IP Library › Granted Patent US 9,711,749
Granted Patent B2
US 9,711,749 · App. 14/812,780 · Granted Jul 18, 2017

Organic light emitting display apparatus and method for manufacturing the same

Inventor: Eunjung Park (Goyang-si, KR)
Assignee: LG DISPLAY CO., LTD.
H01L51/5088H01L27/3246H01L51/0026H01L51/5012H01L51/5056H01L51/5072H01L51/56H01L2251/558
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Quick Facts
Patent No.
US 9,711,749
App. No.
14/812,780
Granted
Jul 18, 2017
Kind
B2
Abstract

An organic light emitting display (OLED) device, and a method for manufacturing the OLED device are discussed. The OLED device according to one embodiment includes a substrate; an anode formed on the substrate; a bank formed on the substrate to partially overlap the anode; an organic light emitting element including a portion of a common layer on the anode and another portion of the common layer on the bank, the portion of the common layer on the bank being thinner than the another portion of the common layer on the anode; and a cathode fanned above the portion of the common layer on the anode and the another portion of the common layer on the bank.

Claims (32)

1. An organic light emitting display (OLED) device comprising:

a substrate;

an anode on the substrate;

a bank on the substrate to partially overlap the anode;

an organic light emitting element including a common layer on the anode and the bank, a thickness of the common layer on the bank being smaller than a thickness of the common layer on the anode; and

a cathode above the common layer on the anode and the bank,

wherein the common layer included in the organic light emitting element includes a first organic light emission layer, a n-type charge generation layer on the light emission layer, a p-type charge generation layer on the n-type charge generation layer, and a second organic light emission layer on the p-type charge generation layer, and

wherein a thickness of each of the n-type charge generation layer and the p-type charge generation layer on the bank is smaller, respectively, than a thickness of each of the n-type charge generation layer and the p-type charge generation layer on the anode.

2. The OLED device according to claim 1 , wherein the common layer included in the organic light emitting element further includes a hole injection layer.

3. The OLED device according to claim 2 , wherein a thickness of the hole injection layer on a starting point of the bank is greater than a thickness of the hole injection layer on a center of the anode, and

wherein a thickness of the hole injection layer on a center of the bank is smaller than the thickness of the hole injection layer on the center of the anode.

4. The OLED device according to claim 1 , wherein the common layer on a portion of the bank overlapping the anode includes the first organic light emitting layer and the second organic light emitting layer and

the common layer on a center of the bank does not include the first organic light emitting layer and the second organic light emitting layer.

5. The OLED device according to claim 1 , wherein the common layer included in the organic light emitting element further includes a hole injection layer, a hole transporting layer, and an electron transporting layer.

6. The OLED device according to claim 5 , wherein a thickness of each of the hole injection layer, the hole transporting layer, the organic light emitting layer, and the electron transporting layer on the bank is smaller, respectively, than a thickness of each of the hole injection layer, the hole transporting layer, and the electron transporting layer on the anode.

7. The OLED device according to claim 5 , wherein the hole injection layer extends from the anode and ascends to the bank, and has a smaller thickness on the bank than a thickness on a starting point of the bank.

8. The OLED device according to claim 1 , wherein a thickness of each of the n-type charge generation layer and the p-type charge generation layer on a starting point of the bank is greater, respectively, than a thickness of each of the n-type charge generation layer and the p-type charge generation layer on a center of the anode.

9. The OLED device according to claim 1 , wherein the n-type charge generation layer is doped with a conductive material in an amount of 2.0% or more of a weight of the n-type charge generation layer.

10. A method for manufacturing an organic light emitting display (OLED) device, the method comprising:

forming an anode on a substrate;

forming a bank on the substrate to partially overlap the anode;

forming an organic light emitting element including a common layer on the anode and the bank, a thickness of the common layer on the bank being smaller than a thickness of the common layer on the anode; and

forming a cathode above the common layer on the anode and the bank,

wherein the common layer included in the organic light emitting element includes a first organic light emission layer, an n-type charge generation layer on the light emission layer, a p-type charge generation layer on the n-type charge generation layer, and a second organic light emission layer on the p-type charge generation layer, and

wherein a thickness of each of the n-type charge generation layer and the p-type charge generation layer on the bank is smaller, respectively, than a thickness of each of the n-type charge generation layer and the p-type charge generation layer on the anode.

11. The method according to claim 10 ,

wherein at least one of the first organic light emission layer and the second organic light emission layer is formed by a heat treatment including irradiating a laser beam to the bank while forming the organic light emission element.

12. The method according to claim 11 ,

wherein heat treatment causes some material in the common layer to flow down and gather at a base of the bank.

13. The method according to claim 10 , wherein the common layer included in the organic light emitting element further includes a hole injection layer.

14. The method according to claim 13 , wherein a thickness of the hole injection layer on a starting point of the bank is greater than a thickness of the hole injection layer on a center of the anode, and

wherein a thickness of the hole injection layer on the center of the bank is smaller than the thickness of the hole injection layer on a center of the anode.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 11, 2015
From: PARK, EUNJUNG
To: LG DISPLAY CO., LTD.
Reel/Frame 036545/0187 →
Priority Claims (1)
KR 10-2014-0170330 · Dec 2, 2014 · national
Continuity (1)
Related Publication 20160155978A1 · Jun 2, 2016