Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
View Patent ↗A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×10 10 dyn/cm 2 to 1×10 10 dyn/cm 2 . By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.
1. A display device comprising:
one island semiconductor layer over a substrate, the one island semiconductor layer comprising a first channel forming region and a second channel forming region;
a first gate electrode adjacent to the first channel forming region with a gate insulating layer interposed therebetween;
a second gate electrode adjacent to the second channel forming region with the gate insulating layer interposed therebetween;
a first insulating layer over the first gate electrode and the second gate electrode;
a first wiring over the first insulating layer; and
a second wiring over the first insulating layer,
wherein the first wiring overlaps with the first gate electrode,
wherein the second wiring overlaps with the second gate electrode,
wherein each of the first gate electrode and the second gate electrode includes inert element, and
wherein an amount of sodium contained within the first gate electrode and the second gate electrode is equal to or less than 0.3 ppm.
2. The display device according to claim 1 , wherein the display device further comprises a second insulating layer over the first insulating layer.
3. The display device according to claim 1 , wherein each of the first gate electrode and the second gate electrode is over the gate insulating layer.
4. The display device according to claim 1 , wherein the display device further comprises a pixel electrode over the first wiring.
5. The display device according to claim 1 , wherein one of the first wiring or the second wiring is a source line.
6. The display device according to claim 1 , wherein the one island semiconductor layer comprises crystalline silicon.
7. The display device according to claim 1 , wherein each of the first gate electrode and the second gate electrode comprises tungsten.
8. A display device comprising:
one island semiconductor layer over a substrate, the one island semiconductor layer comprising a first channel forming region and a second channel forming region;
a first gate electrode adjacent to the first channel forming region with a gate insulating layer interposed therebetween;
a second gate electrode adjacent to the second channel forming region with the gate insulating layer interposed therebetween;
a first insulating layer over the first gate electrode and the second gate electrode;
a first wiring over the first insulating layer; and
a second wiring over the first insulating layer,
wherein the first wiring overlaps with the first gate electrode,
wherein the second wiring overlaps with the second gate electrode,
wherein each of the first gate electrode and the second gate electrode comprises a first layer and a second layer,
wherein each of the first gate electrode and the second gate electrode includes inert element, and
wherein an amount of sodium contained within the first gate electrode and the second gate electrode is equal to or less than 0.3 ppm.
9. The display device according to claim 8 , wherein the display device further comprises a second insulating layer over the first insulating layer.
10. The display device according to claim 8 , wherein each of the first gate electrode and the second gate electrode is over the gate insulating layer.
11. The display device according to claim 8 , wherein the display device further comprises a pixel electrode over the first wiring.
12. The display device according to claim 8 , wherein one of the first wiring or the second wiring is a source line.
13. The display device according to claim 8 , wherein the one island semiconductor layer comprises crystalline silicon.
14. The display device according to claim 8 , wherein the first layer comprises tungsten.
15. The display device according to claim 8 , wherein the second layer comprises metal nitride.