Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes an n + type silicon carbide substrate, and in the substrate an active region where primary current flows and an edge termination area surrounding the active region. The semiconductor device has a first p-type region and a second p-type region in the edge termination area, and the first p-type region includes therein a plurality of third p-type regions, and the second p-type region includes therein a plurality of fourth p-type regions. The widths between the respective plurality of third p-type regions and the widths between the respective plurality of fourth p-type regions become greater further away from the active region.
1. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type made of a semiconductor having a wider bandgap than silicon;
a semiconductor film of the first conductivity type deposited on a front surface of the semiconductor substrate, the semiconductor film being made of a semiconductor having a wider bandgap than silicon and having a lower impurity concentration than the semiconductor substrate;
an active region including a metal semiconductor junction or a compound structure of a metal semiconductor junction and an insulating semiconductor junction in a front surface layer of the semiconductor film that is opposite to the front surface of the semiconductor substrate;
an edge termination area surrounding the active region defined in the front surface layer of the semiconductor film;
a first second-conductivity type region at least partially surrounding the active region;
a second second-conductivity region in the edge termination area and surrounding the first second-conductivity type region;
a plurality of third second-conductivity type regions having equal widths and disposed within the second second-conductivity type region at prescribed gaps from one another, said prescribed gaps becoming wider further away from the active region, the third second-conductivity type regions having a higher impurity concentration than the second second-conductivity type region and a lower impurity concentration than the first second-conductivity type region;
a fourth second-conductivity type region in the edge termination area and surrounding the second second-conductivity type region, said fourth second-conductivity type region having a lower impurity concentration than the second second-conductivity type region; and
a plurality of fifth second-conductivity type regions disposed within the fourth second-conductivity type region at prescribed gaps from one another, said prescribed gaps of the fifth second-conductivity type regions becoming wider further away from the active region, the fifth second-conductivity type regions having a higher impurity concentration than the fourth second-conductivity type region and a lower impurity concentration than the first second-conductivity type region.
2. The semiconductor device according to claim 1 , wherein the plurality of third second-conductivity type regions have a higher impurity concentration than the plurality of fifth second-conductivity type regions.
3. The semiconductor device according to claim 1 , wherein an amount of the plurality of third second-conductivity type regions is smaller than an amount of the plurality of fifth second-conductivity type regions.
4. The semiconductor device according to claim 1 , wherein, in the plurality of third second-conductivity type regions, a gap between the nth region from the active region and the (n+1)th region is narrower than a gap within the plurality of fifth second-conductivity type regions between the nth region from the active region and the (n+1)th region from the active region.
5. The semiconductor device according to claim 1 , wherein, among the plurality of fifth second-conductivity type regions and the widths thereof, a width of a 1st fifth second-conductivity type region is greater than a width of other fifth second-conductivity type regions.
6. The semiconductor device according to claim 5 , wherein, in the plurality of fifth second-conductivity type regions, the 1st fifth second-conductivity type region is at a boundary between the second second-conductivity type region and the fourth second-conductivity type region.
7. The semiconductor device according to claim 1 , wherein the plurality of fifth second-conductivity type regions has a higher impurity concentration than the second second-conductivity type region.
8. The semiconductor device according to claim 1 , wherein portions of the second second-conductivity type region where the third second-conductivity type regions are respectively disposed are deeper than other portions of the second second-conductivity type region.
9. The semiconductor device according to claim 1 , wherein portions of the fourth second-conductivity type region where the fifth second-conductivity type regions are respectively disposed are deeper than other portions of the fourth second-conductivity type region.
10. The semiconductor device according to claim 1 , wherein the semiconductor having a wider bandgap than silicon is silicon carbide.