Analog switch circuit applicable to high frequency signal
An analog switch circuit is disclosed. The analog switch circuit includes a MOSFET and a control switch. The MOSFET includes a drain electrode, a source electrode, a gate electrode, and a body electrode. A gate bias is applied on the gate electrode to control whether the MOSFET is ON or OFF. The control switch includes a control terminal, a first terminal, a second terminal, and a third terminal. A control bias relating to the gate bias is applied to the control terminal so that the first terminal is connected to the second terminal when the MOSFET is ON, and the first terminal is connected to the third terminal when the MOSFET is OFF. The second terminal is connected to a first voltage source providing a first bias. The third terminal is connected to a second voltage source providing a second bias different from the first bias.
1. An analog switch circuit, applicable to a high frequency signal, comprising:
a metal-oxide-semiconductor field-effect transistor, comprising a drain electrode, a source electrode, a gate electrode, and a body electrode, wherein a gate bias is applied to the gate electrode to control whether the metal-oxide-semiconductor field-effect transistor is ON or OFF; and
a control switch, comprising a control terminal, a first terminal, a second terminal, and a third terminal, the first terminal connected to the body electrode, wherein a control bias relating to the gate bias is applied to the control terminal, so that the first terminal is connected to the second terminal when the metal-oxide-semiconductor field-effect transistor is ON, and the first terminal is connected to the third terminal when the metal-oxide-semiconductor field-effect transistor is OFF;
wherein the second terminal is connected to a first resistor with a first resistance, and the third terminal is connected to a second resistor with a second resistance lower than the first resistance.
2. The analog switch circuit of claim 1 , wherein the second terminal is connected to a first voltage source providing a first bias through the first resistor, and the third terminal is connected to a second voltage source providing a second bias different from the first bias through the second resistor.
3. The analog switch circuit of claim 2 , further comprising:
a signal providing circuit, connected to the drain electrode or the source electrode and providing a high frequency signal with a frequency higher than 4 GHz.
4. The analog switch circuit of claim 2 , wherein the metal-oxide-semiconductor field-effect transistor is an N-type metal-oxide-semiconductor field-effect transistor, and the first bias is higher than the second bias.
5. The analog switch circuit of claim 4 , further comprising:
a signal providing circuit, connected to the drain electrode or the source electrode and providing a high frequency signal with a frequency higher than 4 GHz.
6. The analog switch circuit of claim 2 , wherein the metal-oxide-semiconductor field-effect transistor is a P-type metal-oxide-semiconductor field-effect transistor, and the first bias is lower than the second bias.
7. The analog switch circuit of claim 6 , further comprising:
a signal providing circuit, connected to the drain electrode or the source electrode and providing a high frequency signal with a frequency higher than 4 GHz.