Semiconductor device
To provide a semiconductor device that is suitable for miniaturization. The semiconductor device includes a first transistor, a second transistor over the first transistor, a barrier layer between the first transistor and the second transistor, a first electrode between the first transistor and the barrier layer, and a second electrode between the hairier layer and the second transistor and overlapping the first electrode with the barrier layer therebetween. A gate electrode of the first transistor, the first electrode, one of a source electrode and a drain electrode of the second transistor are electrically connected to one another. A channel is formed in a first semiconductor layer including a single crystal semiconductor in the first transistor. A channel is formed in a second semiconductor layer including an oxide semiconductor in the second transistor.
1. A semiconductor device comprising:
a first transistor;
a second transistor over the first transistor;
a capacitor;
a barrier layer between the first transistor and the second transistor;
a first wiring between the first transistor and the barrier layer; and
a second wiring between the barrier layer and the second transistor and overlapping the first wiring with the barrier layer therebetween,
wherein the first wiring, the barrier layer, and the second wiring form the capacitor,
wherein a first semiconductor layer included in the first transistor is made of a single crystal semiconductor and comprises a channel formation region of the first transistor, and
wherein a second semiconductor layer included in the second transistor comprises an oxide semiconductor and a channel formation region of the second transistor.
2. The semiconductor device according to claim 1 , wherein the barrier layer comprises at least one of silicon nitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, and hafnium oxynitride.
3. The semiconductor device according to claim 1 , further comprising:
an insulating layer comprising an oxide between the second transistor and the barrier layer,
wherein the insulating layer includes a region having a higher oxygen proportion than a stoichiometric composition of a material composing the region of the insulating layer.
4. The semiconductor device according to claim 1 , further comprising:
a third electrode comprising a same material and on and in contact with a same surface as the second wiring,
wherein the channel formation region of the second transistor overlaps the third electrode.
5. An electronic appliance comprising the semiconductor device according to claim 1 .
6. The semiconductor device according to claim 1 , further comprising:
a first insulating layer between the first transistor and the barrier layer; and
a second insulating layer between the second transistor and the barrier layer.
7. A semiconductor device comprising:
a first transistor;
a second transistor over the first transistor;
a capacitor;
a barrier layer between the first transistor and the second transistor;
a first wiring between the first transistor and the barrier layer; and
a second wiring between the barrier layer and the second transistor and overlapping the first wiring with the barrier layer therebetween,
wherein a gate electrode of the first transistor, the first wiring, one of a source electrode and a drain electrode of the second transistor are electrically connected to one another,
wherein the first wiring, the barrier layer, and the second wiring form the capacitor,
wherein a first semiconductor layer included in the first transistor is made of a single crystal semiconductor and comprises a channel formation region of the first transistor, and
wherein a second semiconductor layer included in the second transistor comprises an oxide semiconductor and a channel formation region of the second transistor.
8. The semiconductor device according to claim 7 , wherein the barrier layer comprises at least one of silicon nitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, and hafnium oxynitride.
9. The semiconductor device according to claim 7 , further comprising:
an insulating layer comprising an oxide between the second transistor and the barrier layer,
wherein the insulating layer includes a region having a higher oxygen proportion than a stoichiometric composition of a material composing the region of the insulating layer.
10. The semiconductor device according to claim 7 , further comprising:
a third electrode comprising a same material and on and in contact with a same surface as the second wiring,
wherein the channel formation region of the second transistor overlaps the third electrode.
11. An electronic appliance comprising the semiconductor device according to claim 7 .
12. The semiconductor device according to claim 7 , further comprising:
a first insulating layer between the first transistor and the barrier layer; and
a second insulating layer between the second transistor and the barrier layer.
13. A semiconductor device comprising:
a first transistor;
a second transistor over the first transistor;
a capacitor;
a barrier layer between the first transistor and the second transistor;
a first wiring between the first transistor and the barrier layer; and
a second wiring between the barrier layer and the second transistor and overlapping the first wiring with the barrier layer therebetween,
wherein a gate electrode of the first transistor, the second wiring, one of a source electrode and a drain electrode of the second transistor are electrically connected to one another,
wherein the first wiring, the barrier layer, and the second wiring form the capacitor,
wherein a first semiconductor layer included in the first transistor is made of a single crystal semiconductor and comprises a channel formation region of the first transistor, and
wherein a second semiconductor layer included in the second transistor comprises an oxide semiconductor and a channel formation region of the second transistor.
