Polishing method and polishing apparatus
A polishing method is used for polishing a film formed on a substrate by pressing the substrate against a polishing pad. The polishing method includes preparing, in advance, an algorithm for correction of polishing time from a relationship between a known amount of wear of the polishing pad or a known thickness of the polishing pad, and a polishing time and a polishing amount; setting a polishing target value for the film; and measuring an amount of wear of the polishing pad or a thickness of the polishing pad. The polishing method further includes determining an optimal polishing time for the polishing target value from the measured amount of wear of the polishing pad or the measured thickness of the polishing pad and from the algorithm; and polishing the film for the determined optimal polishing time.
1. A polishing apparatus for polishing a film formed on a substrate by pressing the substrate against a polishing pad on a polishing table, comprising:
a polishing pad measuring device configured to measure a thickness of the polishing pad used for polishing;
a modulus of elasticity measuring device configured to measure a modulus of elasticity of the polishing pad;
a memory unit configured to store the thickness of the polishing pad, measured by the polishing pad measuring device and to store the modulus of elasticity of the polishing pad;
a storage unit configured to store an algorithm for correction of polishing time, wherein the algorithm is prepared based on the combination of:
a known thickness value, a known modulus of elasticity of the polishing pad value, a polishing time required to polish a predetermined polishing amount of the substrate by the polishing pad having the known thickness value and the known modulus of elasticity of the polishing pad value, and the predetermined polishing amount, or
the known thickness value, the known modulus of elasticity of the polishing pad value, a polishing amount obtained when the substrate is polished by a predetermined polishing time by the polishing pad having the known thickness value and the known modulus of elasticity of the polishing pad value, and the predetermined polishing time; and
a calculation unit configured to calculate an optimal polishing time for a polishing target value, wherein the optimal polishing time for the polishing target value is calculated based on the combination of: a current thickness of the polishing pad measured by the polishing pad measuring device,
a current modulus of elasticity measured by the modulus of elasticity measuring device, and
the algorithm for correction of polishing time.
2. The polishing apparatus according to claim 1 , further comprising a film thickness measuring device configured to measure an initial thickness of the film on the substrate;
wherein the measured initial thickness of the film is stored in the memory unit.
3. A polishing apparatus for polishing a film formed on a substrate by pressing the substrate against a polishing pad on a polishing table, comprising:
a polishing pad measuring device configured to measure an amount of wear of the polishing pad;
a modulus of elasticity measuring device configured to measure a modulus of elasticity of the polishing pad;
a memory unit configured to store the amount of wear of the polishing pad measured by the polishing pad measuring device and to store the modulus of elasticity of the polishing pad;
a storage unit configured to store an algorithm for correction of polishing time, wherein the algorithm is prepared from:
a relationship between a known amount of wear and a known modulus of elasticity of a polishing pad, and the polishing time required to polish a predetermined polishing amount of the substrate by the polishing pad having the known amount of wear and the known modulus of elasticity of the polishing pad, and the predetermined polishing amount, or
a relationship between the known amount of wear and the known modulus of elasticity of the polishing pad, and a polishing amount obtained when the substrate is polished by a predetermined polishing time by the polishing pad having the known amount of wear and the known modulus of elasticity of the polishing pad, and the predetermined polishing time; and
a calculation unit configured to calculate an optimal polishing time for a polishing target value, wherein the optimal polishing time for the polishing target value is calculated from the combination of:
a current amount of wear of the polishing pad measured by the polishing pad measuring device,
a current modulus of elasticity measured by the modulus of elasticity measuring device, and
the algorithm for correction of polishing time.
4. The polishing apparatus as recited in claim 3 wherein the amount of wear of the polishing pad measured by the polishing pad measuring device is determined by measuring a thickness of the polishing pad.
5. The polishing apparatus as recited in claim 1 , wherein the algorithm for correction of polishing time has a self-correction function comprising:
measuring the thickness of the polishing pad, the modulus of elasticity of the polishing pad, the polishing amount and the polishing time, when the substrate is polished, and
correcting the algorithm based on a result of the measuring.
6. The polishing apparatus as recited in claim 3 , wherein the algorithm for correction of polishing time has a self-correction function comprising:
measuring the amount of wear of the polishing pad, the modulus of elasticity of the polishing pad, the polishing amount and the polishing time, when the substrate is polished, and
correcting the algorithm based on a result of the measuring.
7. The polishing apparatus as recited in claim 1 , wherein the optimal polishing time comprises the time required to polish a predetermined polishing amount of the film by the polishing pad.
8. The polishing apparatus as recited in claim 3 , wherein the optimal polishing time comprises the time required to polish a predetermined polishing amount of the film by the polishing pad.