Tin perovskite/silicon thin-film tandem solar cell
A method of making a non-toxic perovskite/inorganic thin-film tandem solar cell including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer; and depositing perovskite elements on the metal-inorganic film, thus forming a perovskite layer based on a metal from the metal-inorganic film, incorporating the metal into the perovskite layer.
1. A method of making a non-toxic perovskite/inorganic thin-film tandem solar cell comprising the steps of:
depositing a textured oxide buffer layer on substrate;
depositing a metal-inorganic film from a eutectic alloy on said buffer layer; and
depositing perovskite elements on said metal-inorganic film, forming a perovskite layer based on a metal from said metal-inorganic film, incorporating said metal into said perovskite layer.
2. The method of claim 1 , wherein the buffer layer is textured.
3. The method of claim 1 , wherein the inorganic film is textured.
4. The method of claim 1 , wherein the metal is Sn (tin).
5. The method of claim 1 , wherein the inorganic film is Si (silicon).
6. The method of claim 1 , wherein the perovskite layer is tin based.
7. The method of claim 1 , wherein the perovskite layer is textured.
8. The method of claim 1 , wherein said perovskite layer is MASnI.
9. The method of claim 1 , further comprising forming a silicon film and using said silicon film as a tunnel junction.
10. The method of claim 1 , wherein improving the connection between the two semiconductor materials with the texture.
11. The method of claim 1 , wherein said metal film serves as an ohmic contact between the metal-inorganic layer and the perovskite layer in the tandem solar cell.
12. The method of claim 1 , wherein said substrate is glass.
13. The method of claim 1 , wherein said substrate is organic and flexible.
14. The method of claim 1 , wherein said substrate is a metal tape.
15. The method of claim 1 , wherein the thickness of said inorganic film is less than 1 μm.
16. The method of claim 1 , wherein the thickness of said inorganic film is greater than 1 μm.
17. The method of claim 1 , wherein the thickness of said perovskite layer is less than 1 μm.
18. The method of claim 1 , wherein the thickness of said perovskite layer is greater than 1 μm.
19. The method of claim 5 , wherein the silicon film serves as a scaffold and a polymer film underneath the silicon film serves as a conducting layer and a third semiconductor material for a triple junction solar cell.