Power semiconductor module and power conversion device
A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; first and second positive electrode terminals, first and second negative electrode terminals, and first and second AC terminals. Further, there are first and second wiring patterns that connect the self-arc-extinguishing type semiconductor elements to the DC and AC terminals. The outline of the power semiconductor module has a substantially quadrangular surface.
1. A power semiconductor module, comprising:
a first set of an upper arm and a lower arm which includes a positive switching element and a negative switching element which are series-connected to each other, the positive switching element having a plurality of self-arc extinguishing type semiconductor elements parallel-connected to each other, the negative switching element having a plurality of self-arc extinguishing type semiconductor elements parallel-connected to each other;
a second set of an upper arm and a lower arm which includes a positive switching element and a negative switching element which are series-connected to each other, the positive switching element having a plurality of self-arc extinguishing type semiconductor elements parallel-connected to each other, the negative switching element having a plurality of self-arc extinguishing type semiconductor elements parallel-connected to each other, the second set of an upper arm and a lower arm being connected in parallel to the first set of an upper arm and a lower arm;
a first positive electrode side DC terminal connected to the positive switching element of the first set of an upper arm and a lower arm;
a second positive electrode side DC terminal connected to the positive switching element of the second set of an upper arm and a lower arm;
a first negative electrode side DC terminal connected to the negative switching element of the first set of an upper arm and a lower arm;
a second negative electrode side DC terminal connected to the negative switching element of the second set of an upper arm and a lower arm;
a first AC terminal connected to both of the positive switching element and the negative switching element of the first set of an upper arm and a lower arm;
a second AC terminal connected to both of the positive switching element and the negative switching element of the second set of an upper arm and a lower arm;
a first wiring pattern which connects the first set of an upper arm and a lower arm to the first positive electrode side DC terminal, the first negative electrode side DC terminal, and the first AC terminal; and
a second wiring pattern which connects the second set of an upper arm and a lower arm to the second positive electrode side DC terminal, the second negative electrode side DC terminal, and the second AC terminal, wherein
an outline of the power semiconductor module has a substantially quadrangular surface;
the first and second positive electrode side DC terminals and the first and second negative electrode side DC terminals are disposed at a side of the substantially quadrangular surface;
the first and second AC terminals are disposed at a side which is opposite to the side; and
the first positive electrode side DC terminal and the first negative electrode side DC terminal are disposed in mirror symmetry with the second positive electrode side DC terminal and the second negative electrode side DC terminal.
2. The power semiconductor module in claim 1 , wherein
the first AC terminal is disposed in mirror symmetry with the second AC terminal based on a symmetrical axis; and
the first wiring pattern is disposed in mirror symmetry with the second wiring pattern based on the same symmetrical axis for the AC patterns.
3. The power semiconductor module in claim 1 , wherein
the first positive electrode side DC terminal and the first negative electrode side DC terminal are disposed in mirror symmetry with the second positive electrode side DC terminal and the second negative electrode side DC terminal based on a right-angle axis with the side of the substantially quadrangular surface where the positive electrode side DC terminals and the negative electrode side DC terminals are disposed.
4. The power semiconductor module in claim 1 , wherein
the first wiring pattern is disposed in mirror symmetry with the second wiring pattern based on a right-angle axis with the side of the substantially quadrangular surface where the positive electrode side DC terminals and the negative electrode side DC terminals are disposed.
5. The power semiconductor module in claim 1 , wherein
the first wiring pattern has a first negative electrode terminal pattern portion which connects the first set of an upper arm and a lower arm to the first negative electrode side DC terminal;
the second wiring pattern has a second negative electrode terminal pattern portion which connects the second set of an upper arm and a lower arm to the second negative electrode side DC terminal; and
the first negative electrode terminal pattern portion is connected to the second negative electrode terminal pattern portion in the power semiconductor module.
6. The power semiconductor module in claim 1 , wherein
the first wiring pattern has a first control wiring pattern portion connected to control electrodes of the self-arc-extinguishing type semiconductor elements of the first set of an upper arm and a lower arm;
the second wiring pattern has a second control wiring pattern portion connected to control electrodes of the self-arc-extinguishing type semiconductor elements of the second set of an upper arm and a lower arm; and
a relationship between a direction of gate charge/discharge current, flowing through the control wiring pattern portion, of the self-arc-extinguishing type semiconductor element and a direction of principal current flowing through the self-arc-extinguishing type semiconductor element is unified in the first and second set of an upper arm and a lower arms.
7. The power semiconductor module in claim 1 , wherein
the first AC terminal and the second AC terminal are electrically connected each other at the same electric potential.
8. The power semiconductor module in claim 1 , wherein
a distance between the first positive electrode side DC terminal and the first negative electrode side DC terminal is shorter than a distance between the first positive electrode side DC terminal and the first AC terminal.
