Display device having an oxide semiconductor transistor
An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
1. A display device comprising:
a first scan line and a second scan line;
a first insulating layer over the first scan line and the second scan line, the first insulating layer having a stacked structure including a silicon nitride film and a silicon oxide film;
a semiconductor layer over the first insulating layer;
a signal line and a conductive film over the semiconductor layer;
a second insulating layer over the signal line and the conductive film; and
a pixel electrode over the second insulating layer,
wherein the signal line intersects the first scan line and the second scan line at a first intersection and a second intersection, respectively,
wherein the signal line comprises a first convex and a second convex at the first intersection and the second intersection, respectively,
wherein the signal line is substantially entirely flat in a region between the first convex and the second convex,
wherein the semiconductor layer is located at the first intersection, wherein the signal line is entirely in contact with the silicon oxide film in the region, and
wherein the pixel electrode is electrically connected to the conductive film through a contact hole located in the second insulating layer.
2. The display device according to claim 1 ,
wherein the second insulating layer is an inorganic insulating film.
3. The display device according to claim 1 ,
wherein the signal line and the conductive film each comprise:
a titanium-containing layer;
an aluminum-containing layer over the titanium-containing layer; and
a titanium-containing layer over the aluminum-containing layer.
4. The display device according to claim 1 ,
wherein the first scan line and the second scan line each comprise:
a tantalum-containing layer; and
a tungsten-containing layer over the tantalum-containing layer.
5. The display device according to claim 1 ,
wherein the semiconductor layer comprises an oxide semiconductor.
6. The display device according to claim 1 , wherein a pixel comprising the pixel electrode comprises no capacitor.
7. A display device comprising:
a first scan line and a second scan line;
a first insulating layer over the first scan line and the second scan line, the first insulating layer having a stacked structure including a silicon nitride film and a silicon oxide film;
a semiconductor layer over the first insulating layer;
a signal line and a conductive film over the semiconductor layer;
a second insulating layer over the signal line and the conductive film; and
a pixel electrode over the second insulating layer,
wherein the signal line intersects the first scan line and the second scan line at a first intersection and a second intersection, respectively,
wherein the signal line comprises a first convex and a second convex at the first intersection and the second intersection, respectively,
wherein the signal line is substantially entirely flat in a region between the first convex and the second convex,
wherein the semiconductor layer is located at the first intersection,
wherein a transistor is structured at least by a part of the first scan line, a part of the first insulating layer, and a part of the semiconductor layer,
wherein the transistor is configured to control an electrical connection between the signal line and the conductive film,
wherein the signal line is entirely in contact with the silicon oxide film in the region, and
wherein the pixel electrode is electrically connected to the conductive film through a contact hole located in the second insulating layer.
8. The display device according to claim 7 ,
wherein the second insulating layer is an inorganic insulating film.
9. The display device according to claim 7 ,
wherein the signal line and the conductive film each comprise:
a titanium-containing layer;
an aluminum-containing layer over the titanium-containing layer; and
a titanium-containing layer over the aluminum-containing layer.
10. The display device according to claim 7 ,
wherein the first scan line and the second scan line each comprise:
a tantalum-containing layer; and
a tungsten-containing layer over the tantalum-containing layer.
11. The display device according to claim 7 ,
wherein the semiconductor layer comprises an oxide semiconductor.
12. The display device according to claim 7 , wherein a pixel comprising the pixel electrode comprises no capacitor.