Granted Patent B2

US 9,698,306 · App. 14/979,334 · Granted Jul 4, 2017

Inventors: Alexei A. Erchak (Cambridge, MA); Elefterios Lidorikis (Ioannina, GR); Chiyan Luo (Great Neck, NY)

Assignee: Luminus Devices, Inc.

H01L33/30H01L33/20H01L33/22H01L33/46H01L33/0079H01L33/24H01L33/405H01L33/50H01L2933/0083

Abstract

Claims (10)

1. A light-emitting device, comprising:

a multi-layer stack comprising III-V semiconductor materials including a light-generating region and a first layer supported by the light-generating region,

wherein at least one of the layers in the multi-layer stack includes a surface having a dielectric function that varies spatially.

2. The light-emitting device of claim 1 , wherein the at least one III-V semiconductor material comprises GaN.

3. The light-emitting device of claim 1 , wherein the at least one gallium nitride semiconductor material comprises AlGaN.

4. The light-emitting device of claim 1 , further comprising electrical contacts configured to inject current into the light-emitting device.

5. The light-emitting device of claim 4 , wherein the electrical contacts are configured to vertically inject electrical current into the light-emitting device.

6. The light-emitting device of claim 1 , wherein the first layer comprises a semiconductor material.

7. The light-emitting device of claim 1 , wherein the surface of the first layer includes a portion that is parallel to a surface of the light-generating region.

8. The light-emitting device of claim 1 , wherein a surface of the first layer is configured so that at least 45% of a total amount of light generated by the light-generating region emerges via the surface of the first layer.

Assignments (1)

Continuity (16)