Transducer to convert optical energy to electrical energy
A transducer to convert optical energy to electrical energy. The transducer or photo-transducer has a base layer which has a group of connecting elements formed therein at separations which are increasing with the distance away from an emitter layer formed atop the base layer. The connecting elements separate and electrically connect the base layer into base segments, the base segments having increasing thicknesses with the distance away from the emitter layer. The photo-transducer generates an output voltage that is greater than the input light photovoltage. The photo-transducer output voltage is proportional to the number of connecting elements formed in the base layer.
1. A transducer to convert optical energy to electrical energy, the transducer comprising:
a semiconductor emitter layer, the semiconductor emitter being one of n-doped and p-doped;
semiconductor base layers, the semiconductor base layers being p-doped when the semiconductor emitter layer is n-doped, the semiconductor base layers being n-doped when the semiconductor emitter layer is p-doped, the semiconductor emitter layer and the semiconductor base layers each having a same bandgap energy, one of the semiconductor base layers adjoining the semiconductor emitter layer to form a p-n junction having associated thereto a first electric potential; and
at least one connecting element formed between adjacent semiconductor base layers to electrically connect the adjacent semiconductor base layers to each other, each connecting element being configured to generate a respective additional electric potential between the adjacent semiconductor base layers;
the transducer having an overall electric potential that consists of the sum of the first electric potential and of each respective additional electric potential, each respective additional electric potential being equal to the first electric potential;
the transducer to receive light that propagates through, and is partially absorbed in, the semiconductor emitter layer and then sequentially propagates through, and is partially absorbed in, each of the semiconductor base layers, each semiconductor base layer having a thickness designed to absorb a same number of photons.
2. The transducer of claim 1 wherein:
the transducer is to convert the optical energy of a light signal having associated thereto a wavelength, and
the semiconductor emitter layer and each of the semiconductor base layers have associated thereto a bandgap, the bandgap being substantially equal to a photon energy of the light signal.
3. The transducer of claim 2 wherein:
each connecting element comprises a tunnel diode unit and a semiconductor intermediate layer adjoining the tunnel diode unit and a semiconductor base layer,
the semiconductor intermediate layer has a bandgap equal to, or greater than, the photon energy of the light signal,
the semiconductor intermediate layer is n-doped when the semiconductor base layers are p-doped, and
the semiconductor intermediate layer being p-doped when the semiconductor base layer are n-doped.
4. The transducer of claim 1 wherein:
the semiconductor emitter layer includes GaAs and n-type dopants, and
the semiconductor base layers include GaAs and p-type dopants.
5. The transducer of claim 1 wherein:
the semiconductor emitter layer includes GaAs and p-type dopants, and
the semiconductor base layers include GaAs and n-type dopants.
6. The transducer of claim 1 further comprising a substrate upon which are formed the semiconductor base layers, the connecting elements and the semiconductor emitter layer.
7. The transducer of claim 6 wherein the substrate is one of a GaAs substrate and a Ge substrate.
8. The transducer of claim 1 wherein:
the semiconductor emitter layer and the semiconductor base layers comprise Ge,
the semiconductor emitter layer comprises n-type dopants, and
the semiconductor base layers comprise p-type dopants.
9. The transducer of claim 1 wherein:
the semiconductor emitter layer and the semiconductor base layers comprise Ge,
the semiconductor emitter layer comprises p-type dopants, and
the semiconductor base layers comprise n-type dopants.
10. The transducer of claim 1 wherein:
the semiconductor emitter layer and the semiconductor base layers comprise InP,
the semiconductor emitter layer comprises n-type dopants, and
the semiconductor base layers comprise p-type dopants.
11. The transducer of claim 1 wherein:
the semiconductor emitter layer and the semiconductor base layers comprise InP,
the semiconductor emitter layer comprises p-type dopants, and
the semiconductor base layers comprise n-type dopants.
12. The transducer of claim 1 wherein:
the semiconductor emitter layer and the semiconductor base layers comprise Si,
the semiconductor emitter layer comprises n-type dopants, and
the semiconductor base layers comprise p-type dopants.
13. The transducer of claim 1 wherein:
the semiconductor emitter layer and the semiconductor base layers comprise Si,
the semiconductor emitter layer comprises p-type dopants, and
the semiconductor base layers comprise n-type dopants.
14. The transducer of claim 1 wherein:
the semiconductor emitter layer and the semiconductor base layers comprise GaSb,
the semiconductor emitter layer comprises n-type dopants, and
the semiconductor base layers comprise p-type dopants.
15. The transducer of claim 1 wherein:
the semiconductor emitter layer and the semiconductor base layers comprise GaSb,
the semiconductor emitter layer comprises p-type dopants, and
the semiconductor base layers comprise n-type dopants.
