Semiconductor fin fabrication method and Fin FET device fabrication method
A semiconductor fin fabrication method includes: providing a substrate; selectively epitaxially growing a first mask layer in a predetermined zone on the substrate; selectively epitaxially growing a first epitaxial layer on the substrate by using the first mask layer as a mask; and removing the first mask layer and a part, under the first mask layer, of the substrate by using the first epitaxial layer as a mask and by using an anisotropic etching method, so as to form a fin under the first epitaxial layer. According to the foregoing solutions, a manner in which a selective epitaxial growth technology and an anisotropic etching technology are combined is used It can be ensured that a semiconductor fin and a surface of a gate oxidized layer are perpendicular to each other, roughness of a surface of the semiconductor fin is reduced, and a fin with a smooth side surface is formed.
1. A semiconductor fin fabrication method, comprising:
providing a substrate;
selectively epitaxially growing a first mask layer in a predetermined zone on the substrate, wherein selectively epitaxially growing the first mask layer further comprises selectively epitaxially growing the first mask layer using chlorine-containing silicon source gas at a temperature between 750° C. to 900° C.;
selectively epitaxially growing a first epitaxial layer on the substrate by using the first mask layer as a mask; and
removing the first mask layer and a part, under the first mask layer, of the substrate by using the first epitaxial layer as a mask and by using an anisotropic etching method, so as to form a fin under the first epitaxial layer.
2. The fabrication method according to claim 1 , further comprising:
removing the first epitaxial layer by means of etching.
3. The fabrication method according to claim 1 , further comprising:
performing rounding processing on a top of the fin by using a high-temperature oxidation method.
4. The fabrication method according to claim 1 , further comprising:
forming flank walls on two sides of the fin;
forming second mask layers on outer sides of the flank walls;
selectively epitaxially growing new fins on outer sides of the second mask layers; and
removing the fin, the flank walls, and the second mask layers by means of anisotropic etching, to expose the new fins.
5. The fabrication method according to claim 4 , wherein spacings between two adjacent new fins are equal.
6. The fabrication method according to claim 1 , further comprising:
forming a first oxidized layer in a zone, except the fin, on the substrate; and
oxidizing a part of the fin to form a second oxidized layer, wherein the second oxidized layer comes into contact with the substrate, and a height of the second oxidized layer is the same as a height of the first oxidized layer.
7. A Fin field-effect transistor (FET) device fabrication method, comprising:
providing a substrate;
selectively epitaxially growing a first mask layer in a predetermined zone on the substrate, wherein selectively epitaxially growing the first mask layer further comprises selectively epitaxially growing the first mask layer using chlorine-containing silicon source gas at a temperature between 750° C. to 900° C.;
selectively epitaxially growing a first epitaxial layer on the substrate by using the first mask layer as a mask;
removing the first mask layer and a part, under the first mask layer, of the substrate by using the first epitaxial layer as a mask and by using an anisotropic etching method, so as to form a fin under the first epitaxial layer;
forming a first oxidized layer in a zone, except the fin, on the substrate;
oxidizing a part of the fin to form a second oxidized layer, wherein the second oxidized layer comes into contact with the substrate, and a height of the second oxidized layer is the same as a height of the first oxidized layer;
performing rounding processing on top corners of the fin by using a high-temperature oxidation method;
forming lateral walls on two sides of the fin;
forming a gate strip intersecting with the fin;
forming side walls on two sides of the gate strip; and
performing ion injection by using the side walls as masks, to form a source/drain zone within the substrate.
8. The fabrication method according to claim 7 , wherein forming a gate strip intersecting with the fin comprises:
forming an epitaxial layer on a top of the fin, tops of the lateral walls, and a surface of the first oxidized layer;
removing an excess epitaxial layer by means of etching, to form the gate strip intersecting with the fin; or
forming a protective layer, along a length direction of the fin, from two sides to the middle of the substrate by using a selective epitaxial growth technology until a trench is formed in a middle location along the length direction of the fin;
forming the gate strip within the trench by means of deposition; and
removing the protective layer by means of etching, to expose the fin.
