Additional etching to increase via contact area
An integrated circuit structure includes a dielectric layer, and a conductive line in the dielectric layer. The conductive line has a first top surface and a second top surface lower than the first top surface, and a sidewall connecting the first top surface to the second top surface. A via includes a portion overlying the second top surface of the conductive line. The via is electrically coupled to the conductive line through the second top surface and the sidewall of the conductive line.
1. A structure comprising:
a dielectric layer;
a conductive line in the dielectric layer, wherein the conductive line comprises a first top surface and a second top surface lower than the first top surface, and a sidewall connecting the first top surface to the second top surface;
a via with a portion overlying the second top surface of the conductive line, wherein the via is electrically coupled to the conductive line through the second top surface and the sidewall of the conductive line;
a first metal cap overlapping and contacting the first top surface;
a second metal cap comprising:
a first surface contacting the second top surface and the sidewall of the conductive line; and
a second surface contacting the via, wherein the first surface and the second surface are opposite to each other.
2. The structure of claim 1 , wherein the first top surface and the second top surface have a height difference, the conductive line has a height, and wherein a ratio of the height difference to the height is greater than about 0.1.
3. The structure of claim 1 , wherein the first top surface of the conductive line is substantially planar, the second top surface of the conductive line is substantially planar, and the sidewall of the conductive line is substantially straight.
4. The structure of claim 1 , wherein the second top surface and the sidewall of the conductive line are continuously and smoothly connected to each other and are curved.
5. The structure of claim 1 , wherein the via comprises a portion extending laterally beyond a respective edge of the conductive line.
6. The structure of claim 1 , wherein the first top surface and the second top surface have a height difference greater than about 1 nm.
7. The structure of claim 1 , wherein the first metal cap and the second metal cap have a same thickness.
8. The structure of claim 1 , wherein the first metal cap and the second metal cap have different thicknesses.
9. A structure comprising:
a dielectric layer;
a conductive line in the dielectric layer, wherein the conductive line comprises a first top surface and a second top surface lower than the first top surface, and a sidewall connecting the first top surface to the second top surface;
a first metal cap over and contacting the first top surface of the conductive line;
a second metal cap contacting the second top surface and the sidewall of the conductive line; and
a via with a portion overlying the second top surface of the conductive line, wherein the via is in contact with the second metal cap.
10. The structure of claim 9 , wherein the first metal cap and the second metal cap have a same thickness.
11. The structure of claim 9 , wherein the first metal cap and the second metal cap have different thicknesses.
12. The structure of claim 9 , wherein the first metal cap and the second metal cap comprise same elements.
13. The structure of claim 9 , wherein the first metal cap and the second metal cap have different compositions.
14. The structure of claim 9 , wherein the second metal cap is curved.
15. A structure comprising:
a dielectric layer;
a conductive line in the dielectric layer;
a metal cap over the conductive line, wherein the metal cap comprises:
a first portion having a substantially planar top surface; and
a second portion extending from the substantially planar top surface to an edge of the conductive line, wherein the second portion comprises a curved top surface; and
a via comprising:
a first portion over the conductive line; and
a second portion extending into the dielectric layer, wherein the second portion of the via has a bottom surface in physical contact with the curved top surface.
16. The structure of claim 15 , wherein the via further comprises a third portion lower than the curved top surface, and the third portion is vertically misaligned from the conductive line.
17. The structure of claim 16 , wherein a bottom surface of the third portion of the via is in physical contact with the dielectric layer.
18. The structure of claim 15 , wherein the conductive line comprises:
a diffusion barrier layer; and
a metal-containing material over the diffusion barrier layer, wherein the metal cap has a bottom surface in contact with both a top surface of the diffusion barrier layer and a top surface of the metal-containing material.
19. The structure of claim 18 , wherein the metal cap is in contact with a curved top surface of the metal-containing material.
20. The structure of claim 15 , wherein the first portion and the second portion of the metal cap have different compositions.