14. The semiconductor device according to claim 13 , wherein the barrier layer comprises at least one of silicon nitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, and hafnium oxynitride.
15. The semiconductor device according to claim 13 , further comprising:
an insulating layer comprising an oxide between the second transistor and the barrier layer,
wherein the insulating layer includes a region having a higher oxygen proportion than a stoichiometric composition of a material composing the region of the insulating layer.
16. The semiconductor device according to claim 13 , further comprising:
a third electrode comprising a same material and on and in contact with a same surface as the second wiring,
wherein the channel formation region of the second transistor overlaps the third electrode.
17. An electronic appliance comprising the semiconductor device according to claim 13 .
18. The semiconductor device according to claim 13 , further comprising:
a first insulating layer between the first transistor and the barrier layer; and
a second insulating layer between the second transistor and the barrier layer.
19. A semiconductor device comprising:
a first transistor;
a second transistor over the first transistor;
a capacitor;
a barrier layer between the first transistor and the second transistor;
a first wiring between the first transistor and the barrier layer; and
a second wiring between the barrier layer and the second transistor and overlapping the first wiring with the barrier layer therebetween,
wherein a gate electrode of the first transistor, the first wiring, one of a source electrode and a drain electrode of the second transistor are electrically connected to one another,
wherein the first wiring, the barrier layer, and the second wiring form the capacitor,
wherein a first semiconductor layer included in the first transistor is made of a single crystal semiconductor and comprises a channel formation region of the first transistor,
wherein a second semiconductor layer included in the second transistor comprises an oxide semiconductor and a channel formation region of the second transistor, and
wherein the channel formation region of the second transistor overlaps the second wiring.
20. The semiconductor device according to claim 19 , wherein the barrier layer comprises at least one of silicon nitride, silicon nitride oxide, aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, and hafnium oxynitride.
21. The semiconductor device according to claim 19 , further comprising:
an insulating layer comprising an oxide between the second transistor and the barrier layer,
wherein the insulating layer includes a region having a higher oxygen proportion than a stoichiometric composition of a material composing the region of the insulating layer.
22. An electronic appliance comprising the semiconductor device according to claim 19 .
23. The semiconductor device according to claim 19 , further comprising:
a first insulating layer between the first transistor and the barrier layer; and
a second insulating layer between the second transistor and the barrier layer.
24. A semiconductor device comprising:
a first transistor;
a second transistor over the first transistor;
a capacitor;
a first layer and a second layer sandwiching the second transistor, each of the first layer and the second layer comprising aluminum and oxygen;
a first wiring and a second wiring sandwiching one of the first layer and the second layer, the first wiring and the second wiring overlapping so that the first wiring, the second wiring, and the one of the first layer and the second layer form the capacitor,
wherein a first semiconductor layer included in the first transistor is made of a single crystal semiconductor and comprises a channel formation region of the first transistor, and
wherein a second semiconductor layer included in the second transistor comprises an oxide semiconductor and a channel formation region of the second transistor.
25. The semiconductor device according to claim 24 ,
wherein a gate electrode of the first transistor, one of a source electrode and a drain electrode of the second transistor, and the first wiring form an electrical node when represented on a circuit diagram.
26. The semiconductor device according to claim 25 ,
wherein the first wiring is provided below the second wiring.
27. The semiconductor device according to claim 25 ,
wherein the gate electrode of the first transistor, the one of the source electrode and the drain electrode of the second transistor, and the first wiring overlap.
28. The semiconductor device according to claim 24 ,
wherein the one of the first layer and the second layer is provided in a horizontal plane between the first transistor and the second transistor.
29. The semiconductor device according to claim 24 ,
wherein the one of the first layer and the second layer is an aluminum oxide layer.
30. The semiconductor device according to claim 24 ,
wherein the one of the first layer and the second layer is an aluminum oxide layer in direct contact with each of the first wiring and the second wiring.