16. The transducer of claim 1 wherein:
the semiconductor emitter layer and the semiconductor base layers comprise at least one of GaN, InN, InGaAIN, InGaAIAsP and InGaAs,
the semiconductor emitter layer comprises n-type dopants, and
the semiconductor base layers comprise p-type dopants.
17. The transducer of claim 1 wherein:
the semiconductor emitter layer and the semiconductor base layers comprise at least one of GaN, InN, InGaAIN, InGaAIAsP and InGaAs,
the semiconductor emitter layer comprises p-type dopants, and
the semiconductor base layers comprise n-type dopants.
18. A transducer to convert optical energy to electrical energy, the transducer comprising:
a light-input surface;
a semiconductor emitter layer, the semiconductor emitter being one of n-doped and p-doped;
semiconductor base layers, the semiconductor base layers being p-doped when the semiconductor emitter layer is n-doped, the semiconductor base layers being n-doped when the semiconductor emitter layer is p-doped, the semiconductor emitter layer and the semiconductor base layers each having substantially a same bandgap energy, one of the semiconductor base layers adjoining the semiconductor emitter layer to form a p-n junction having associated thereto a first electric potential; and
at least one connecting element formed between adjacent semiconductor base layers to electrically connect the adjacent semiconductor base layers to each other, each connecting element being configured to generate a respective additional electric potential between the adjacent semiconductor base layers,
the transducer having an overall electric potential that consists of the sum of the first electric potential and of each respective additional electric potential, each respective additional electric potential being equal to the first electric potential,
the light-input surface to receive light and to transmit the light to the semiconductor emitter layer, the light to propagate through, and be partially absorbed in, the semiconductor emitter layer and to sequentially propagate through, and be partially absorbed in, each of the semiconductor base layers, each semiconductor base layer having a thickness designed to absorb a same number of photons.
19. A transducer and data receiver unit comprising:
a transducer to convert optical energy to electrical energy, the transducer having:
a semiconductor emitter layer, the semiconductor emitter being one of n-doped and p-doped;
semiconductor base layers, the semiconductor base layers being p-doped when the semiconductor emitter layer is n-doped, the semiconductor base layers being n-doped when the semiconductor emitter layer is p-doped, the semiconductor emitter layer and the semiconductor base layers each having a same bandgap energy, one of the semiconductor base layers adjoining the semiconductor emitter layer to form a p-n junction having associated thereto a first electric potential; and
at least one connecting element formed between adjacent semiconductor base layers to electrically connect the adjacent semiconductor base layers to each other, each connecting element being configured to generate a respective additional electric potential between the adjacent semiconductor base layers,
the transducer having an overall electric potential that that consists of the sum of the first electric potential and of each respective additional electric potential, each respective additional electric potential being equal to the first electric potential,
the transducer to receive light that propagates through, and is partially absorbed in, the semiconductor emitter layer and then sequentially propagates through, and is partially absorbed in, each of the semiconductor base layers, each semiconductor base layer having a thickness designed to absorb a same number of photons; and
an optical signal detector to detect an optical data signal having associated thereto a photon energy that is less than a photon energy of the light absorbed in the transducer unit, the optical detector comprising a Ge substrate and a p-n junction formed in the Ge substrate, the transducer unit being formed upon the Ge substrate.
20. A power meter unit comprising:
a transducer to convert optical energy to electrical energy, the transducer comprising:
a light-input surface;
a semiconductor emitter layer, the semiconductor emitter being one of n-doped and p-doped;
semiconductor base layers, the semiconductor base layers being p-doped when the semiconductor emitter layer is n-doped, the semiconductor base layers being n-doped when the semiconductor emitter layer is p-doped, the semiconductor emitter layer and the semiconductor base layers each having substantially a same bandgap energy, one of the semiconductor base layers adjoining the semiconductor emitter layer to form a p-n junction having associated thereto a first electric potential; and
at least one connecting element formed between adjacent semiconductor base layers to electrically connect the adjacent semiconductor base layers to each other, each connecting element being configured to generate a respective additional electric potential between the adjacent semiconductor base layers,
the transducer having an overall electric potential that consists of the sum of the first electric potential and of each respective additional electric potential, each respective additional electric potential being equal to the first electric potential,
the light-input surface to receive light and to transmit the light to the semiconductor emitter layer, the light to propagate through, and be partially absorbed in, the semiconductor emitter layer and to sequentially propagate through, and be partially absorbed in, each of the semiconductor base layers, each semiconductor base layer having a thickness designed to absorb a same number of photons,
readout circuitry operationally connected to the transducer, the readout circuitry to obtain a signal from the transducer, the signal being indicative of an optical power of light impinging on the transducer, the readout circuit to generate an output electrical signal;
a processor operationally connected to the readout circuitry, the processor to obtain the output electrical signal;
charging circuitry operationally connected to the processor; and
a battery operationally connected to the charging circuitry, the processor to control the charging circuitry to charge the battery in accordance with the electric signal.