Semiconductor device
A transistor having favorable electrical characteristics. A transistor suitable for miniaturization. A transistor having a high switching speed. One embodiment of the present invention is a semiconductor device that includes a transistor. The transistor includes an oxide semiconductor, a gate electrode, and a gate insulator. The oxide semiconductor includes a first region in which the oxide semiconductor and the gate electrode overlap with each other with the gate insulator positioned therebetween. The transistor has a threshold voltage higher than 0 V and a switching speed lower than 100 nanoseconds.
1. A semiconductor device comprising:
a first transistor comprising:
an insulating layer having a projecting portion;
a first oxide semiconductor layer on the projecting portion of the insulating layer;
a source electrode and a drain electrode each electrically connected to the first oxide semiconductor layer;
a second oxide semiconductor layer overlapping with the first oxide semiconductor layer, the source electrode, and the drain electrode;
a gate insulating layer over the first oxide semiconductor layer, the source electrode, the drain electrode, and the second oxide semiconductor layer; and
a gate electrode over the gate insulating layer, the gate electrode overlapping with the first oxide semiconductor layer,
wherein a bottom surface of the gate electrode is positioned lower than a bottom surface of the first oxide semiconductor layer,
wherein a sum of a height of the projecting portion and a thickness of the first oxide semiconductor layer is greater than or equal to 30 nm and less than or equal to 300 nm, and
wherein the first transistor has a switching speed lower than 100 nanoseconds.
2. The semiconductor device according to claim 1 , wherein the first oxide semiconductor layer comprises indium and zinc.
3. The semiconductor device according to claim 1 ,
wherein the first oxide semiconductor layer comprises a region overlapping with the gate electrode, and
wherein the region has a carrier density lower than 1×10 15 cm −3 .
4. The semiconductor device according to claim 1 , wherein the first oxide semiconductor layer has a stacked-layer structure.
5. The semiconductor device according to claim 1 , further comprising:
a conductive layer under the insulating layer, the conductive layer overlapping with the first oxide semiconductor layer.
6. The semiconductor device according to claim 5 , wherein the conductive layer is electrically connected to the gate electrode.
7. The semiconductor device according to claim 1 , further comprising:
a second transistor under the insulating layer, the second transistor comprising a semiconductor layer,
wherein the second transistor is electrically connected to one of the source electrode and the drain electrode,
wherein a channel formation region in the first oxide semiconductor layer and a channel formation region in the semiconductor layer overlap with each other, and
wherein a material of the semiconductor layer is different from a material of the first oxide semiconductor layer.
8. A semiconductor device comprising:
a first transistor comprising:
an insulating layer having a projecting portion;
a first oxide semiconductor layer on the projecting portion of the insulating layer;
a source electrode and a drain electrode each electrically connected to the first oxide semiconductor layer;
a second oxide semiconductor layer overlapping with the first oxide semiconductor layer, the source electrode, and the drain electrode;
a gate insulating layer over the first oxide semiconductor layer, the source electrode, the drain electrode, and the second oxide semiconductor layer; and
a gate electrode over the gate insulating layer, the gate electrode overlapping with the first oxide semiconductor layer,
wherein an entire portion of each of the source electrode and the drain electrode overlaps with the first oxide semiconductor layer,
wherein a bottom surface of the gate electrode is positioned lower than a bottom surface of the first oxide semiconductor layer,
wherein a sum of a height of the projecting portion and a thickness of the first oxide semiconductor layer is greater than or equal to 30 nm and less than or equal to 300 nm, and
wherein the first transistor has a switching speed lower than 100 nanoseconds.
9. The semiconductor device according to claim 8 , wherein the first oxide semiconductor layer comprises indium and zinc.
10. The semiconductor device according to claim 8 ,
wherein the first oxide semiconductor layer comprises a region overlapping with the gate electrode, and
wherein the region has a carrier density lower than 1×10 15 cm −3 .
11. The semiconductor device according to claim 8 , wherein the first oxide semiconductor layer has a stacked-layer structure.
12. The semiconductor device according to claim 8 , further comprising:
a conductive layer under the insulating layer, the conductive layer overlapping with the first oxide semiconductor layer.
13. The semiconductor device according to claim 12 , wherein the conductive layer is electrically connected to the gate electrode.
14. The semiconductor device according to claim 8 , further comprising:
a second transistor under the insulating layer, the second transistor comprising a semiconductor layer,
wherein the second transistor is electrically connected to one of the source electrode and the drain electrode,
wherein a channel formation region in the first oxide semiconductor layer and a channel formation region in the semiconductor layer overlap with each other, and
wherein a material of the semiconductor layer is different from a material of the first oxide semiconductor layer.