Light emitting diode having electrode pads
A light-emitting diode includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells includes a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.
1. A light emitting diode, comprising:
a first conductive type semiconductor layer;
a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer;
an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
an electrode layer covering the second conductive type semiconductor layer;
a second electrode pad comprising a first region arranged on the first conductive type semiconductor layer, a second region arranged on the electrode layer, and a third region arranged between the first and second regions; and
an insulation layer disposed between the first conductive type semiconductor layer and the second electrode pad, the insulation layer insulating the second electrode pad from the first conductive type semiconductor layer and contacting the second electrode pad and the first conductive type semiconductor layer,
wherein:
the third region of the second electrode pad is disposed on side surfaces of the second conductive type semiconductor layer;
the side surfaces of the second conductive type semiconductor layer and the active layer are insulated from the second electrode pad by the insulation layer; and
the side surfaces of the second conductive type semiconductor layer and the active layer have a degree of inclination in the range of 30 to 70 degrees.
2. The light emitting diode of claim 1 , further comprising a connecting portion connected to the second electrode pad and arranged on the electrode layer.
3. The light emitting diode of claim 1 , wherein the insulation layer extends to and is disposed on an upper surface of the electrode layer.
4. The light emitting diode of claim 1 , wherein the second electrode pad and the second conductive type semiconductor layer are separated from each other by at least the insulation layer.
5. The light emitting diode of claim 1 , wherein the insulation layer comprises a distributed Bragg reflector (DBR).
6. The light emitting diode of claim 1 , wherein:
the insulation layer is arrange on an edge of the first conductive type semiconductor layer; and
the second electrode pad is spaced apart from the edge of the first conductive type semiconductor layer.
7. The light emitting diode of claim 1 , wherein the electrode layer comprises a transparent material.
8. The light emitting diode of claim 7 , wherein the electrode layer comprises indium tin oxide (ITO).
9. The light emitting diode of claim 1 , wherein the second conductive type semiconductor layer and the active layer are divided to define at least two light emitting regions.
10. The light emitting diode of claim 9 , further comprising a first electrode pad connected to the first conductive type semiconductor layer,
wherein the at least two light emitting regions are arranged symmetrically with respect to an imaginary line through the first electrode pad and the second electrode pad.
11. The light emitting diode of claim 10 , further comprising at least one first extension connected to the first electrode pad,
wherein a first lower extension of the at least one first extension is arranged between a first light emitting region and a second light emitting region of the at least two light emitting regions.