Stacked DRAM device and method of manufacture

1. A memory die for use in a memory device comprising:

a memory core having memory cell arrays interconnected by first and second distribution lines;

a first metal layer including the first distribution lines;

a second metal layer including the second distribution lines;

an interface circuit including input/output (I/O) circuitry that is not coupled to the memory core via any conductors on the memory die; and

wherein the memory core is configured to couple to a master die interface circuit formed on a master memory die.

2. The memory die according to claim 1 wherein the memory die comprises a slave memory die configured to communicate with a memory controller via a master memory die, and wherein the memory die is incapable of communicating command or data with the memory controller without the master memory die.

3. The memory die according to claim 2 wherein the slave memory die comprises at least one through-silicon-via (TSV) formed to couple the memory core of the slave memory die to the interface circuit of the master memory die.

4. The memory die according to claim 3 wherein the slave memory die receives power via the at least one TSV.

5. The memory die according to claim 1 wherein the memory die comprises a slave memory die configured to communicate with a memory controller via a buffer die, and wherein the memory die is incapable of communicating command or data with the memory controller without the buffer die.

6. The memory die according to claim 1 wherein the memory die is of a predetermined width, and is formed with a number of through-silicon-vias, wherein the number of through-silicon-vias is based on the predetermined width.

7. The memory die according to claim 1 , wherein the memory die comprises at least one through-silicon-via (TSV) coupled to at least one of the first metal layer or the second metal layer, wherein the at least one TSV is not coupled to the interface circuit via any conductors on the memory die.

8. The memory die according to claim 1 , wherein the interface circuit comprises at least one of an input/output driver, an input/output receiver, a re-driver, a decoder, an ESD circuit, and a multiplexing and data steering circuit.

9. A memory device comprising:

a master memory die; and

a slave memory die coupled to the master memory die in a stacked configuration, wherein each of the master and slave memory dies comprises:

memory core circuitry including memory cell arrays and first and second distribution lines interconnecting the memory cell arrays; a first metal layer including the first distribution lines;

a second metal layer including the second distribution lines; and

interface circuitry;

wherein the master memory die is further formed with a third metal layer and the memory core circuitry of the slave memory die couples to the interface circuitry of the master memory die via the third metal layer on the master memory die, and wherein the memory core circuitry of the slave memory die is not coupled to the interface circuitry of the slave memory die via any conductor formed on the slave memory die.

10. The memory device according to claim 9 wherein each of the master and slave dies further includes at least one through-silicon-via (TSV) formed to couple the core memory circuitry of the slave memory die to the interface circuitry of the master memory die.

11. The memory device according to claim 10 wherein the third metal layer of the master memory die is coupled to the at least one TSV of the slave memory die.

12. The memory device according to claim 9 wherein the interface circuitry of the slave memory die is decoupled from the first and second metal layers of the slave memory die.

13. The memory device according to claim 9 wherein the interface circuitry of the master memory die is configured to communicate with a memory controller through the third metal layer.

14. The memory device according to claim 9 wherein the third metal layer comprises a redistribution layer (RDL).

15. The memory device according to claim 10 wherein the slave memory die receives power from the at least one TSV formed on the slave memory die, and wherein the at least one TSV is coupled to the third metal layer on the master memory die.

16. A method of operating a memory die stack including a master memory die and a slave memory die, comprising:

selectively configuring a first multiplexer circuit included in the master memory die to provide selected one or more routes for data communication between array data lines of the master memory die and an interface circuit of the master memory die;

selectively configuring a second multiplexer circuit included in the slave memory die to provide one or more selected routes for data communication between array data lines of the slave memory die and a through-silicon-via (TSV) coupled to the interface circuit of the master memory die and;

wherein the array data lines of the slave memory die are selectively decoupled from I/O circuitry of the slave memory die when the array data lines are coupled to the interface circuit of the master memory die.

17. The method of claim 16 , wherein configuring the first and second multiplexer circuits are performed by asserting a first and a second set of address lines which control one or more multiplexers and de-multiplexers included in the respective first and second multiplexer circuits.

18. The method of claim 17 , further comprising, when the master memory die is selected, configuring the first multiplexer circuit but not asserting any of the address lines of the second set of address lines.

19. The method of claim 17 , further comprising, when the slave memory die is selected, configuring the first multiplexer circuit to connect only the TSV to the interface circuit and asserting the address lines of the second set of address lines to provide for data communication between the array data lines of the slave memory die and the TSV.