IP Library › Granted Patent US 9,659,658
Granted Patent B2
US 9,659,658 · App. 14/596,677 · Granted May 23, 2017

Nonvolatile memory device, storage device including the nonvolatile memory device, and operating method of the storage device

Inventor: Dae han Kim (Seoul, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G11C16/10G11C16/0483G11C16/20G11C16/22G11C16/3459
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Quick Facts
Patent No.
US 9,659,658
App. No.
14/596,677
Granted
May 23, 2017
Kind
B2
Abstract

A storage device includes a nonvolatile memory device and a memory controller is provided. The nonvolatile memory device includes a plurality of blocks. The memory controller is configured to detect, upon receiving a power-on signal, a partial block among the plurality of blocks. The partial block includes a first page incompletely programmed due to sudden power-off occurred to the storage device. The memory controller determines whether or not to perform a dummy program operation on the partial block, and programs a second page of the partial bock with dummy data. The first page is different from the second page.

Claims (52)

1. A storage device comprising:

a nonvolatile memory device including a plurality of blocks; and

a memory controller configured to:

detect, upon receiving a power-on signal, a partial block among the plurality of blocks, wherein the partial block includes a first page incompletely programmed due to sudden power-off occurred to the storage device;

determine whether or not to perform a dummy program operation on the partial block; and

program a second page of the partial block with dummy data,

wherein the first page is different from the second page, and

wherein the dummy data is data indicating a program state having a highest threshold voltage range among a plurality of program states.

2. The storage device of claim 1 ,

wherein the memory controller comprises:

a partial block program determinator configured to perform the detecting of the partial block and the determining of whether or not to perform the dummy program operation on the partial block; and

a dummy data generator configured to perform the programming of the second page of the partial block with the dummy data according to a result of the determining of whether or not to perform the dummy program operation.

3. The storage device of claim 2 ,

wherein the memory controller is further configured to perform a copyback operation based on a detection result of detecting of the partial block,

wherein the copyback operation moves valid data of the partial block to another block of the plurality of blocks.

4. The storage device of claim 1 ,

wherein the second page is at least one clean page disposed above the first page or a dummy page disposed above the first page.

5. An operating method of a storage device including a nonvolatile memory device including a plurality of blocks and a memory controller configured to control the nonvolatile memory device, the operating method comprising:

detecting a partial block, wherein the partial block includes a first page incompletely programmed due to sudden power-off occurred to the storage device; and

performing a dummy program operation on a second page of the partial block by using dummy data, wherein the first page is different from the second page,

wherein the dummy data is data indicating a program state having a highest threshold voltage range.

6. The operating method of claim 5 , further comprising:

performing a copyback operation to move valid data of the partial block to one of the plurality of blocks after performing the dummy program operation on the partial block, wherein the one of the plurality of blocks is different from the partial block.

7. The operating method of claim 6 , further comprising:

erasing the partial block after performing the copyback operation.

8. The operating method of claim 5 ,

wherein the second page includes at least one clean page.

9. The operating method of claim 8 ,

wherein the second page includes at least one dummy page.

10. The operating method of claim 9 ,

wherein the dummy program operation includes performing a program operation on the at least one clean page and the at least one dummy page at substantially the same time.

11. The operating method of claim 6 , further comprising:

determining whether or not to perform the dummy program operation on the partial block before the performing of the dummy program operation.

12. The operating method of claim 11 ,

wherein the performing of the dummy program operation is made according to a determination result of the determining of whether or not to perform the dummy program operation.

13. The operating method of claim 11 ,

wherein the determination is made according to power supply information of the partial block.

14. The operating method of claim 12 ,

wherein the performing of the copyback operation includes performing a program verify operation on the one of the plurality of blocks, and wherein the determination is made according to a result of the program verify operation.

15. An operating method of a storage device comprising:

detecting whether a nonvolatile memory includes a partial block, wherein the partial block includes a first page incompletely programmed due to sudden power-off occurred to the storage device;

performing a dummy program operation on a second page of the partial block using dummy data, wherein the second page is disposed between the first page and a string selection transistor of the nonvolatile memory;

performing a copyback operation to move valid data of the partial block to another block different from the partial block; and

erasing the partial block after performing the copyback operation,

wherein the dummy data represents a threshold voltage within a highest threshold voltage range.

16. The operating method of claim 15 ,

wherein the detecting of whether the nonvolatile memory includes the partial block is performed upon receiving a power-on signal.

17. The operating method of claim 15 ,

wherein the second page includes at least one clean page or at least one dummy page.

18. The operating method of claim 17 , further comprising:

storing information of the sudden power-off,

wherein the detecting of whether the nonvolatile memory includes the partial block is determined based on the information of the sudden power-off.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 14, 2015
From: KIM, DAE HAN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 034708/0810 →
Priority Claims (1)
KR 10-2014-0057311 · May 13, 2014 · national
Continuity (1)
Related Publication 20150332770A1 · Nov 19, 2015