Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device is formed in such a manner that a first insulator, a first oxide semiconductor, and a first conductor are formed; the first conductor is processed to form a second conductor; the first oxide semiconductor is processed to form a second oxide semiconductor; a second insulator is formed over the second conductor; a third insulator is formed over the second insulator; a fourth insulator is formed over the third insulator; the fourth insulator, the third insulator, the second insulator, and the second conductor are selectively processed to partly expose the second oxide semiconductor; a fifth insulator is formed over the second oxide semiconductor and the fourth insulator; and a third conductor is formed over the fifth insulator and then chemical mechanical polishing treatment is performed to expose a top surface of the fourth insulator.
1. A method for manufacturing a semiconductor device comprising the steps of:
forming a first insulator;
forming a first semiconductor over the first insulator;
forming a first conductor over the first semiconductor;
patterning the first conductor to form a second conductor;
patterning the first semiconductor to form a second semiconductor;
forming a second insulator over the second conductor;
forming a third insulator over the second insulator;
forming a fourth insulator over the third insulator;
removing a part of the fourth insulator to expose the third insulator;
removing a part of the third insulator to expose the second insulator;
removing a part of the second insulator to expose the second conductor;
removing a part of the second conductor to expose the second semiconductor;
forming a fifth insulator over the second semiconductor and the fourth insulator;
forming a third conductor over the fifth insulator; and
performing chemical mechanical polishing treatment to expose a top surface of the fourth insulator.
2. The method for manufacturing a semiconductor device according to claim 1 , further comprising the steps of:
forming a third oxide semiconductor over the fifth insulator before the step of forming the third conductor.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the first semiconductor includes two to four stacked oxide semiconductors.
4. The method for manufacturing a semiconductor device according claim 1 ,
wherein a surface of the second insulator is planarized by chemical mechanical polishing treatment.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein the third conductor includes at least two stacked conductors.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein the third conductor includes copper.
7. The method for manufacturing a semiconductor device according claim 1 ,
wherein the first semiconductor is a first oxide semiconductor, and
wherein the second semiconductor is a second oxide semiconductor.
8. A method for manufacturing a semiconductor device comprising the steps of:
forming a first insulator;
forming a first semiconductor over the first insulator;
patterning the first semiconductor to form a second semiconductor;
forming a first conductor over the second semiconductor;
patterning the first conductor to form a second conductor;
forming a second insulator over the second conductor;
forming a third insulator over the second insulator;
forming a fourth insulator over the third insulator;
removing a part of the fourth insulator to expose the third insulator;
removing a part of the third insulator to expose the second insulator;
removing a part of the second insulator to expose the second conductor;
removing a part of the second conductor to expose the second semiconductor;
forming a fifth insulator over the second semiconductor and the fourth insulator;
forming a third conductor over the fifth insulator; and
performing chemical mechanical polishing treatment to expose a top surface of the fourth insulator.
9. The method for manufacturing a semiconductor device according to claim 8 , further comprising the steps of:
forming a third oxide semiconductor over the fifth insulator before the step of forming the third conductor.
10. The method for manufacturing a semiconductor device according to claim 8 , wherein the first semiconductor includes two to four stacked oxide semiconductors.
11. The method for manufacturing a semiconductor device according claim 8 , wherein a surface of the second insulator is planarized by chemical mechanical polishing treatment.
12. The method for manufacturing a semiconductor device according to claim 8 , wherein the third conductor includes at least two stacked conductors.
13. The method for manufacturing a semiconductor device according to claim 8 , wherein the third conductor includes copper.
14. The method for manufacturing a semiconductor device according to claim 8 ,
wherein the first semiconductor is a first oxide semiconductor, and
wherein the second semiconductor is a second oxide semiconductor.
15. A method for manufacturing a semiconductor device comprising the steps of:
forming a first insulator;
forming a first semiconductor over the first insulator;
forming a first conductor over the first semiconductor;
patterning the first conductor to form a second conductor;
patterning the first semiconductor to form a second semiconductor;
forming a second insulator over the second conductor;
forming a third insulator over the second insulator;
removing a part of the third insulator to expose the second insulator;
removing a part of the second insulator to expose the second conductor;
removing a part of the second conductor to expose the second semiconductor;
forming a sacrifice layer over the second semiconductor and the third insulator;
performing chemical mechanical polishing treatment to expose a top surface of the third insulator;
forming a fourth insulator over the third insulator and the sacrifice layer; removing a part of the fourth insulator to expose a top surface of the sacrifice layer;
removing the sacrifice layer to partly expose the second semiconductor;
forming a fifth insulator over the second semiconductor and the fourth insulator;
forming a third conductor over the fifth insulator; and
performing chemical mechanical polishing treatment to expose a top surface of the fourth insulator.
16. The method for manufacturing a semiconductor device according to claim 15 , further comprising the steps of:
forming a third oxide semiconductor over the fifth insulator before the steps of forming the third conductor.
17. The method for manufacturing a semiconductor device according to claim 15 , wherein the first semiconductor includes two to four stacked oxide semiconductors.
18. The method for manufacturing a semiconductor device according claim 15 ,
wherein a surface of the second insulator is planarized by chemical mechanical polishing treatment.
19. The method for manufacturing a semiconductor device according to claim 15 , wherein the third conductor includes at least two stacked conductors.
20. The method for manufacturing a semiconductor device according to claim 15 , wherein the third conductor includes copper.
21. A semiconductor device comprising:
a first insulator over a substrate;
a first semiconductor over the first insulator;
a second semiconductor over the first semiconductor;
a first conductor and a second conductor over the second semiconductor;
a second insulator over the first insulator, the first conductor, and the second conductor;
a third insulator over the second insulator;
a fourth insulator over the third insulator;
a third semiconductor over the second semiconductor;
a fifth insulator over the third semiconductor; and
a third conductor over the fifth insulator,
wherein an area of a top surface of the third conductor is larger than an area of a bottom surface of the third conductor, and
wherein a relative dielectric constant of the third insulator is higher than a relative dielectric constant of the second insulator.
22. The semiconductor device according to claim 21 , wherein the third conductor includes at least two stacked conductors.
23. The semiconductor device according to claim 21 , wherein the third conductor includes copper.
24. The method for manufacturing a semiconductor device according to claim 15 ,
wherein the first semiconductor is a first oxide semiconductor, and
wherein the second semiconductor is a second oxide semiconductor.