Light emitting device and method of manufacturing light emitting device
A light emitting device includes at least one semiconductor light emitting element, and a wavelength conversion layer which is formed on a surface of the semiconductor light emitting element and which includes a resin layer containing a wavelength conversion member for converting a wavelength of light emitted from the semiconductor light emitting element. The wavelength conversion layer covers an upper surface or the upper surface and a side surface of the semiconductor light emitting element. A content of an inorganic material including the wavelength conversion member, or a content of an inorganic material including the wavelength conversion member and an inorganic filler, in the resin layer is 30% by mass or more and 99% by mass or less.
1. A light emitting device comprising:
at least one semiconductor light emitting element;
a pair of electrodes projecting from a lower surface of the semiconductor light emitting element;
a protective layer covering a part of a side surface of the semiconductor light emitting element and a part of a side surface of each of the electrodes; and
a wavelength conversion layer including a resin layer containing a wavelength conversion member for converting a wavelength of light emitted from the semiconductor light emitting element, the wavelength conversion layer covering the protective layer, a part of the side surface of the semiconductor light emitting element that is not covered by the protective layer, and an upper surface of the semiconductor light emitting element without the wavelength conversion layer contacting the electrodes, wherein
a content of an inorganic material including the wavelength conversion member, or a content of an inorganic material including the wavelength conversion member and an inorganic filler, in the resin layer is 30% by mass or more and 99% by mass or less.
2. The light emitting device according to claim 1 , wherein
a thickest portion of the resin layer is equal to or less than 500 μm in thickness, a lower end portion of the wavelength conversion layer is equal to or less than 200 μm in thickness, and the lower end portion has a thickness less than the thickness of the thickest portion, and
a thickness of a portion of the wavelength conversion layer covering the upper surface of the semiconductor light emitting element is greater than a thickness of a portion of the wavelength conversion layer covering the side surface of the semiconductor light emitting element.
3. The light emitting device according claim 1 , wherein
the wavelength conversion layer has a structure having a plurality of stacked layers each having a different ratio of the inorganic material.
4. The light emitting device according to claim 3 , wherein
the ratio of the inorganic material of at least one of the plurality of the stacked layers in the wavelength conversion layer is equal to or more than 50% by mass.
5. The light emitting device according to claim 1 , wherein
the wavelength conversion member has an average grain diameter of 1 μm to 50 μm.
6. The light emitting device according to claim 3 , wherein
the plurality of stacked layers include a plurality of inorganic material rich layers each having a high inorganic material ratio and a plurality of clear layers having a low inorganic material ratio alternately stacked on each other.
7. The light emitting device according to claim 1 , wherein
the resin layer is made of thermosetting resin.
8. The light emitting device according to claim 1 , wherein
the content of the inorganic material including the wavelength conversion member, or the content of the inorganic material including the wavelength conversion member and the inorganic filler, in the resin layer is 50% by mass or more and 90% by mass or less.
9. The light emitting device according to claim 1 , wherein
the content of the inorganic material including the wavelength conversion member, or the content of the inorganic material including the wavelength conversion member and the inorganic filler, in the resin layer is 60% by mass or more and 85% by mass or less.
10. The light emitting device according to claim 1 , wherein
the light emitting device is mounted on a mounting substrate.
11. The light emitting device according to claim 10 , wherein
a region in an upper surface of the mounting substrate except for a mounting region for the light emitting device is covered with an insulating reflection layer.
12. The light emitting device according to claim 10 , further comprising
a light-transmissive sealing member sealing the light emitting device.
13. The light emitting device according claim 2 , wherein
the wavelength conversion layer has a structure having a plurality of stacked layers each having a different ratio of the inorganic material.
14. The light emitting device according to claim 13 , wherein
the ratio of the inorganic material of at least one of the plurality of the stacked layers in the wavelength conversion layer is equal to or more than 50% by mass.
15. The light emitting device according to claim 14 , wherein
the wavelength conversion member has an average grain diameter of 1 μm to 50 μm.
16. The light emitting device according to claim 15 , wherein
the plurality of stacked layers include a plurality of inorganic material rich layers each having a high inorganic material ratio and a plurality of clear layers having a low inorganic material ratio alternately stacked on each other.
17. The light emitting device according to claim 16 , wherein
the resin layer is made of thermosetting resin.
18. The light emitting device according to claim 17 , wherein
the content of the inorganic material including the wavelength conversion member, or the content of the inorganic material including the wavelength conversion member and the inorganic filler, in the resin layer is 50% by mass or more and 90% by mass or less.
19. The light emitting device according to claim 18 , wherein
the content of the inorganic material including the wavelength conversion member, or the content of the inorganic material including the wavelength conversion member and the inorganic filler, in the resin layer is 60% by mass or more and 85% by mass or less.
20. The light emitting device according to claim 2 , wherein
the light emitting device is mounted on a mounting substrate.
21. The light emitting device according to claim 20 , wherein
a region in an upper surface of the mounting substrate except for a mounting region for the light emitting device is covered with an insulating reflection layer.
22. The light emitting device according to claim 21 , further comprising
a light-transmissive sealing member sealing the light emitting device.
23. The light emitting device according to claim 1 , wherein
the semiconductor light emitting element includes a substrate and a semiconductor stacked layer, and
the protective layer covers the part of the side surface of the semiconductor light emitting element corresponding to the semiconductor stacked layer.
24. The light emitting device according to claim 1 , wherein
the semiconductor light emitting element includes a substrate and a semiconductor stacked layer, and
a side surface of the protective layer is substantially flush with a part of the side surface of the semiconductor light emitting element corresponding to the substrate.