Polymers for hard masks, hard mask compositions including the same, and methods for forming a pattern of a semiconductor device using a hard mask composition
The present inventive concepts relate to a polymer for a hard mask, a hard mask composition including a polymer for a hard mask as described herein, and a method for forming a pattern of a semiconductor device using a hard mask composition as described herein. The polymer includes a structure represented by the following chemical formula 1. In chemical formula 1, “A”, “Q”, “L”, “R 1 ”, “R 2 ”, “R 3 ”, and “n” are the same as defined in the specification.
1. A polymer comprising a structure represented by chemical formula 3:
wherein X is selected from the group consisting of O, S, and NH;
Q is a benzene group or a substituted or unsubstituted polycyclic aromatic group;
L is a C1 to C20 alkylene group;
R 1 and R 2 are each independently attached to one of the at least two aromatic rings and are each independently selected from the group consisting of hydrogen, a hydroxyl group, an amino group, and a substituted or unsubstituted C1 to C30 alkoxy group;
R 3 is hydrogen, a hydroxyl group, or a substituted or unsubstituted C1 to C30 alkoxy group; and
n is a natural number from 1 to 10.
2. The polymer of claim 1 , wherein the polymer comprises a structure represented by chemical formula 3a:
wherein n in the chemical formula 3a is a natural number from 1 to 10.
3. The polymer of claim 1 , wherein the substituted or unsubstituted polycyclic aromatic group includes a naphthalene group, an anthracene group, a pyrene group, or any combination thereof.
4. The polymer of claim 1 , wherein the polymer has a weight-average molecular weight of 1,000 to 10,000.
5. The polymer of claim 1 , wherein the polymer comprises a structure represented by chemical formula 3b:
wherein n in the chemical formulas 3a and 3b is a natural number from 1 to 10.
6. A hard mask composition comprising:
an organic solvent; and
the polymer of claim 1 .
7. The hard mask composition of claim 6 , wherein the polymer includes a structure represented by chemical formula 3a:
wherein n in chemical formula 3a is a natural number from 1 to 10.
8. The hard mask composition of claim 6 , wherein the substituted or unsubstituted polycyclic aromatic group includes a naphthalene group, an anthracene group, a pyrene group, or any combination thereof.
9. The hard mask composition of claim 6 , wherein the polymer is present in the hard mask composition in an amount in a range of about 2 wt % to about 20 wt % with respect to a total content of the hard mask composition.
10. The hard mask composition of claim 6 , wherein the organic solvent includes at least one of a glycol ether-based solvent, an acetate-based solvent, a ketone-based solvent, a hydroxypropionate-based solvent, a cabitol-based solvent, or a lactate or lactone-based solvent.
11. The hard mask composition of claim 6 , wherein the polymer comprises a structure represented by chemical formula 3b:
wherein n in the chemical formula 3b is a natural number from 1 to 10.
12. A method for forming a pattern of a semiconductor device, the method comprising:
forming a lower layer on a substrate;
forming a hard mask layer on the lower layer using the polymer of claim 1 ; and
patterning the hard mask layer to form a hard mask pattern,
wherein the patterning of the hard mask layer comprises:
forming photoresist patterns on the hard mask layer; and
etching the hard mask layer using the photoresist patterns as etch masks.
13. The method of claim 12 , wherein forming the hard mask layer comprises:
coating the hard mask composition on the lower layer using a spin-on-coating method; and
performing a bake process on the coated hard mask composition.
14. A polymer comprising a structure represented by chemical formula 2d:
wherein n is a natural number from 1 to 10.
15. A hard mask composition comprising:
an organic solvent; and
the polymer of claim 14 .
16. A method for forming a pattern of a semiconductor device, the method comprising:
forming a lower layer on a substrate;
forming a hard mask layer on the lower layer using the polymer of claim 14 ; and
patterning the hard mask layer to form a hard mask pattern,
wherein the patterning of the hard mask layer comprises:
forming photoresist patterns on the hard mask layer; and
etching the hard mask layer using the photoresist patterns as etch masks.
17. A polymer comprising a structure represented by one or more of chemical formulas 4b and 4c:
wherein n in chemical formulas 4b and 4c is a natural number from 1 to 10.
18. A hard mask composition comprising:
an organic solvent; and
the polymer of claim 17 .
19. A method for forming a pattern of a semiconductor device, the method comprising:
forming a lower layer on a substrate;
forming a hard mask layer on the lower layer using the polymer of claim 17 ; and
patterning the hard mask layer to form a hard mask pattern,
wherein the patterning of the hard mask layer comprises:
forming photoresist patterns on the hard mask layer; and
etching the hard mask layer using the photoresist patterns as etch masks.