Method of making a FinFET device
The present disclosure provides many different embodiments of fabricating a FinFET device that provide one or more improvements over the prior art. In one embodiment, a method of fabricating a FinFET includes providing a semiconductor substrate and a plurality of dummy fins and active fins on the semiconductor substrate. A predetermined group of dummy fins is removed.
1. A device comprising:
a first fin structure disposed over a substrate and having a first height;
a second fin structure disposed over the substrate and having a second height that is different from the first height; and
an isolation structure extending from the first fin structure to the second fin structure and at least partially covering a top surface of the second fin structure, wherein the isolation structure extends continuously from the substrate to at least the top surface of the second fin structure, the top surface of the second fin structure facing away from the substrate.
2. The device of claim 1 , wherein the isolation structure completely covers the top surface of the second fin structure.
3. The device of claim 1 , wherein the second fin structure is completely embedded within the isolation structure.
4. The device of claim 1 , wherein the isolation structure includes a portion positioned directly over the second fin structure.
5. The device of claim 1 , wherein the first height is greater than the second height.
6. The device of claim 1 , wherein the second fin structure is a dummy fin structure having no functionality in the device.
7. The device of claim 1 , further comprising a third fin structure disposed over the substrate and having a third height that is different from the first height.
8. A device comprising:
a first fin structure disposed over a substrate and having a first height;
a second fin structure disposed over the substrate and having a second height that is different from the first height;
a shallow trench isolation structure disposed between the first and second fin structures and at least partially covering a top surface of the second fin structure, the top surface of the second fin structure facing away from the substrate; and
an interlayer dielectric layer disposed over the first and second fin structures.
9. The device of claim 8 , further comprising a raised source/drain feature disposed over a physically contacting the first fin structure.
10. The device of claim 9 , wherein the raised source/drain feature physically contacts the shallow trench isolation structure.
11. The device of claim 8 , further comprising a gate structure disposed over the first and second fin structures.
12. The device of claim 8 , further comprising a third fin structure disposed over the substrate and having a third height that is different from the first height.
13. The device of claim 12 , wherein the interlayer dielectric layer physically contacts the third fin structure.
14. The device of claim 8 , wherein the shallow trench isolation structure extends from the first fin structure to the second fin structure.
15. A device comprising:
a first fin structure extending from a semiconductor substrate and having a first height, the first fin structure formed from the semiconductor substrate;
a second fin structure extending from a semiconductor substrate and having a second height that is different from the first height, the second fin structure formed from the semiconductor substrate; and
a shallow trench isolation structure disposed between the first and second fin structures and at least partially covering a top surface of the second fin structure, the top surface of the second fin structure facing away from the semiconductor substrate.
16. The device of claim 15 , wherein the shallow trench isolation structure extends continuously from the semiconductor substrate to the top surface of the second fin structure.
17. The device of claim 15 , wherein the top surface of the second fin structure extends between opposing sidewall surfaces of the second fin structure, and
wherein the shallow trench isolation structure physically contacts the top surface and opposing sidewall surfaces of the second fin structure.
18. The device of claim 15 , wherein the shallow trench isolation structure completely covers the top surface of the second fin structure.
19. The device of claim 15 , further comprising a third fin structure adjacent the first fin structure, and wherein the shallow trench isolation structure extends continuously from the second fin structure to the third fin structure such that the shallow trench isolation structure physically contacts a top surface of the third fin structure and physically contacts opposing sidewalls of the third fin structure, wherein the top surface of the third fin structure extends between the opposing sidewalls of the third fin structure.
20. The device of claim 8 , wherein the first fin structure is formed from the semiconductor substrate, and
wherein the second fin structure is formed from the semiconductor substrate.