Dicing-tape integrated film for backside of semiconductor and method of manufacturing semiconductor device
The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the transfer of the coloring agent contained in a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape onto the dicing tape. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, the film for the backside of a flip-chip semiconductor contains a coloring agent, and the solubility of the coloring agent to toluene at 23° C. is 2 g/100 ml or less.
1. A dicing-tape integrated film for a backside of a semiconductor having
a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and
a film for a backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, wherein
the film for the backside of a flip-chip semiconductor contains a coloring agent,
the solubility of the coloring agent to toluene at 23° C. is 2 g/100 ml or less, and
a difference between surface free energy E1 of the film for the backside of a flip-chip semiconductor and surface free energy E2 of the pressure-sensitive adhesive layer (E1-E2) is 10 mJ/m 2 or more.
2. The dicing-tape integrated film for the backside of a semiconductor according to claim 1 , wherein
the coloring agent has an anthraquinone skeleton.
3. A method of manufacturing a semiconductor device using the dicing-tape integrated film for the backside of a semiconductor according to claim 1 having
a step A of pasting a semiconductor wafer on a film for the backside of a flip-chip semiconductor in the dicing-tape integrated film for the backside of a semiconductor,
a step B of performing laser marking to the film for the backside of a flip-chip semiconductor from the dicing tape side after the step A,
a step C of dicing the semiconductor wafer to form a semiconductor element,
a step D of peeling the semiconductor element from the pressure-sensitive adhesive layer together with the film for the backside of a flip-chip semiconductor, and
a step E of flip-chip bonding the semiconductor element on an adherend.
4. A semiconductor device manufactured using the dicing-tape integrated film for the backside of a semiconductor according to claim 1 .