Circuit system
A semiconductor device with a transistor having favorable electrical characteristics is provided. The semiconductor device has a memory circuit and a circuit that are over the same substrate. The memory circuit includes a capacitor, a first transistor, and a second transistor. A gate of the first transistor is electrically connected to the capacitor and one of a source and a drain of the second transistor. The circuit includes a third transistor and a fourth transistor that are electrically connected to each other in series. The first transistor and the third transistor each include an active layer including silicon, and the second transistor and the fourth transistor each include an active layer including an oxide semiconductor.
1. A semiconductor device comprising:
a capacitor; and
a transistor electrically connected to the capacitor,
wherein electrostatic capacitance of the capacitor is larger than or equal to 0.1 fF and less than 10 fF,
wherein the transistor comprises an oxide semiconductor film, and
wherein writing time of the semiconductor device is longer than or equal to 0.1 nsec and shorter than 5 nsec in operation at room temperature.
2. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film comprises crystal parts aligned in a c-axis direction.
3. A semiconductor device comprising:
a memory circuit over a substrate, the memory circuit comprising a capacitor, a first transistor, and a second transistor; and
a circuit over the substrate, the circuit comprising a third transistor and a fourth transistor,
wherein a gate of the first transistor is electrically connected to the capacitor and one of a source and a drain of the second transistor,
wherein the third transistor and the fourth transistor are electrically connected to each other in series,
wherein the first transistor and the third transistor each comprise an active layer comprising silicon, and
wherein the second transistor and the fourth transistor each comprise an active layer of an oxide semiconductor film.
4. The semiconductor device according to claim 3 ,
wherein the first transistor and the third transistor are p-channel transistors.
5. The semiconductor device according to claim 3 ,
wherein the second transistor has a region in which a channel length is larger than or equal to 1 nm and less than 100 nm, and
wherein the fourth transistor has a region in which a channel length is larger than or equal to 1 nm and less than 100 nm.
6. The semiconductor device according to claim 3 ,
wherein the second transistor has a region in which a channel length is larger than or equal to 5 nm and less than 60 nm, and
wherein the fourth transistor has a region in which a channel length is larger than or equal to 5 nm and less than 60 nm.
7. The semiconductor device according to claim 3 ,
wherein the first transistor, the second transistor, the third transistor, the fourth transistor, and the capacitor are three-dimensionally arranged.
8. The semiconductor device according to claim 3 ,
wherein electrostatic capacitance of the capacitor is larger than or equal to 0.1 fF and less than 10 fF.
9. The semiconductor device according to claim 3 ,
wherein writing time of the memory circuit is longer than or equal to 0.1 nsec and shorter than 5 nsec.
10. The semiconductor device according to claim 3 ,
wherein the oxide semiconductor film contains oxygen, In, Zn, and one of Ti, Ga, Y, Zr, La, Ce, Nd, and Hf.
11. The semiconductor device according to claim 3 ,
wherein the oxide semiconductor film comprises crystal parts.
12. The semiconductor device according to claim 3 ,
wherein the oxide semiconductor film comprises crystal parts aligned in a c-axis direction.
13. A semiconductor device comprising:
a memory circuit over a substrate, the memory circuit comprising a capacitor, a first transistor, and a second transistor; and
a circuit over the substrate, the circuit comprising a third transistor and a fourth transistor,
wherein a gate of the first transistor is electrically connected to the capacitor and one of a source and a drain of the second transistor,
wherein the third transistor and the fourth transistor are electrically connected to each other in series, and
wherein the first transistor, the second transistor, the third transistor, and the fourth transistor each comprise an active layer of an oxide semiconductor film.
14. The semiconductor device according to claim 13 ,
wherein the first transistor, the second transistor, the third transistor, and the fourth transistor each have a region in which a channel length is larger than or equal to 1 nm and less than 100 nm.
15. The semiconductor device according to claim 13 ,
wherein the first transistor, the second transistor, the third transistor, and the fourth transistor each have a region in which a channel length is larger than or equal to 5 nm and less than 60 nm.
16. The semiconductor device according to claim 13 ,
wherein the first transistor, the second transistor, the third transistor, the fourth transistor, and the capacitor are three-dimensionally arranged.
17. The semiconductor device according to claim 13 ,
wherein electrostatic capacitance of the capacitor is larger than or equal to 0.1 fF and less than 10 fF.
18. The semiconductor device according to claim 13 ,
wherein writing time of the memory circuit is longer than or equal to 0.1 nsec and shorter than 5 nsec.
19. The semiconductor device according to claim 13 ,
wherein the oxide semiconductor film contains oxygen, In, Zn, and one of Ti, Ga, Y, Zr, La, Ce, Nd, and Hf.
20. The semiconductor device according to claim 13 ,
wherein the oxide semiconductor film comprises crystal parts.
21. The semiconductor device according to claim 13 ,
wherein the oxide semiconductor film comprises crystal parts aligned in a c-axis direction.