Programmable devices with current-facilitated migration and fabrication methods
Programmable devices and fabrication methods thereof are presented. The programmable devices include, for instance, a first electrode and a second electrode electrically connected by a link portion. The link portion includes one material of a metal material or a semiconductor material and the first and second electrodes includes the other material of the metal material or the semiconductor material. For example, the link portion facilitates programming the programmable device by applying a programming current between the first electrode and the second electrode to facilitate migration of the one material of the link portion towards at least one of the first or second electrodes. In one embodiment, the programming current is configured to heat the link portion to facilitate the migration of the one material of the link portion towards the at least one of the first or second electrodes.
1. A structure comprising:
a programmable device, the programmable device comprising:
a first electrode and a second electrode electrically connected by a link portion, the link portion consisting of one material either of a metal or a semiconductor and the first and second electrodes consisting of the other material either of the metal or the semiconductor, wherein the link portion facilitates programming the programmable device by applying a programming current between the first electrode and the second electrode to facilitate migration of the one material of the link portion towards at least one of the first or second electrodes; and
wherein the programming current facilitates increasing an electrical resistance of the link portion of the programmable device.
2. The structure of claim 1 , wherein the programming current is configured to heat the link portion to facilitate the migration of the one material of the link portion towards the at least one of the first or second electrodes.
3. The structure of claim 1 , wherein the programming current facilitates a reaction of the metal and the semiconductor to form a semiconductor-metal alloy.
4. The structure of claim 1 , wherein the programming current facilitates open-circuiting the programmable device.
5. The structure of claim 1 , wherein the link portion comprises at least one nanowire, the at least one nanowire consisting of the one material.
6. The structure of claim 1 , wherein the link portion has a certain thickness, the certain thickness of the link portion being selected to facilitate programming of the programmable device with the programming current.
7. The structure of claim 1 , wherein the link portion consists of the metal and the first and second electrodes consists of the semiconductor, and the programming current facilitates migration of the semiconductor of the at least one of the first or second electrodes into the metal of the link portion.
8. The structure of claim 1 , wherein the link portion consists of the metal and the first and second electrodes consists of the semiconductor, and the programming current facilitates migration of the metal of the link portion into the semiconductor of the at least one of the first or second electrodes.
9. The structure of claim 1 , further comprising an insulating layer, the insulating layer being disposed above or below the link portion, wherein the insulating layer facilitates heating of the link portion by the programming current.
10. The structure of claim 9 , wherein the insulating layer inhibits heating of other portions of the structure by the programming current.
11. A method comprising:
fabricating a programmable device, the fabricating comprising:
forming a first electrode and a second electrode above a substrate;
providing a link portion above the substrate and electrically connecting the first electrode and the second electrode, the link portion consisting of one material either of a metal or a semiconductor and the first and second electrodes consisting of the other material either of the metal or the semiconductor material, wherein the link portion facilitates programming the programmable device by applying a programming current between the first electrode and the second electrode to facilitate migration of the one material of the link portion towards at least one of the first or second electrodes; and
wherein the programming current facilitates increasing an electrical resistance of the link portion of the programmable device.
12. The method of claim 11 , further comprising annealing the first electrode, the second electrode, and the link portion to facilitate formation of electrical junctions between the first electrode and the link portion, and the second electrode and the link portion.
13. The method of claim 11 , further comprising providing an insulating layer above or below the link portion, wherein the insulating layer facilitates heating of the link portion by the programming current.
14. The method of claim 13 , wherein the insulating layer inhibits heating of other portions of the structure by the programming current.
15. The method of claim 11 , wherein the programming current is configured to heat the link portion to facilitate the migration of the one material of the link portion towards the at least one of the first or second electrodes.
16. The method of claim 11 , wherein the programming current facilitates a reaction of the metal and the semiconductor to form a semiconductor-metal alloy.
17. The method of claim 11 , wherein the programming current facilitates open-circuiting the programmable device.
18. The method of claim 11 , further comprising programming the programmable device, the programming comprising applying the programming current from the first electrode through the link portion to the second electrode to migrate the one material of the link portion towards the at least one of the first or second electrodes.