Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films
Vanadium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Vanadium-containing films on one or more substrates via vapor deposition processes using the Vanadium-containing film forming compositions.
1. A Vanadium-containing film forming composition comprising a precursor having the formula
wherein each R, R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , and R 7 are independently H, an alkyl group, or R′ 3 Si, with each R′ independently being H or an alkyl group.
2. The Vanadium-containing film forming composition of claim 1 , wherein R is tBu and R 1 -R 5 is H.
3. The Vanadium-containing film forming composition of claim 1 , wherein R is tBu, R 1 is Me, and R 2 -R 5 is H.
4. The Vanadium-containing film forming composition of claim 1 , wherein R is tBu, R 1 is Et, and R 2 -R 5 is H.
5. The Vanadium-containing film forming composition of claim 1 , wherein R is tBu, R 1 is iPr, and R 2 -R 5 is H.
6. The Vanadium-containing film forming composition of claim 5 , wherein R is tBu, R 1 is tBu, and R 2 -R 5 is H.
7. The Vanadium-containing film forming composition of claim 1 , wherein R is tBu, R 1 is SiMe 3 , and R 2 -R 5 is H.
8. The Vanadium-containing film forming composition of claim 1 , wherein R is tBu; R 1 , R 3 , and R 5 are iPr; and R 2 and R 4 are H.
9. The Vanadium-containing film forming composition of claim 1 , wherein R 1 -R 5 are H and R 6 and R 7 are tAmyl.
10. The Vanadium-containing film forming composition of claim 9 , wherein R is tBu.
11. A method of forming a Vanadium-containing film, the method comprising introducing into a reactor having a substrate therein a vapor of the Vanadium-containing film forming composition of claim 1 ; and depositing at least part of the precursor onto the substrate.
12. The method of claim 11 , further comprising introducing a reactant into the reactor.
13. The method of claim 12 , wherein the reactant is selected from the group consisting of H 2 , H 2 CO, N 2 H 4 , NH 3 , SiH 4 , Si 2 H 6 , Si 3 H 8 , SiH 2 Me 2 , SiH 2 Et 2 , N(SiH 3 ) 3 , hydrogen radicals thereof, and mixtures thereof.
14. The method of claim 12 , wherein the reactant is selected from the group consisting of O 2 , O 3 , H 2 O, H 2 O 2 , NO, N 2 O, NO 2 , oxygen radicals thereof, and mixtures thereof.
15. The method of claim 12 , wherein the Vanadium-containing film forming composition and the reactant are introduced into the reactor simultaneously and the reactor is configured for chemical vapor deposition.
16. The method of claim 12 , wherein the Vanadium-containing film forming composition and the reactant are introduced into the chamber sequentially and the reactor is configured for atomic layer deposition.
17. The method of claim 11 , wherein the substrate is a dielectric layer.
18. The method of claim 17 , wherein the substrate is ZrO 2 and the Vanadium-containing film forming composition is used to form a DRAM capacitor.
19. The method of claim 12 , further comprising plasma treating the reactant.
20. The method of claim 12 , wherein the Vanadium-containing film forming precursor is VCp(=NtBu)(N(tAmyl)-CH—CH—N(tAmyl)) or V(MeCp)(=NtBu)(N(tBu)-CH—CH—N(tBu)) and the reactant is NH 3 or O 3 .