Method for manufacturing semiconductor device
Provided is a transistor containing a semiconductor with low density of defect states, a transistor having a small subthreshold swing value, a transistor having a small short-channel effect, a transistor having normally-off electrical characteristics, a transistor having a low leakage current in an off state, a transistor having excellent electrical characteristics, a transistor having high reliability, or a transistor having excellent frequency characteristics. An insulator is formed, a layer is formed over the insulator, oxygen is added to the insulator through the layer, the layer is removed, an oxide semiconductor is formed over the insulator to which the oxygen is added, and a semiconductor element is formed using the oxide semiconductor.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming an insulator;
forming a layer over the insulator;
adding oxygen to the insulator through the layer;
after adding the oxygen, removing the layer;
after removing the layer, forming an oxide semiconductor over the insulator to which the oxygen is added; and
forming a semiconductor element comprising the oxide semiconductor.
2. The method for manufacturing a semiconductor device, according to claim 1 , wherein the layer contains a second oxide semiconductor.
3. The method for manufacturing a semiconductor device, according to claim 1 , wherein the layer is removed by wet etching.
4. The method for manufacturing a semiconductor device, according to claim 1 , wherein the insulator is an oxide comprising silicon.
5. The method for manufacturing a semiconductor device, according to claim 1 , further comprising the step of performing heat treatment after forming the oxide semiconductor.
6. The method for manufacturing a semiconductor device, according to claim 5 , wherein hydrogen in the oxide semiconductor and oxygen in the insulator are made to react with each other by the heat treatment to be released as water.
7. The method for manufacturing a semiconductor device, according to claim 1 , wherein the oxygen is added by an ion implantation method.
8. The method for manufacturing a semiconductor device, according to claim 1 , wherein the semiconductor element is a transistor.
9. The method for manufacturing a semiconductor device according to claim 1 , wherein the oxide semiconductor comprises indium, gallium, and zinc.
10. A method for manufacturing a semiconductor device, comprising the steps of:
forming an oxide insulator;
forming a layer over the oxide insulator;
adding oxygen to the oxide insulator through the layer;
after adding the oxygen, removing the layer;
after removing the layer, forming an oxide semiconductor over the oxide insulator to which the oxygen is added; and
forming a semiconductor element comprising the oxide semiconductor.
11. The method for manufacturing a semiconductor device, according to claim 10 , wherein the layer contains a second oxide semiconductor.
12. The method for manufacturing a semiconductor device, according to claim 10 , wherein the layer is removed by wet etching.
13. The method for manufacturing a semiconductor device, according to claim 10 , further comprising the step of performing heat treatment after forming the oxide semiconductor.
14. The method for manufacturing a semiconductor device, according to claim 13 , wherein hydrogen in the oxide semiconductor and oxygen in the oxide insulator are made to react with each other by the heat treatment to be released as water.
15. The method for manufacturing a semiconductor device, according to claim 10 , wherein the oxygen is added by an ion implantation method.
16. The method for manufacturing a semiconductor device, according to claim 10 , wherein the semiconductor element is a transistor.
17. The method for manufacturing a semiconductor device according to claim 10 , wherein the oxide semiconductor comprises indium, gallium, and zinc.
18. A method for manufacturing a semiconductor device, comprising:
forming an insulating layer containing an oxide;
forming a sacrificial layer containing an oxide semiconductor over the insulating layer;
adding molecular ions containing oxygen to the insulating layer through the sacrificial layer, so that excess oxygen exists in the insulating layer;
etching the sacrificial layer to remove the sacrificial layer from the insulating layer; and
forming an oxide semiconductor layer over the insulating layer; and
performing a heat treatment on the oxide semiconductor layer, so that the excess oxygen in the insulating layer moves to the oxide semiconductor layer.
19. The method according to claim 18 , wherein the oxide in the insulating layer contains at least one selected from Al, Mg, Si, Ga, Ge, Y, Zr, La, Nd, Hf and Ta.
20. The method according to claim 18 , wherein:
the oxide semiconductor in the sacrificial layer is an In—Ga—Zn oxide, and
the In—Ga—Zn oxide contains gallium twice or more as much as indium in an atomic ratio.
21. The method according to claim 18 , wherein the step of etching is performed by wet etching.
22. The method according to claim 18 , wherein a hydrogen concentration of the oxide semiconductor layer after the heat treatment is in a range of 1×10 16 atoms/cm 3 or higher and 5×10 18 atoms/cm 3 or lower.