Semiconductor memory device
According to one embodiment, a semiconductor memory device includes a stacked body; a semiconductor body; a charge storage layer; a first conductor; a second conductor; and a third conductor. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends along a stacking direction of the stacked body. The first conductor is provided in the stacked body. The first conductor is in contact with the substrate. The second conductor includes a different material from the first conductor. The second conductor is in contact with a first portion of the first conductor. The third conductor includes a same material as the second conductor. The third conductor is in contact with a second portion of the first conductor.
1. A semiconductor device comprising:
a stacked body provided on a major surface of a substrate, the stacked body including a plurality of electrode layers stacked with an insulator interposed;
a semiconductor body provided in the stacked body, the semiconductor body extending along a stacking direction of the stacked body;
a charge storage layer provided between the semiconductor body and the electrode layers;
a first conductor provided in the stacked body, the first conductor extending along a first direction crossing the stacking direction;
a plurality of second conductors provided in the stacked body, the second conductors including a different material from the first conductor, the second conductors being in contact with first portions of the first conductor;
a plurality of third conductors provided in the stacked body, the third conductors including a same material as the second conductors, the third conductors being in contact with second portions of the first conductor;
a first interconnection provided on the stacked body, the first interconnection being electrically connected to the second conductors and the second conductors being provided below the first interconnection; and
a second interconnection provided on the stacked body, the second interconnection being electrically connected to the third conductors and the third conductors being provided below the second interconnection,
a portion of one of the second conductors connected with the first interconnection and a portion of one of the third conductors connected with the second interconnection being provided separately from each other in an extending direction of the first conductor.
2. The device according to claim 1 , further comprising a structure provided between the second conductors and the third conductors, the structure including a different material from the second conductors and the third conductors.
3. The device according to claim 2 , wherein
the structure includes silicon.
4. The device according to claim 1 , wherein
an air gap is provided between the second conductors and the third conductors.
5. A semiconductor device comprising:
a stacked body provided on a major surface of a substrate, the stacked body including a plurality of electrode layers stacked with an insulator interposed;
a semiconductor body provided in the stacked body, the semiconductor body extending along a stacking direction of the stacked body, the semiconductor body including a first portion, a second portion, and a third portion along the stacking direction, the second portion being provided between the first portion and the third portion;
a charge storage layer provided between the semiconductor body and the electrode layers;
a first conductor provided in the stacked body, the first conductor extending along a first direction crossing the stacking direction, the first conductor being in contact with the substrate;
a second conductor provided in the stacked body, the second conductor including a different material from the first conductor, the second conductor extending along the stacking direction and along the first direction, the second conductor being in contact with the first conductor; and
at least one recess portion provided in an upper surface of the second conductor;
the first portion including a channel of an upper-side select transistor; and
a bottom surface of the recess portion being lower than the first portion.
6. The device according to claim 5 , further comprising:
a first interconnection provided on the stacked body, the first interconnection being in contact with a first contact portion of the second conductor; and
a second interconnection provided on the stacked body, the second interconnection being in contact with a second contact portion of the second conductor; wherein
the recess portion is provided between the first contact portion and the second contact portion.
7. The device according to claim 5 , comprising a structure provided in the recess portion, the structure including a different material from the second conductor.
8. The device according to claim 7 , wherein
the structure includes silicon.
9. The device according to claim 5 , wherein
an air gap is provided in the recess portion.
10. A semiconductor device comprising:
a stacked body provided on a major surface of a substrate, the stacked body including a plurality of electrode layers stacked with an insulator interposed;
a semiconductor body provided in the stacked body, the semiconductor body extending along a stacking direction of the stacked body;
a charge storage layer provided between the semiconductor body and the electrode layers;
a first conductor provided in the stacked body, the first conductor extending along a first direction crossing the stacking direction, the first conductor being in contact with the substrate;
a second conductor provided in the stacked body, the second conductor including a different material from the first conductor, the second conductor extending along the stacking direction and along the first direction, the second conductor including a first contact portion and a second contact portion, the first contact portion and the second contact portion in contact with the first conductor; and
a first recess portion provided between the first contact portion and the second contact portion.
11. The device according to claim 10 , comprising a first structure provided in the first recess portion, the first structure including a different material from the second conductor.
12. The device according to claim 11 , wherein
the first structure includes silicon.
13. The device according to claim 10 , further comprising:
a first interconnection provided on the stacked body, the first interconnection being in contact with a third contact portion of the second conductor; and
a second interconnection provided on the stacked body, the second interconnection being in contact with a fourth contact portion of the second conductor.
14. The device according to claim 13 , wherein
the second conductor includes at least one second recess portion between the third contact portion and the fourth contact portion.
15. The device according to claim 14 , comprising a second structure provided in the second recess portion, the second structure including a different material from the second conductor.
16. The device according to claim 15 , wherein
the second structure includes silicon.