Semiconductor interconnect structure and manufacturing method thereof
The present disclosure provides an interconnect structure, including a low k dielectric layer with an air gap region and a non-air gap region. A first conductive line is positioned in the air gap region, and a second conductive line is positioned in the non-air gap region of the low k dielectric layer. A height of the first conductive line is different from a height of the second conductive line. The present disclosure also provides a method for manufacturing a semiconductor interconnect structure, including forming a photoresist layer over a hard mask layer with openings exposing a low k dielectric layer; treating the low k dielectric layer to be more hydrophilic through the openings of the hard mask layer; and removing the treated low k dielectric region to form an air gap in the air gap region.
1. An interconnect structure, comprising:
a low k dielectric layer over a substrate, comprising an air gap region having an air gap and a non-air gap region, the air gap further comprising a tapered sidewall and a bottom surface defined by the low k dielectric layer;
a first conductive line in the air gap region; and
a second conductive line in the non-air gap region,
wherein a major direction of the first conductive line and a major direction of the second conductive line are substantially perpendicular to the substrate, and a height of the first conductive line along the major direction thereof is different from a height of the second conductive line along the major direction thereof.
2. The interconnect structure of claim 1 , wherein a ratio of the height of the first conductive line and the height of the second conductive line is in a range of from about 0.8 to about 1.5.
3. The interconnect structure of claim 1 , wherein a separation between two adjacent first conductive lines is less than about 50 nm.
4. The interconnect structure of claim 1 , further comprising a cap layer over the air gap region of the low k dielectric layer.
5. The interconnect structure of claim 4 , further comprising a conformal layer composed of a single material being in direct contact with a top surface of the first conductive line and a top surface of the second conductive line.
6. The interconnect structure of claim 5 , wherein materials of the cap layer are substantially the same as materials of the conformal layer.
7. The interconnect structure of claim 6 , further comprising an internal low k material between two adjacent first conductive lines.
8. The interconnect structure of claim 7 , wherein a largest separation between a sidewall of the first conductive line and the internal low k material is below about 50 nm.
9. The interconnect structure of claim 5 , wherein the conformal layer comprising metal.
10. The interconnect structure of claim 1 ,
wherein a bottom portion of the first conductive line is surrounded by the low k dielectric layer and a top portion of the first conductive line is surrounded by an air gap of the air gap region.
11. The interconnect structure of claim 10 , further comprising:
a plurality of first conductive lines in the air gap region, a largest separation between two adjacent first conductive lines is less than about 50 nm.
12. The interconnect structure of claim 10 , further comprising:
a cap layer over the air gap region and the non-air gap region;
a third conductive line over the air gap region; and
a fourth conductive line over the non-air gap region.
13. The interconnect structure of claim 12 , wherein a width of the third conductive line is less than a width of the underlying first conductive line.
14. The interconnect structure of claim 12 , wherein the fourth conductive line is partially overlaid on the second conductive line.
15. A semiconductor interconnect structure, comprising:
a low k dielectric layer over a substrate;
an air gap in the low k dielectric layer, the air gap comprising a tapered sidewall and a substantially flat bottom surface defined by the low k dielectric layer;
a first conductive line in the low k dielectric layer, surrounded by the air gap; and
a second conductive line in the low k dielectric layer, surrounded by the low k dielectric layer;
wherein a bottom of the first conductive line is lower than a bottom of the second conductive line.
16. The semiconductor interconnect structure of claim 15 , further comprising a conformal barrier layer made of ceramics, metal oxynitride, dielectric film, or a combination thereof.
17. The semiconductor interconnect structure of claim 15 , further comprising a cap layer over the air gap, composed of ceramics, metal oxynitride, dielectric film, organic polymer films, or the combination thereof.
18. The semiconductor interconnect structure of claim 15 , wherein a difference between the bottom of the first conductive line and the bottom of the second conductive line is in a range of from about 10% to about 50% of a height of the first conductive line.
19. The semiconductor interconnect structure of claim 15 , wherein a width of the air gap between the first conductive line and the low k dielectric layer is less than about 50 nm.
20. The semiconductor interconnect structure of claim 15 , further comprising a conformal metal layer over a top surface and a sidewall of the first conductive line.