Semiconductor chip and method for detecting disconnection of wire bonded to semiconductor chip

1. A semiconductor chip comprising:

a first electrode pad wire-bonded to a first lead terminal;

a second electrode pad wire-bonded to the first lead terminal;

a first current detector connected between the first electrode pad and the second electrode pad; and

a third electrode pad wire-bonded to a second lead terminal different from the first lead terminal,

wherein

a first closed circuit is configured by the first lead terminal, the first electrode pad, the first current detector, and the second electrode pad,

the first closed circuit is configured such that an induced current flows through the first closed circuit when a current generating an induced electromotive force is applied to the third electrode pad, and

the first current detector is configured to output different values depending on whether the induced current exceeds a threshold value or not.

2. The semiconductor chip according to claim 1 , further comprising a group of switches configured to switch at least between the following states (1) and (2), wherein:

state (1) is a state where the first electrode pad and the second electrode pad are electrically disconnected from a circuit in the semiconductor chip so as to configure the first closed circuit; and

the state (2) is a state where the first electrode pad and the second electrode pad are connected to the circuit in the semiconductor chip and not configuring the first closed circuit.

3. The semiconductor chip according to claim 2 , wherein

the first current detector comprises:

a first resistor connected between the first electrode pad and the second electrode pad; and

a first comparator configured to compare a voltage on a higher potential side and a voltage on a lower potential side of the first resistor.

4. The semiconductor chip according to claim 1 , further comprising:

a fourth electrode pad wire-bonded to the first lead terminal; and

a second current detector connected between the first electrode pad and the fourth electrode pad,

wherein

a second closed circuit is configured by the first lead terminal, the first electrode pad, the second current detector, and the fourth electrode pad,

the second closed circuit is configured such that an induced current flows through the second closed circuit when a current generating an induced electromotive force is applied to the third electrode pad, and

second current detector is configured to output different values depending on whether the induced current exceeds a threshold value or not.

5. The semiconductor chip according to claim 4 , further comprising a group of switches configured to switch among at least the following states (1), (2), and (3), wherein:

state (1) is a state where the first electrode pad, the second electrode pad, and the fourth electrode pad are electrically disconnected from a circuit in the semiconductor chip so as to configure the first closed circuit but not to configure the second closed circuit;

state (2) is a state where the first electrode pad, the second electrode pad, and the fourth electrode pad are electrically disconnected from the circuit in the semiconductor chip so as to configure the second closed circuit but not to configure the first closed circuit; and

state (3) is a state where the first electrode pad, the second electrode pad, and the fourth electrode pad are connected to the circuit in the semiconductor chip and configuring neither the first closed circuit nor the second closed circuit.

6. The semiconductor chip according to claim 5 , wherein

the first current detector comprises:

a first resistor connected between the first electrode pad and the second electrode pad; and

a first comparator configured to compare a voltage on a higher potential side and a voltage on a lower potential side of the first resistor, and

the second current detector comprises:

a second resistor connected between the first electrode pad and the fourth electrode pad; and

a second comparator configured to compare a voltage on a higher potential side and a voltage on a lower potential side of the second resistor.

7. A method for detecting disconnection of at least one wire arranged on a semiconductor chip comprising;

a first electrode pad to be wire-bonded to a first lead terminal;

a second electrode pad to be wire-bonded to the first lead terminal;

a first current detector connected between the first electrode pad and the second electrode pad; and

a third electrode pad to be wire-bonded to a second lead terminal different from the first lead terminal

the at least one wire comprises a wire with which a first electrode pad and a first lead terminal are wire-bonded and another wire with which a second electrode pad and a first lead terminal are wire-bonded, the method comprising:

applying a current generating an induced electromotive force to a third electrode pad from a second lead terminal; and

detecting an output from a first current detector at the time when the current generating the induced electromotive force is applied.

8. A method for detecting disconnection of at least one of a first wire and a second wire of a semiconductor chip, the method comprising:

providing a semiconductor chip comprising:

a first electrode pad to be wire-bonded to a lead terminal with the first wire;

a second electrode pad to be wire-bonded to the lead terminal with the second wire; and

a current detector connected between the first electrode pad and the second electrode pad,

wherein a closed circuit is configured by the lead terminal, the first wire, the first electrode pad, the current detector, the second electrode pad, and the second wire,

applying magnetic flux in a direction penetrating the closed circuit; and

detecting disconnection of at least one of the first wire and the second wire depending on an output value from the current detector in the applying of magnetic flux.