9. The power semiconductor module in claim 1 , wherein
a distance between the first positive electrode side DC terminal and the first negative electrode side DC terminal is shorter than a distance between the first negative electrode side DC terminal and the first AC terminal.
10. The power semiconductor module in claim 1 , wherein
the first positive electrode side DC terminal and the first wiring pattern are connected at a first point;
the first negative electrode side DC terminal and the first wiring pattern are connected to at a second point;
the first AC terminal and the first wiring pattern are connected at a third point; and
a distance between the first point and the second point is shorter than a distance between the second point and the third point.
11. The power semiconductor module in claim 1 , wherein
the first positive electrode side DC terminal and the first wiring pattern are connected at a first point;
the first negative electrode side DC terminal and the first wiring pattern are connected to at a second point;
the first AC terminal and the first wiring pattern are connected at a third point; and
a distance between the first point and the second point is shorter than a distance between the first point and the third point.
12. The power semiconductor module in claim 1 , wherein
the self-arc-extinguishing type semiconductor elements include any one of silicon carbide, gallium nitride based material, and diamond that have a wider bandgap than silicon.
13. A power semiconductor module, comprising:
a first set of an upper arm and a lower arm which includes a positive switching element and a negative switching element which are series-connected to each other, the positive switching element having a plurality of self-arc extinguishing type semiconductor elements parallel-connected to each other, the negative switching element having a plurality of self-arc extinguishing type semiconductor elements parallel-connected to each other;
a second set of an upper arm and a lower arm which includes a positive switching element and a negative switching element which are series-connected to each other, the positive switching element having a plurality of self-arc extinguishing type semiconductor elements parallel-connected to each other, the negative switching element having a plurality of self-arc extinguishing type semiconductor elements parallel-connected to each other, the second set of an upper arm and a lower arm being connected in parallel to the first set of an upper arm and a lower arm;
a first positive electrode side DC terminal connected to the positive switching element of the first set of an upper arm and a lower arm;
a second positive electrode side DC terminal connected to the positive switching element of the second set of an upper arm and a lower arm;
a first negative electrode side DC terminal connected to the negative switching element of the first set of an upper arm and a lower arm;
a second negative electrode side DC terminal connected to the negative switching element of the second set of an upper arm and a lower arm;
a first AC terminal connected to both of the positive switching element and the negative switching element of the first set of an upper arm and a lower arm;
a second AC terminal connected to both of the positive switching element and the negative switching element of the second set of an upper arm and a lower arm;
a first wiring pattern which connects the first set of an upper arm and a lower arm to the first positive electrode side DC terminal, the first negative electrode side DC terminal, and the first AC terminal; and
a second wiring pattern which connects the second set of an upper arm and a lower arm to the second positive electrode side DC terminal, the second negative electrode side DC terminal, and the second AC terminal, wherein
an outline of the power semiconductor module has a substantially quadrangular surface;
the first and second positive electrode side DC terminals, the first and second negative electrode side DC terminals, and the first and second AC terminals are disposed within the substantially quadrangular surface in an order of the positive electrode side DC terminal, the negative electrode side DC terminal, and the AC terminal; and
the first positive electrode side DC terminal and the first negative electrode side DC terminal are disposed in mirror symmetry with the second positive electrode side DC terminal and the second negative electrode side DC terminal.
14. The power semiconductor module in claim 13 , wherein
the first AC terminal is disposed in mirror symmetry with the second AC terminal based on a symmetrical axis; and
the first wiring pattern is disposed in mirror symmetry with the second wiring pattern based on the same symmetrical axis for the AC patterns.
15. The power semiconductor module in claim 13 , wherein
the first AC terminal and the second AC terminal are electrically connected each other at the same electric potential.
16. The power semiconductor module in claim 13 , wherein
a distance between the first positive electrode side DC terminal and the first negative electrode side DC terminal is shorter than a distance between the first positive electrode side DC terminal and the first AC terminal.
17. The power semiconductor module in claim 13 , wherein
a distance between the first positive electrode side DC terminal and the first negative electrode side DC terminal is shorter than a distance between the first negative electrode side DC terminal and the first AC terminal.
18. The power semiconductor module in claim 13 , wherein
the first positive electrode side DC terminal and the first wiring pattern are connected at a first point;
the first negative electrode side DC terminal and the first wiring pattern are connected to at a second point;
the first AC terminal and the first wiring pattern are connected at a third point; and
a distance between the first point and the second point is shorter than a distance between the second point and the third point.
19. The power semiconductor module in claim 13 , wherein
the first positive electrode side DC terminal and the first wiring pattern are connected at a first point;
the first negative electrode side DC terminal and the first wiring pattern are connected to at a second point;
the first AC terminal and the first wiring pattern are connected at a third point; and
a distance between the first point and the second point is shorter than a distance between the first point and the third point.
20. The power semiconductor module in claim 13 , wherein
the self-arc-extinguishing type semiconductor elements include any one of silicon carbide, gallium nitride based material, and diamond that have a wider bandgap than silicon.