IP Library › Granted Patent US 9,678,042
Granted Patent B2
US 9,678,042 · App. 14/355,581 · Granted Jun 13, 2017

Surface acoustic wave sensor

Inventors: Takashi Kogai (Kawagoe, JP); Hiromi Yatsuda (Kawagoe, JP)
Assignee: JAPAN RADIO CO., LTD.
G01N29/222G01N29/022G01N29/024G01N29/036G01N2291/0255G01N2291/0256G01N2291/0423
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Quick Facts
Patent No.
US 9,678,042
App. No.
14/355,581
Granted
Jun 13, 2017
Kind
B2
Abstract

A surface acoustic wave sensor of the invention includes: a piezo element that propagates a surface acoustic wave; an electrode that carries out conversion of an electrical signal and a surface acoustic wave; and a porous base member into which liquid infiltrates and which comes into contact with the piezo element.

Claims (72)

1. A surface acoustic wave sensor comprising:

a piezo element that propagates a surface acoustic wave;

an electrode that carries out conversion of an electrical signal and a surface acoustic wave;

a porous base member which is disposed at a propagation path of the surface acoustic wave and which allows liquid to infiltrate into an inside thereof and a surface thereof and holds the liquid thereinside; and

a reaction-region thin film including: a surface that holds the liquid; a specified area having a surface area defined by a portion on which the porous base member overlaps the reaction-region thin film; and a detection region on which the piezo element overlaps the reaction-re ion thin film the specified area coming into contact with the liquid, the detection region coming into contact with the liquid.

2. The surface acoustic wave sensor according to claim 1 , further comprising a sealing structure that prevents the electrode from coming into contact with liquid.

3. The surface acoustic wave sensor according to claim 2 , wherein

the porous base member has a portion that does not overlap the detection region in a plan view.

4. The surface acoustic wave sensor according to claim 1 , wherein

the porous base member includes at least one of a reaction layer including a substance that reacts with a target and a filter layer that removes other than a target.

5. The surface acoustic wave sensor according to claim 2 , wherein

the electrode is constituted of two electrode pairs, and

the detection region has a short-circuiting reaction region that is electrically connected to one of the two electrode pairs and an open reaction region that is not electrically connected to the other of the two electrode pairs.

6. The surface acoustic wave sensor according to claim 2 , wherein

the electrode is constituted of a plurality of electrode pairs, and a separate reactant that reacts with a target in each electrode pair is provided on the porous base member that is provided between the electrode pairs.

7. The surface acoustic wave sensor according to claim 1 , wherein

the electrode is constituted of two electrode pairs, and

the porous base member comes into contact with the piezo element with a thin film interposed therebetween and is connected to the porous base member, and a portion thereof which comes into contact with each electrode is made of a hydrophobic base member.

8. The surface acoustic wave sensor according to claim 7 , wherein

the porous base member has a portion that does not come into contact with the piezo element.

9. The surface acoustic wave sensor according to claim 7 , wherein

the porous base member includes at least one of a reaction layer including a substance that reacts with a target and a filter layer that removes other than a target.

10. The surface acoustic wave sensor according to claim 7 , wherein

the piezo element includes:

a first portion having a region that is not electrically connected to the electrode; and

a second portion having a thin film that is electrically connected to the electrode.

11. The surface acoustic wave sensor according to claim 7 , wherein

the electrode is constituted of a plurality of electrode pairs, and a reactant that reacts with a target in each electrode pair is provided on the porous base member that is provided between the electrode pairs.

12. The surface acoustic wave sensor according to claim 7 , further comprising:

a detection region which is disposed at a propagation path of the surface acoustic wave, into which liquid serving as an analyte is introduced, wherein

the porous base member comes into contact with the detection region, and

liquid infiltrates into the porous base member due to a capillary phenomenon.

13. The surface acoustic wave sensor according to claim 12 , wherein

the porous base member allows liquid to infiltrate thereinto due to a capillary phenomenon in a propagation direction of the surface acoustic wave.

14. The surface acoustic wave sensor according to claim 12 , wherein

separate reactants which react with a target are formed and dispersed in directions in which the solution infiltrates into the porous base member.

15. The surface acoustic wave sensor according to claim 12 , wherein

the porous base member includes a first region and a second region,

the first region and the second region are alternately formed in a propagation direction of the surface acoustic wave, and

an infiltration rate in the first region is greater than an infiltration rate in the second region.

16. The surface acoustic wave sensor according to claim 15 , wherein

in the porous base member, lengths in the propagation direction of the surface acoustic wave in a plurality of the first regions are different from each other.

17. The surface acoustic wave sensor according to claim 15 , wherein

in the porous base member, lengths in the propagation direction of the surface acoustic wave in a plurality of the second regions are different from each other.

18. The surface acoustic wave sensor according to claim 1 , wherein

two electrodes are provided, and the detection region has a short-circuiting reaction region that is electrically connected to one of the two electrodes and an open reaction region that is not electrically connected to the other of the two electrodes.

19. The surface acoustic wave sensor according to claim 1 , wherein

the porous base member allows liquid to infiltrate thereinto due to a capillary phenomenon in a propagation direction of the surface acoustic wave.

20. The surface acoustic wave sensor according to claim 1 , wherein

separate reactants which react with a target are formed and dispersed in directions in which the solution infiltrates into the porous base member.

21. The surface acoustic wave sensor according to claim 1 , wherein

the porous base member includes at least one of a reaction layer including a substance that reacts with a target and a filter layer that removes other than a target.

22. The surface acoustic wave sensor according to claim 1 , wherein

the porous base member has a portion that does not come into contact with the piezo element.

23. The surface acoustic wave sensor according to claim 1 , wherein

a plurality of electrodes are provided, and a reactant that reacts with a target is provided on the porous base member that is provided so as to correspond to each of the electrodes.

24. The surface acoustic wave sensor according to claim 1 , wherein

a plurality of electrodes are provided, and reactants that react with each other are provided on each porous base member.

25. The surface acoustic wave sensor according to claim 1 , wherein

two electrodes are provided, and the porous base member comes into contact with the piezo element with a thin film interposed therebetween, is connected to the porous base member, and has a portion that comes into contact with each electrode is formed of a hydrophobic base member.

26. The surface acoustic wave sensor according to claim 10 , wherein

the piezo element includes:

a first portion having a region that is not electrically connected to the electrode; and

a second portion having a thin film that is electrically connected to the electrode.

27. The surface acoustic wave sensor according to claim 1 , wherein

the porous base member includes a first region and a second region,

the first region and the second region are alternately formed in a propagation direction of the surface acoustic wave, and

an infiltration rate in the first region is greater than an infiltration rate in the second region.

28. The surface acoustic wave sensor according to claim 13 , wherein

in the porous base member, lengths in the propagation direction of the surface acoustic wave in a plurality of the first regions are different from each other.

29. The surface acoustic wave sensor according to claim 13 , wherein

in the porous base member, lengths in the propagation direction of the surface acoustic wave in a plurality of the second regions are different from each other.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 29, 2025
From: JAPAN RADIO CO., LTD.
To: TST BIOMEDICAL ELECTRONICS CO., LTD.
Reel/Frame 072718/0957 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 13, 2014
From: KOGAI, TAKASHI; YATSUDA, HIROMI
To: JAPAN RADIO CO., LTD.
Reel/Frame 033531/0089 →
Priority Claims (3)
JP 2011-240492 · Nov 1, 2011 · national
JP 2011-240493 · Nov 1, 2011 · national
JP 2011-281611 · Dec 22, 2011 · national
Continuity (1)
Related Publication 20140305221A1 · Oct 16, 2014