IP Library › Granted Patent US 9,685,217
Granted Patent B2
US 9,685,217 · App. 13/947,826 · Granted Jun 20, 2017

Memory device with over-refresh and method thereof

Inventors: Sergiy Romanovskyy (Ottawa, CA); Cormac Michael Oconnell (Ontario, CA)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
G11C11/406G06F11/106G06F11/1008G06F11/1048G11C2211/4061
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Quick Facts
Patent No.
US 9,685,217
App. No.
13/947,826
Granted
Jun 20, 2017
Kind
B2
Abstract

In a method, error detection and correction is performed on output data from a memory cell of a memory device to generate a result of error detection and correction. The memory cell is determined as a weak cell by determining a number of times of data retention failures of the memory cell based on the result of the error detection and correction. In a refreshing cycle, normal cells and the weak cell are refreshed and the weak cell is additionally refreshed at least once.

Claims (61)

1. A method, comprising:

performing error detection and correction on output data from a memory cell of a memory device to generate a result of error detection and correction;

determining the memory cell as a weak cell in response to a predetermined number of times of data retention failures of the memory cell based on the result of the error detection and correction;

in a first clock cycle, reading data stored in the weak cell based on a first address of the weak cell provided by a system controller;

performing error detection and correction on the data to obtain error corrected data;

in a second clock cycle, writing the error corrected data into the weak cell based on the first address; and

in a refreshing cycle,

refreshing normal cells and the weak cell of the memory device based on a plurality of corresponding second addresses of the normal cells and the weak cell provided by a refresh controller; and

additionally refreshing the weak cell at least once based on a third address of the weak cell provided by the refresh controller.

2. The method according to claim 1 , wherein

the second clock cycle is consecutive to the first clock cycle.

3. The method according to claim 2 , further comprising:

in one of the first clock cycle and the second clock cycle, extracting the first address to obtain the third address.

4. The method according to claim 1 , wherein

the second clock cycle and the first clock cycle are separated in time.

5. The method according to claim 4 , further comprising:

in the second clock cycle, extracting the first address to obtain the third address.

6. The method according to claim 1 , wherein in the refreshing cycle, refreshing the normal cells and the weak cell and additionally refreshing the weak cell comprise:

based on a plurality of address portions in the plurality of second addresses, portion-by-portion, refreshing cells in each address portion along with refreshing the weak cell.

7. A system, comprising:

a memory block comprising normal cells and a weak cell;

a system controller;

an error correction code (ECC) capability; and

a refresh controller;

the system controller being configured to provide a first address of the weak cell;

the memory block being configured to read data stored in the weak cell in a first clock cycle based on the first address;

the ECC capability being configured to perform error detection and correction on the data to obtain error corrected data;

the memory block being further configured to write the error corrected data into the weak cell in a second clock cycle based on the first address; and

the refresh controller being configured to provide a plurality of corresponding second addresses of the normal cells and the weak cell based on which the normal cells and the weak cell are refreshed once in a refreshing cycle, and to provide a third address of the weak cell based on which the weak cell is additionally refreshed at least once in the refreshing cycle.

8. The system according to claim 7 , wherein

the second clock cycle is consecutive to the first clock cycle.

9. The system according to claim 8 , wherein

the refresh controller comprises an address-extracting device configured to extract the first address in response to an assertion of a signal; and

the signal is asserted in the first clock cycle or the second clock cycle.

10. The system according to claim 7 , wherein

the second clock cycle and the first clock cycle are separated in time.

11. The system according to claim 10 , wherein

the refresh controller comprises an address-extracting device configured to extract the first address in response to an assertion of a signal; and

the signal is asserted in the second clock cycle.

12. The system according to claim 7 , wherein the refresh controller further comprises:

a refresh address counter configured to output the plurality of second addresses in the refreshing cycle;

an address-extracting device configured to extract the first address to obtain the third address;

a multiplexer configured to select one address of the plurality of second addresses from the refresh address counter or the third address from the address-extracting device for refreshing,

wherein

the refresh controller controls the multiplexer and the refresh address counter such that the multiplexer selects the address-extracting device at least once in the refreshing cycle.

13. The system according to claim 12 , wherein the refresh controller is configured to control the refresh address counter and the multiplexer such that based on a plurality of address portions in the plurality of second addresses, portion-by-portion, the multiplexer selects the refresh address counter to output addresses of each address portion, and selects the address-extracting device to output the third address.

14. A method, comprising:

in a first clock cycle, reading data stored in a weak cell of a memory device based on a first address of the weak cell provided by a system controller;

performing error detection and correction on the data to obtain error corrected data;

in a second clock cycle, writing the error corrected data into the weak cell based on the first address; and

in a refreshing cycle,

refreshing normal cells and the weak cell of the memory device based on a plurality of corresponding second addresses of the normal cells and the weak cell provided by a refresh controller; and

additionally refreshing the weak cell at least once based on a third address of the weak cell provided by the refresh controller.

15. The method according to claim 14 , wherein

the second clock cycle is consecutive to the first clock cycle.

16. The method according to claim 15 , further comprising:

in one of the first clock cycle and the second clock cycle, extracting the first address to obtain the third address.

17. The method according to claim 14 , wherein

the second clock cycle and the first clock cycle are separated in time.

18. The method according to claim 17 , further comprising:

in the second clock cycle, extracting the first address to obtain the third address.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 22, 2013
From: ROMANOVSKYY, SERGIY; OCONNELL, CORMAC MICHAEL
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Reel/Frame 030850/0155 →
Continuity (1)
Related Publication 20150026537A1 · Jan 22, 2015