Ion beam sputtering with ion assisted deposition for coatings on chamber components

1. A method comprising:

performing ion beam sputtering with ion assisted deposition to deposit a protective layer on at least one surface of a component, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the protective layer has a composition of 40-45 mol % of Y 2 O 3 , 5-10 mol % of ZrO 2 , 35-40 mol % of Er 2 O 3 , 5-10 mol % of Gd 2 O 3 , and 5-15 mol % of SiO 2 , and wherein a porosity of the protective layer is below 1%.

2. The method of claim 1 further comprising:

maintaining the component at a temperature in a range from about 100 degrees C. to about 400 degrees C. during the performing of the ion beam sputtering with ion assisted deposition.

3. The method of claim 1 , wherein the protective layer has a thickness of 0.2-20 μm, and wherein a deposition rate of 0.25-5 Angstroms per second is used to deposit the protective layer.

4. The method of claim 1 , wherein a voltage of 50-500V and a current of 1-300 A are used to perform the ion beam sputtering with ion assisted deposition.

5. The method of claim 1 , further comprising:

performing the ion beam sputtering with ion assisted deposition to deposit a second protective layer on the protective layer, wherein the second protective layer is an additional plasma resistant rare earth oxide film having a thickness of 0.2-30 μm, and wherein the protective layer comprises a coloring agent that causes the protective layer to have a different color than the second protective layer.

6. The method of claim 1 , wherein a deposition temperature is less than about 100 degrees C.

7. The method of claim 1 , wherein the component is a bulk sintered ceramic body comprising at least one of Al 2 O 3 , Y 2 O 3 , SiO 2 , SiN, Si, or SiC.

8. The method of claim 1 , wherein the protective layer has a composition of 40 mol % of Y 2 O 3 , 5 mol % of ZrO 2 , 35 mol % of Er 2 O 3 , 5 mol % of Gd 2 O 3 , and 15 mol % of SiO 2 .

9. The method of claim 1 , wherein the protective layer has a composition of 45 mol % of Y 2 O 3 , 5 mol % of ZrO 2 , 35 mol % of Er 2 O 3 , 10 mol % of Gd 2 O 3 , and 5 mol % of SiO 2 .

10. The method of claim 1 , wherein the protective layer has a composition of 40 mol % of Y 2 O 3 , 5 mol % of ZrO 2 , 40 mol % of Er 2 O 3 , 7 mol % of Gd 2 O 3 , and 8 mol % of SiO 2 .

11. The method of claim 1 , further comprising:

securing the component to a fixture prior to performing the ion beam sputtering;

rotating the fixture about one or more axes during the ion beam sputtering to adjust a position and orientation of the component.

12. The method of claim 1 , wherein the component has a diameter of about 12 inches, and wherein a film stress of the protective layer causes a curvature of less than about 50 microns over the diameter of the component.

13. The method of claim 1 , wherein the protective layer is a coating that adopts a microstructure of the component.

14. The method of claim 1 , wherein the component is a used component, the method further comprising:

polishing the component prior to performing the ion beam sputtering to remove a previous protective layer.

15. The method of claim 1 , wherein the ion beam sputtering with ion assisted deposition is performed using an angle of incidence of about 30 degrees and a working distance of about 50 inches.