Mechanical stress-decoupling in semiconductor device
According to a method in semiconductor device fabrication, a first trench and a second trench are concurrently etched in a semi-finished semiconductor device. The first trench is a mechanical decoupling trench between a first region of an eventual semiconductor device and a second region thereof. The method further includes concurrently passivating or insulating sidewalls of the first trench and of the second trench. A related semiconductor device includes a first trench configured to provide a mechanical decoupling between a first region and a second region of the semiconductor device. The semiconductor device further includes a second trench and a sidewall coating at sidewalls of the first trench and the second trench. The sidewall coating at the sidewalls of the first trench and at the sidewalls of the second trench are of the same material.
1. A method comprising:
concurrently etching a first trench and a second trench in a semi-finished semiconductor device, wherein the first trench is a mechanical decoupling trench between a first region of an eventual semiconductor device and a second region thereof; and
concurrently passivating sidewalls of the first trench and of the second trench,
wherein the actions of currently etching and concurrently passivating are performed during a front-end-of-line process or a back-end-of-line process, wherein in the case of the front-end-of-line process the first trench and the second trench are formed in a front-end-of-line portion of the semi-finished semiconductor device, and in the case of the back-end-of-line process the first trench and the second trench are formed in a back-end-of-line portion of the semi-finished semiconductor device,
wherein the method further comprises etching a third trench in the semi-finished semiconductor device, wherein the third trench is a further mechanical decoupling trench between the first region and the second region of the semi-finished semiconductor device in the back-end-of-line portion, and wherein the first trench and the second trench are formed in the front-end-of-line portion,
wherein the first trench and the third trench are aligned to each other in a direction perpendicular to a main surface of the semi-finished semiconductor device, and
wherein etching the third trench comprises re-opening the first trench, and wherein the method further comprises concurrently passivating the sidewalls of the first trench and sidewalls of the third trench.
2. A method comprising:
concurrently etching a first trench and a second trench in a semi-finished semiconductor device, wherein the first trench is a mechanical decoupling trench between a first region of an eventual semiconductor device and a second region thereof; and
concurrently passivating sidewalls of the first trench and of the second trench,
wherein passivating or insulating the sidewalls of the first trench causes the first trench to be closed at a surface-near end of the first trench and thus a void or void-filament to be formed within the first trench, while the second trench is not closed when passivating or insulating the sidewalls, and
wherein the method further comprises:
performing a release etch of a structure of the semi-finished semiconductor device during a back-end-of-line process; and
re-opening the first trench during the release etch.
3. The method according to claim 1 , wherein the second trench is wider than the first trench.
4. A method comprising:
concurrently etching a first trench and a second trench in a semi-finished semiconductor device, wherein the first trench is a mechanical decoupling trench between a first region of an eventual semiconductor device and a second region thereof;
concurrently passivating sidewalls of the first trench and of the second trench; and
performing a Venetia process to form a cavity beneath the first region to provide a mechanical decoupling of the first region in a direction perpendicular to a main surface of the semi-finished semiconductor device, the cavity extending substantially parallel to said main surface at a depth within the semi-finished semiconductor device.
5. The method according to claim 1 , wherein the first and second trench are formed in a front-end-of-line portion of the semi-finished semiconductor device and the method further comprises:
filling at least the first trench with a fill material subsequent to passivating or insulating the sidewalls of the first trench; and
at least partially clearing out the first trench by etching at least one of the fill material, a passivation material of the sidewall of the first trench, and an insulation material of the sidewall of the first trench.