9. A Fin field-effect transistor (FET) device fabrication method, comprising:
providing a substrate;
selectively epitaxially growing a first mask layer in a predetermined zone on the substrate, wherein selectively epitaxially growing the first mask layer further comprises selectively epitaxially growing the first mask layer using chlorine-containing silicon source gas at a temperature between 750° C. to 900° C.;
selectively epitaxially growing a first epitaxial layer on the substrate by using the first mask layer as a mask;
removing the first mask layer and a part, under the first mask layer, of the substrate by using the first epitaxial layer as a mask and by using an anisotropic etching method, so as to form a fin under the first epitaxial layer;
forming a first oxidized layer in a zone, except the fin, on the substrate;
oxidizing a part of the fin to form a second oxidized layer, wherein the second oxidized layer comes into contact with the substrate, and a height of the second oxidized layer is the same as a height of the first oxidized layer;
depositing a pseudo gate layer on a top of the fin and a surface of the first oxidized layer;
removing an excess pseudo gate layer by means of etching, to form a pseudo gate strip intersecting with the fin;
forming side walls on two sides of the pseudo gate strip;
performing ion injection by using the side walls as masks, to form a source/drain zone within the substrate;
removing the pseudo gate strip; and
forming a gate strip on a gate oxidized layer between the side walls.
10. A Fin FET device fabrication method, comprising:
providing a substrate;
selectively epitaxially growing a first mask layer in a predetermined zone on the substrate, wherein selectively epitaxially growing the first mask layer further comprises selectively epitaxially growing the first mask layer using chlorine-containing silicon source gas at a temperature between 750° C. to 900° C.;
selectively epitaxially growing a first epitaxial layer on the substrate by using the first mask layer as a mask;
removing the first mask layer and a part, under the first mask layer, of the substrate by using the first epitaxial layer as a mask and by using an anisotropic etching method, so as to form a fin under the first epitaxial layer;
forming a first oxidized layer in a zone, except the fin, on the substrate;
oxidizing a part of the fin to form a second oxidized layer, wherein the second oxidized layer comes into contact with the substrate, and a height of the second oxidized layer is the same as a height of the first oxidized layer;
fabricating a gate electrode layer on a top of the fin and a surface of the first oxidized layer;
selectively epitaxially growing a protective layer in a predetermined zone on a surface of the gate electrode layer, wherein the gate electrode layer under the predetermined zone intersects with the fin;
removing the gate electrode layer by means of anisotropic etching and by using the protective layer as a mask, to expose the fin;
removing the protective layer by means of anisotropic etching;
forming side walls on two sides of the gate strip; and
performing ion injection by using the side walls as masks, to form a source/drain zone within the substrate.
11. A Fin FET device fabrication method, comprising:
providing a substrate;
selectively epitaxially growing a first mask layer in a predetermined zone on the substrate, wherein selectively epitaxially growing the first mask layer further comprises selectively epitaxially growing the first mask layer using chlorine-containing silicon source gas at a temperature between 750° C. to 900° C.;
selectively epitaxially growing a first epitaxial layer on the substrate by using the first mask layer as a mask;
removing the first mask layer and a part, under the first mask layer, of the substrate by using the first epitaxial layer as a mask and by using an anisotropic etching method, so as to form a fin under the first epitaxial layer;
forming a first oxidized layer in a zone, except the fin, on the substrate;
oxidizing a part of the fin to form a second oxidized layer, wherein the second oxidized layer comes into contact with the substrate, and a height of the second oxidized layer is the same as a height of the first oxidized layer;
depositing a protective layer on a top of the fin and a surface of the first oxidized layer;
removing the protective layer in a predetermined zone by means of anisotropic etching, wherein the predetermined zone is a zone in which a gate strip is located;
growing a gate electrode layer in the predetermined zone;
removing the protective layer on the top of the fin to expose the fin;
forming side walls on two sides of the gate strip; and
performing ion injection by using the side walls as masks, to form a source/drain zone within the substrate.