Image sensor
An image sensor includes a pixel array chip, a logic chip, and an interposed layer. The interposed layer is disposed on the pixel array chip. The logic chip is disposed on the interposed layer. The interposed layer includes a connecting part, a shielding part, and a metal-diffusion barrier layer. The connecting part electrically connects a first interconnection wire of the pixel array chip and a second interconnection wire of the logic chip. The connecting part includes a first metallic element. The shielding part is disposed spatially apart from the connecting part and electrically grounded to suppress an electrical coupling between the pixel array chip and the logic chip. The shielding part includes a second metallic element. The metal-diffusion barrier layer is disposed on top and bottom surfaces of the interposed layer to limit diffusion of electrical charges to the pixel array chip and the logic chip.
1. An image sensor, comprising:
a pixel array chip;
an interposed layer disposed on the pixel array chip; and
a logic chip disposed on the interposed layer,
wherein the interposed layer comprises:
first and second insulating layers stacked on top of one another;
a connecting part electrically connecting a first interconnection wire of the pixel array chip and a second interconnection wire of the logic chip;
a shielding part disposed spatially apart from the connecting part in the interposed layer; and
a first metal-diffusion barrier layer provided between the first and second insulating layers,
wherein the connecting part comprises:
a first connection pattern disposed in the first insulating layer; and
second connection patterns disposed in the second insulating layer,
wherein the second connection patterns are directly connected to the first connection pattern in the first metal-diffusion barrier layer, and
wherein a portion of the second insulating layer extends through the connecting part.
2. The image sensor of claim 1 , wherein the pixel array chip comprises at least one photoelectric conversion device.
3. The image sensor of claim 1 , wherein each of the connecting part and the shielding part is formed of copper (Cu) or tungsten (W).
4. The image sensor of claim 1 , wherein each of the connecting part and the shielding part is provided to penetrate the first and second insulating layers.
5. The image sensor of claim 1 , wherein at least one second metal-diffusion barrier layer is provided on top and bottom surfaces of the interposed layer.
6. The image sensor of claim 1 ,
wherein the shielding part comprises a first shielding pattern and a second shielding pattern,
wherein the first shielding pattern is provided in the first insulating layer and spaced apart from the first connection pattern, and
wherein the second shielding pattern is provided in the second insulating layer and spaced apart from the second connection patterns.
7. The image sensor of claim 6 , wherein the first connection pattern and the second connection patterns are in contact with each other.
8. The image sensor of claim 6 , wherein the first shielding pattern and the second shielding pattern are electrically connected to each other.
9. The image sensor of claim 1 , wherein the second connection patterns are disposed on a first surface of the first connection pattern,
wherein the first connection pattern is formed of a conductive material except a first portion, and
wherein the first portion is formed from a portion of the first surface toward the inside of the first connection pattern.
10. The image sensor of claim 1 , wherein the first metal-diffusion barrier layer is formed from at least one of silicon mononitride (SiN), silicon carbonitride (SiCN), silicon oxycarbonitride (SiOCN), silicon oxynitride (SiON), or silicon carbide (SiC).