Organic photoelectronic device and image sensor

1. An organic photoelectronic device, comprising:

a first electrode;

a light-absorption layer on one side of the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material;

a light-absorption auxiliary layer on one side of the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that has a smaller full width at half maximum (FWHM) than the light-absorption layer;

a charge auxiliary layer on one side of the light-absorption auxiliary layer; and

a second electrode on one side of the charge auxiliary layer.

2. The organic photoelectronic device of claim 1 , wherein the light-absorption layer and the light-absorption auxiliary layer are substantially in contact with each other.

3. The organic photoelectronic device of claim 1 , wherein the second electrode is at a side from which light is incident.

4. The organic photoelectronic device of claim 1 , wherein the second p-type light-absorption material or the second n-type light-absorption material has a smaller FWHM than a FWHM of the light-absorption layer by about 5 nm or more.

5. The organic photoelectronic device of claim 1 , wherein an external quantum efficiency (EQE) of the second p-type light-absorption material or the second n-type light-absorption material at a maximum absorption wavelength (λ max ) is equal to or higher than an external quantum efficiency (EQE) of the light-absorption layer at a maximum absorption wavelength (λ max ).

6. The organic photoelectronic device of claim 1 , wherein a FWHM of the light-absorption layer is wider than a FWHM of the first p-type light-absorption material or the first n-type light-absorption material.

7. The organic photoelectronic device of claim 1 , wherein the second p-type light-absorption material is the same as or different from the first p-type light-absorption material, and

the second n-type light-absorption material is the same as or different from the first n-type light-absorption material.

8. The organic photoelectronic device of claim 1 , wherein the second p-type light-absorption material or the second n-type light-absorption material is represented by the following Chemical Formula 1:

wherein

R a to R l are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen atom, a halogen-containing group, or a combination thereof, and

X is a halogen atom, a halogen-containing group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 aryloxy group, a substituted or unsubstituted C1 to C30 heteroaryloxy group, a substituted or unsubstituted silyloxy group, a substituted or unsubstituted amine group, a substituted or unsubstituted arylamine group, or a combination thereof.

9. The organic photoelectronic device of claim 8 , wherein the second p-type light-absorption material is the same as the first p-type light-absorption material, and

the second n-type light-absorption material is the same as the first n-type light-absorption material.

10. The organic photoelectronic device of claim 9 , wherein the first p-type light-absorption material or the first n-type light-absorption material is represented by the following Chemical Formula 2:

wherein

R m to R x are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen atom, a halogen-containing group, or a combination thereof, and

Y is a halogen atom.

11. The organic photoelectronic device of claim 1 , wherein the light-absorption layer and the light-absorption auxiliary layer are configured to absorb light in a green wavelength region.

12. The organic photoelectronic device of claim 1 , wherein the light-absorption auxiliary layer has a FWHM of less than or equal to about 90 nm.

13. The organic photoelectronic device of claim 1 , wherein the charge auxiliary layer is not configured to substantially absorb light in a visible wavelength region.

14. The organic photoelectronic device of claim 1 , wherein the first electrode and the second electrode comprise a transparent electrode, respectively.

15. An image sensor comprising the organic photoelectronic device of claim 1 .

16. The image sensor of claim 15 , wherein the image sensor comprises a semiconductor substrate integrated with a plurality of first photo-sensing devices sensing light in a blue wavelength region and a plurality of second photo-sensing devices sensing light in a red wavelength region, and

the organic photoelectronic device is on the semiconductor substrate and is configured to selectively absorb light in a green wavelength region.

17. The image sensor of claim 16 , further comprising a color filter layer including a blue filter configured to selectively absorb light in a blue wavelength region and a red filter configured to selectively absorb light in a red wavelength region, and the color filter layer being between the semiconductor substrate and the organic photoelectronic device.

18. The image sensor of claim 16 , wherein the first photo-sensing device and the second photo-sensing device are stacked.

19. The image sensor of claim 15 , wherein a green photoelectronic device includes the organic photoelectronic device, a blue photoelectronic device configured to selectively absorb light in a blue wavelength region, and a red photoelectronic device configured to selectively absorb light in a red wavelength region are stacked.

20. An electronic device including the image sensor of claim 15 .

21. A photoelectronic device, comprising:

a first electrode;

a second electrode apart from the first electrode;

a light-absorption layer between the first and the second electrodes and including a first p-type light-absorption material and a first n-type light-absorption material;

a light-absorption auxiliary layer between the light absorption layer and the second electrode and including a second p-type light-absorption material or a second n-type light-absorption material having a smaller full width at half maximum (FWHM) than the light-absorption layer; and

a charge auxiliary layer between the light-absorption auxiliary layer and the second electrode.

22. The photoelectronic device of claim 21 , wherein the second electrode is at a side from which light is incident.

23. The photoelectronic device of claim 21 , wherein the second p-type light-absorption material or the second n-type light-absorption material comprises:

wherein

R a to R l are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen atom, a halogen-containing group, or a combination thereof, and

X is a halogen atom, a halogen-containing group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 aryloxy group, a substituted or unsubstituted C1 to C30 heteroaryloxy group, a substituted or unsubstituted silyloxy group, a substituted or unsubstituted amine group, a substituted or unsubstituted arylamine group, or a combination thereof.

24. The organic photoelectronic device of claim 21 , wherein at least one of the first p-type light-absorption material and the first n-type light-absorption material comprises:

wherein

R m to R x are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen atom, a halogen-containing group, or a combination thereof, and

Y is a halogen atom.