Methods and structures to prevent sidewall defects during selective epitaxy
Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (1) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.
1. A combined trench for growing a selective epitaxial buffer material, the combined trench comprising:
a first and a second shallow trench isolation (STI) region on a substrate surface, the first and second STI regions having first and second STI inner sidewalls defining first and second lower trench sidewalls of a lower trench, the lower trench having a bottom surface that is the substrate surface, the lower trench having a lower trench upper opening, wherein the first and second STI inner sidewalls form an inward angle of 55 degrees with respect to the substrate surface; and
a third and a fourth STI region on the first and second STI regions, the third and fourth STI regions having third and fourth STI inner sidewalls defining third and fourth upper trench sidewalls of an upper trench, the upper trench exposing the lower trench upper opening and the substrate surface; the upper trench having an upper trench lower surface above and completely surrounding the lower trench upper opening.
2. The combined trench of claim 1 , wherein the upper trench has a height at least 1.5 times a width and at least 1.5 times a length of the upper trench; and wherein the third and fourth STI inner sidewalls are perpendicular to the substrate surface.
3. The combined trench of claim 1 , further comprising:
a layer of crystal epitaxial material in the lower trench and in the upper trench, the crystal epitaxial material selectively epitaxially grown from the substrate surface but is not grown from STI top surfaces of the lower trench.
4. The combined trench of claim 3 , wherein the layer of crystal epitaxial material is a layer of buffer material and further comprising:
a device layer of device crystal epitaxial material on a top surface of the buffer material, the device crystal epitaxial material selectively epitaxially grown from the top surface of the buffer material.
5. The combined trench of claim 3 , wherein the epitaxial material has (111) crystal index sidewalls touching the first and second STI inner sidewalls; and wherein the epitaxial material has (110) crystal index vertical sidewalls touching the third and fourth STI inner sidewalls.
6. The combined trench of claim 1 , wherein the lower trench has a height at least 1.5 times a width and at least 1.5 times a length of the lower trench.
7. The combined trench of claim 1 , wherein the first and second STI inner sidewalls lean in towards each other to form the inward angle of 55 degrees as they extend upwards and away from the substrate surface.
8. A trench for growing a selective epitaxial buffer material, the trench comprising:
a first and a second shallow trench isolation (STI) region on a substrate surface, the first and second STI regions having first and second STI inner sidewalls defining a first and second lower trench sidewalls of a trench having a bottom surface that is the substrate surface;
the first and second lower trench sidewalls forming an inward angle of 55 degrees with respect to the substrate surface; and
a layer of crystal epitaxial material in the trench, the crystal epitaxial material selectively epitaxially grown from the substrate surface.
9. The trench of claim 8 , wherein the layer of crystal epitaxial material has (111) crystal index material sidewalls touching the first and second STI inner sidewalls.
10. The trench of claim 9 , wherein the layer of crystal epitaxial material is a layer of buffer material and further comprising:
a layer of device crystal epitaxial material on a top surface of the buffer material, the device crystal epitaxial material selectively epitaxially grown from the top surface of the buffer material.
11. The trench of claim 8 , wherein the upper trench has a height at least 1.5 times a width and at least 1.5 times a length of the upper trench.
12. The trench of claim 8 , wherein the lower trench has a height at least 1.5 times a width and at least 1.5 times a length of the lower trench.
13. The trench of claim 8 , wherein the first and second lower trench sidewalls lean in towards each other to form the inward angle of 55 degrees as they extend upwards and away from the substrate surface.
14. A system for computing comprising:
a microprocessor coupled to a memory, the microprocessor having at least one combined trench having:
a first and a second shallow trench isolation (STI) region on a substrate surface, the first and second STI regions having first and second STI inner sidewalls defining first and second lower trench sidewalls of a lower trench, the lower trench having a bottom surface that is the substrate surface, the lower trench having a lower trench upper opening;
a third and a fourth STI region on the first and second STI regions, the third and fourth STI regions having third and fourth STI inner sidewalls defining third and fourth upper trench sidewalls of an upper trench, the upper trench open to the lower trench upper opening and the substrate surface; the upper trench having an upper trench lower surface above and completely surrounding the lower trench upper opening, wherein the first and second STI inner sidewalls form an inward angle of 55 degrees with respect to the substrate surface;
a buffer layer of buffer crystal epitaxial material in the lower trench and in the upper trench, the buffer crystal epitaxial material selectively epitaxially grown from the substrate surface but not grown from STI top surfaces of the lower trench;
a device layer of device crystal epitaxial material on a top surface of the buffer material, the device crystal epitaxial material selectively epitaxially grown from the top surface of the buffer material; and
a plurality of devices formed in fins of the device material.
15. The system of claim 14 , wherein the upper trench has a height at least 1.5 times a width and at least 1.5 times a length of the upper trench; wherein the third and fourth STI inner sidewalls are perpendicular to the substrate surface; wherein the epitaxial material has (110) crystal index vertical sidewalls touching the third and fourth STI inner sidewalls; and wherein the epitaxial material has (111) crystal index sidewalls touching the first and second STI inner sidewalls.
16. The system of claim 14 , wherein the lower trench has a height at least 1.5 times a width and at least 1.5 times a length of the lower trench.
17. A system for computing comprising:
a microprocessor coupled to a memory, the microprocessor having at least one combined trench having:
a first and a second shallow trench isolation (STI) region on a substrate surface, the first and second STI regions having first and second STI inner sidewalls defining a first and second lower trench sidewalls of a trench having a bottom surface that is the substrate surface;
the first and second lower trench sidewalls forming an inward angle of 55 degrees with respect to the substrate surface; and
a layer of crystal epitaxial material in the trench, the crystal epitaxial material selectively epitaxially grown from the substrate surface.
18. The system of claim 17 , wherein the layer of crystal epitaxial material in the trench is a buffer layer of buffer crystal epitaxial material selectively epitaxially grown from the substrate surface but not grown from STI top surfaces of the lower trench; further comprising:
a device layer of device crystal epitaxial material on a top surface of the buffer material, the device crystal epitaxial material selectively epitaxially grown from the top surface of the buffer material; and
a plurality of devices formed in fins of the device material.
19. The system of claim 17 , wherein the lower trench has a height at least 1.5 times a width and at least 1.5 times a length of the lower trench.
20. The system of claim 17 , wherein the epitaxial material has (111) crystal index sidewalls touching the first and second STI inner sidewalls.