IP Library › Granted Patent US 9,685,277
Granted Patent B2
US 9,685,277 · App. 15/011,857 · Granted Jun 20, 2017

Electrode

Inventors: Satoshi Murakami (Kanagawa, JP); Kazutaka Kuriki (Kanagawa, JP); Mikio Yukawa (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., LTD.
H01G11/24C23C16/24H01G11/30H01G11/46H01M4/0428H01M4/134H01M4/1395H01M4/48H01M4/52H01M4/661H01M10/0525H01M2220/20H01M2220/30Y02E60/122Y02E60/13Y02P70/54Y02T10/7022Y10T29/417Y10T29/49115
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,685,277
App. No.
15/011,857
Granted
Jun 20, 2017
Kind
B2
Abstract

An electrode which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur are provided. The electrode includes an active material layer including a first protrusion, a second protrusion and a continuous active material film, a metal oxide layer, and a continuous mixed layer. The first protrusion, the second protrusion and the continuous active material film includes silicon. The metal oxide layer includes oxygen and a metal element which is capable of forming silicide by reacting with silicon. The continuous mixed layer includes silicon and the metal element.

Claims (42)

1. An electrode comprising:

an active material layer comprising a first protrusion, a second protrusion and a continuous active material film;

a continuous mixed layer comprising silicon and a metal element; and

a metal oxide layer comprising the metal element and oxygen,

wherein the metal element is capable of forming silicide by reacting with silicon,

wherein each of the first protrusion and the second protrusion comprises an active material comprising silicon,

wherein the continuous active material film is in direct contact with the first protrusion and the second protrusion,

wherein the metal oxide layer is in direct contact with the continuous active material film, and

wherein the continuous mixed layer is in direct contact with the metal oxide layer.

2. The electrode according to claim 1 , wherein the first protrusion comprises a bending portion or a branching portion.

3. The electrode according to claim 2 , wherein the bending portion or the branching portion is in contact with the second protrusion.

4. The electrode according to claim 1 , wherein the active material is silicon.

5. The electrode according to claim 1 , wherein the first protrusion has a columnar shape or a needle shape.

6. The electrode according to claim 1 , wherein a direction of an axis of the first protrusion is different from a direction of an axis of the second protrusion.

7. The electrode according to claim 1 , wherein the continuous mixed layer comprises the silicide.

8. The electrode according to claim 1 , wherein the metal element is one selected from the group consisting of zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, cobalt and nickel.

9. The electrode according to claim 1 ,

wherein a diameter of the first protrusion is greater than or equal to 500 nm and less than or equal to 3 μm, and

wherein a length of an axis of the first protrusion is greater than or equal to 0.5 μm and less than or equal to 1000 μm.

10. The electrode according to claim 1 , wherein each of the first protrusion and the second protrusion comprises a crystalline silicon.

11. An energy storage device comprising the electrode according to claim 1 .

12. An electrode comprising:

an active material layer comprising a first protrusion, a second protrusion and a continuous active material film;

a continuous mixed layer comprising silicon and a metal element; and

a metal oxide layer comprising the metal element and oxygen,

wherein the metal element is capable of forming silicide by reacting with silicon,

wherein the continuous active material film comprises silicon,

wherein a material of the continuous active material film and a material of the continuous mixed layer are different from each other,

wherein each of the first protrusion and the second protrusion comprises an active material comprising silicon,

wherein the continuous active material film is in direct contact with the first protrusion and the second protrusion,

wherein the metal oxide layer is in direct contact with the continuous active material film, and

wherein the continuous mixed layer is in direct contact with the metal oxide layer.

13. The electrode according to claim 12 , wherein the first protrusion comprises a bending portion or a branching portion.

14. The electrode according to claim 13 , wherein the first protrusion is in contact with the second protrusion.

15. The electrode according to claim 12 , wherein the first protrusion has a columnar shape or a needle shape.

16. The electrode according to claim 12 , wherein the continuous mixed layer comprises the silicide.

17. The electrode according to claim 12 , wherein the metal element is one selected from the group consisting of zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, cobalt and nickel.

18. The electrode according to claim 12 ,

wherein a diameter of the first protrusion is greater than or equal to 500 nm and less than or equal to 3 μm, and

wherein a length of an axis of the first protrusion is greater than or equal to 0.5 μm and less than or equal to 1000 μm.

19. The electrode according to claim 12 , wherein each of the first protrusion and the second protrusion comprises a crystalline silicon.

20. An energy storage device comprising the electrode according to claim 12 .

Priority Claims (1)
JP 2010-126514 · Jun 2, 2010 · national
Continuity (2)
Continuation 13111079 · May 19, 2011
Related Publication 20160163470A1 · Jun 9, 2016