Light emitting element and light emitting device
A high efficient white emission light emitting element having peak intensity in each wavelength region of red, green, and blue is provided. Specifically, a white emission light emitting element having an emission spectrum that is independent of current density is provided. A first light emitting layer 312 exhibiting blue emission and a second light emitting layer 313 containing a phosphorescent material that generates simultaneously phosphorescent emission and excimer emission are combined. In order to derive excimer emission from the phosphorescent material, it is effective to disperse a phosphorescent material 323 having a high planarity structure such as platinum complex at a high concentration of at least 10 wt % to a host material 322 . Further, the first light emitting layer 312 is provided to be in contact with the second light emitting layer 313 at the side of an anode. Ionization potential of the second light emitting layer 313 is preferably larger by 0.4 eV than that of the first light emitting layer 312.
1. A light emitting device comprising:
an anode and a cathode;
a first light emitting layer between the anode and the cathode, the first light emitting layer comprising a first host material and a blue-emissive guest material; and
a second light emitting layer between the first light emitting layer and the cathode, the second light emitting layer being in contact with the first light emitting layer and containing a host material and a phosphorescent material,
wherein the phosphorescent material simultaneously generates phosphorescent emission in green wavelength region and excimer emission in red wavelength region,
wherein the blue-emissive guest material is dispersed in the first host material, and
wherein ionization potential of the second light emitting layer is larger by 0.4 eV than that of the blue-emissive guest material.
2. The light emitting device according to claim 1 , wherein the first light emitting layer exhibits blue emission.
3. The light emitting device according to claim 1 , wherein the phosphorescent material is an organic metal complex with platinum as a central metal.
4. The light emitting device according to claim 3 , wherein the organic metal complex is selected from
5. The light emitting device according to claim 1 , wherein the first light emitting layer has an emission peak in a wavelength region from 400 nm to 500 nm.
6. The light emitting device according to claim 5 , wherein the phosphorescent material has at least two emission peaks at a wavelength region from 500 nm to 700 nm, and at least one of the emission peaks corresponds to the excimer emission.
7. The light emitting device according to claim 1 , wherein the phosphorescent material is dispersed in the host material at a concentration of at least 15 wt %.
8. The light emitting device according to claim 1 , wherein the light emitting device emits white light.
9. The light emitting device according to claim 1 , further comprising a hole injecting layer between the anode and the first light emitting layer.
10. The light emitting device according to claim 9 , wherein the hole injecting layer comprises a metal oxide.
11. An electric appliance comprising the light emitting device according to claim 1 .
12. A semiconductor device comprising the light emitting device according to claim 1 .
13. A light emitting device comprising:
a first electrode;
a first light emitting layer over the first electrode, the first light emitting layer comprising a first host material and a blue-emissive guest material;
a second light emitting layer over and in contact with the first light emitting layer, the second light emitting layer containing a host material and a phosphorescent material, and
a second electrode over the second light emitting layer,
wherein the phosphorescent material simultaneously generates phosphorescent emission in green wavelength region and excimer emission in red wavelength region,
wherein the blue-emissive guest material is dispersed in the first host material, and
wherein ionization potential of the second light emitting layer is larger by 0.4 eV than that of the blue-emissive guest material.
14. The light emitting device according to claim 13 , wherein the first light emitting layer exhibits blue emission.
15. The light emitting device according to claim 13 , wherein the phosphorescent material is an organic metal complex with platinum as a central metal.
16. The light emitting device according to claim 15 , wherein the organic metal complex is selected from
17. The light emitting device according to claim 13 , wherein the first light emitting layer has an emission peak in a wavelength region from 400 nm to 500 nm.
18. The light emitting device according to claim 17 , wherein the phosphorescent material has at least two emission peaks at a wavelength region from 500 nm to 700 nm, and at least one of the emission peaks corresponds to the excimer emission.
19. The light emitting device according to claim 13 , wherein the phosphorescent material is dispersed in the host material at a concentration of at least 15 wt %.
20. The light emitting device according to claim 13 , wherein the light emitting device emits white light.
21. The light emitting device according to claim 13 , further comprising a hole injecting layer over and in contact with the first electrode.
22. The light emitting device according to claim 21 , wherein the hole injecting layer comprises a metal oxide.
23. An electric appliance comprising the light emitting device according to claim 13 .
24. A semiconductor device comprising the light emitting device according to claim 13 .