Microchip and film forming method for metal thin film of microchip
Disclosed herein are a microchip provided with a titanium oxide film between a glass substrate and a metal thin film; and a method for forming the metal thin film and the titanium oxide film on the glass substrate of the microchip. The microchip has a second microchip substrate that has the metal thin film inside a channel, and the titanium oxide film, which has a low extinction coefficient, is provided as a buffer layer between the substrate and the metal thin film such as a gold film.
1. A method of forming a metal thin film in a microchip including a substrate made of glass on which the metal thin film is formed, and a channel formed in a space including the metal thin film, the method comprising:
irradiating a surface of the substrate with light including vacuum ultraviolet light with a wavelength equal to or less than 200 nm under an ambient atmosphere containing oxygen and moisture;
immersing the substrate in titanium ion solution and forming a titanium oxide film having a rutile type structure and an anatase type structure being mixed on a vacuum ultraviolet light irradiated face of the substrate; and
depositing the metal thin film on the surface of the substrate on which the titanium oxide film is formed.
2. The method for forming a metal thin film in a microchip according to claim 1 , wherein the metal thin film is composed of any of gold (Au), platinum (Pt), rhodium (Rh), palladium (Pd), or palladium-platinum alloy (Pd—Pt alloy).