor includes a lower electrode, an inter-electrode insulating film, and an upper electrode. The lower electrode contains the same material as the first conductive film. The inter-electrode insulating film includes a third insulating film containing the same material as the first insulating film and a fourth insulating film containing the same material as the gate insulating film. The upper electrode contains the same material as the second conductive film. A fifth insulating film containing hydrogen is provided over the transistor.
1. A semiconductor device comprising:
a transistor comprising:
a first conductive film;
a first insulating film over the first conductive film;
a second insulating film over the first insulating film;
an oxide semiconductor film over the second insulating film;
a pair of electrodes in contact with the oxide semiconductor film;
a third insulating film over the oxide semiconductor film; and
a second conductive film overlapping with the oxide semiconductor film with the third insulating film therebetween,
wherein the first insulating film comprises a film containing hydrogen,
wherein the second insulating film comprises an oxide insulating film,
wherein an end portion of the third insulating film is positioned on the outer side than an end portion of the second conductive film, and
wherein the end portion of the third insulating film is curved, and
a capacitor comprising:
a third conductive film;
the first insulating film over the third conductive film;
a fourth insulating film over the first insulating film; and
a fourth conductive film over the fourth insulating film,
a fifth insulating film over and in contact with a top surface of the second conductive film and a top surface of the fourth conductive film,
wherein the first conductive film and the third conductive film are provided on the same surface,
wherein an end portion of the fourth insulating film is positioned on the outer side than an end portion of the fourth conductive film, and
wherein the end portion of the fourth insulating film is curved.
2. The semiconductor device according to claim 1 , wherein the film containing hydrogen comprises a silicon nitride film.
3. The semiconductor device according to claim 1 , wherein the oxide insulating film comprises a region which contains oxygen in excess of a stoichiometric composition.
4. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises:
a first region overlapping with the first conductive film; and
a pair of second regions between which the first region is interposed,
wherein a concentration of an impurity element in the first region is different from concentrations of the impurity element in the second regions.
5. The semiconductor device according to claim 4 , wherein each of the concentrations of the impurity element in the second regions is higher than the concentration of the impurity element in the first region.
6. The semiconductor device according to claim 4 , wherein the impurity element comprises any one of hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon, phosphorus, and chlorine.
7. The semiconductor device according to claim 4 , wherein the first region comprises a region thicker than the second regions.
8. A module comprising:
the semiconductor device according to claim 1 ; and
a printed board.
9. An electronic device comprising:
at least one of the semiconductor device according to claim 1 ; and
at least one of a speaker, an operation key, and a battery.
10. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first conductive film and a second conductive film using one conductive film;
forming a first insulating film over the first conductive film and the second conductive film;
wherein the first insulating film comprises a film containing hydrogen,
forming a second insulating film over the first insulating film;
forming a third conductive film over the second insulating film;
adding oxygen to the second insulating film through the third conductive film;
removing the third conductive film;
processing a region of the second insulating film overlapping with the second conductive to expose the first insulating film;
forming an oxide semiconductor film over the second insulating film;
forming a third insulating film over the oxide semiconductor film, the first insulating film, and the second insulating film;
forming a fourth conductive film over the third insulating film;
processing the fourth conductive film to form a fifth conductive film and a sixth conductive film;
processing the third insulating film to form a fourth insulating film and a fifth insulating film; and
forming six insulating film over and in contact with a top surface of the fifth conductive film and a top surface of the sixth conductive film,
wherein an end portion of the fourth insulating film is positioned on the outer side than an end portion of the fifth conductive film,
wherein an end portion of the fifth insulating film is positioned on the outer side than an end portion of the sixth conductive film, and
wherein the end portion of the fourth insulating film and the end portion of the fifth insulating film are curved.
11. The method for manufacturing a semiconductor device, according to claim 10 , further comprising the step of adding an impurity to the oxide semiconductor film with use of the fifth conductive film as a mask to form a first region overlapping with the fifth conductive film and a pair of second regions between which the first region is interposed.