Power quad flat no-lead (PQFN) package in a single shunt inverter circuit
A power quad flat no-lead (PQFN) package includes a driver integrated circuit (IC) situated on a leadframe. The PQFN package further includes low-side U-phase, low-side V-phase, and low-side W-phase power switches situated on the leadframe. A logic ground of the leadframe is coupled to a support logic circuit of the driver IC. A power stage ground of the leadframe is coupled to sources of the low-side U-phase, low-side V-phase, and low-side W-phase power switches. The power stage ground can further be coupled to gate drivers of the driver IC.
1. A power quad flat no-lead (PQFN) package comprising:
a driver integrated circuit (IC) situated on a leadframe;
U-phase, V-phase, and W-phase power switches situated on said leadframe;
a logic ground of said leadframe coupled to an overcurrent protection comparator within said driver IC;
a low-voltage level shifter; and
a power stage ground of said lead frame coupled to sources of said U-phase, V-phase, and W-phase power switches, and further coupled to gate drivers within said driver IC that in turn are coupled to the low-voltage level shifter that is configured to compensate for a voltage differential between said logic ground and said power stage ground.
2. The PQFN package of claim 1 , comprising at least one wirebond connecting said power stage ground of said lead frame to said source of said W-phase power switch.
3. The PQFN package of claim 1 , comprising at least one wirebond connecting said source of said W-phase power switch to said source of said V-phase power switch.
4. The PQFN package of claim 1 , comprising at least one wirebond connecting said source of said V-phase power switch to said source of said U-phase power switch.
5. The PQFN package of claim 1 , comprising at least one wirebond connecting a power stage ground terminal of said PQFN package to said source of said W-phase power switch.
6. The PQFN package of claim 1 , comprising at least one wirebond connecting a logic ground terminal of said PQFN package to said driver IC.
7. The PQFN package of claim 1 , comprising at least one wirebond connecting said source of said U-phase power switch to said gate drivers within said driver IC through said leadframe.
8. The PQFN package of claim 1 , wherein said U-phase, V-phase, and W-phase power switches are situated on respective die pads of said leadframe.
9. The PQFN package of claim 1 , wherein said U-phase, V-phase, and W-phase power switches are coupled respectively to another U-phase, another V-phase, and another W-phase power switches through said leadframe.
10. The PQFN package of claim 1 , wherein said U-phase, V-phase, and W-phase power switches comprise fast-reverse epitaxial diode field effect transistors (FREDFETs).
11. The PQFN package of claim 1 , wherein said U-phase, V-phase, and W-phase power switches comprise insulated-gate bipolar transistors (IGBTs).
12. The PQFN package of claim 1 , wherein said U-phase, V-phase, and W-phase power switches comprise group III-V transistors.
13. The PQFN package of claim 1 , wherein said PQFN package has a footprint of greater than 12 mm by 12 mm.
14. The PQFN package of claim 1 , wherein said PQFN package has a footprint of less than 12 mm by 12 mm.