Semiconductor device and method for producing same having multilayer wiring structure with contact hole having hydrophobic film formed on side surface of the contact hole
A method of producing a semiconductor device includes forming an insulating film on a substrate on which a semiconductor layer is formed; removing a part of the insulating film by etching to form an opening in the insulating film; supplying steam with a temperature greater than or equal to 200° C. and less than or equal to 600° C. to the opening formed in the insulating film; after supplying the steam, applying a solution including a silicon compound to a side surface or the insulating film defining the opening; and forming a hydrophobic film on the side surface of the insulating film defining the opening by polymerizing the silicon compound.
1. A semiconductor device, comprising:
a semiconductor layer formed on a substrate;
an insulating film formed on the substrate and the semiconductor layer;
an opening formed in the insulating film; and
a hydrophobic film formed on a side surface of the insulating film defining the opening, wherein
a contact angle of water on the hydrophobic film is greater than or equal to 90°; and
the hydrophobic film includes a silicon compound that is indicated by a structural formula below, where each of R1 and R2 is one of a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted cycloalkyl group, and a substituted or unsubstituted aryl group; and “n” is an integer greater than or equal to 2:
2. The semiconductor device as claimed in claim 1 , further comprising:
a through electrode formed in the opening,
wherein the insulating film includes a plurality of layers of insulating films.
3. The semiconductor device as claimed in claim 1 , wherein the opening implements a scribe line.
4. The semiconductor device as claimed in claim 1 , wherein the insulating film includes porous silica.