Solid-state image pickup element and image pickup apparatus
A solid-state image pickup element including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type.
1. An imaging device comprising:
a first pixel unit including a first photoelectric conversion region, a second photoelectric conversion region, and a first floating diffusion region shared by the first photoelectric conversion region and the second photoelectric conversion region;
a second pixel unit including a third photoelectric conversion region and a fourth photoelectric conversion region, and a second floating diffusion region shared by the third photoelectric conversion region and the fourth photoelectric conversion region;
an amplification transistor and a selection transistor disposed between the first pixel unit and the second pixel unit; and
in a plan view, a well contact separated from the amplification transistor by an insulator,
wherein,
in the plan view, the amplification transistor and the selection transistor are surrounded by an isolation region,
the well contact, the amplification transistor and the selection transistor are disposed in a row, in this order.
2. The imaging device of claim 1 , further comprising a first conductivity type region beneath the insulator.
3. The imaging device of claim 2 , further comprising:
two regions of the second conductivity type of two of said transistors are disposed so as to face both sides of said contact portion, respectively; and
the insulator formed on a portion of the first conductivity type region, except for a portion between said two regions of the second conductivity type of said two transistors disposed so as to face both sides of said contact portion,
wherein,
the first conductivity type region has a planar pattern (a) connected to said two regions of the second conductivity type of said two transistors and (b) surrounding said contact portion in a portion.
4. The imaging device of claim 1 , wherein the amplifier transistor and the reset transistor are connected to a same power source.
5. The imaging device of claim 1 , wherein the first conductivity type region beneath the insulator is a P+ barrier region.
6. The imaging device of claim 1 comprising a barrier in the first conductivity type region between said contact portion and said photoelectric conversion region, said barrier acting against a minority carrier injected from said contact portion.
7. The imaging device of claim 6 , wherein said barrier is a region which is formed so as to surround said contact portion and a region of a second conductivity type of at least one of said transistors within the first conductivity type region, and has a lower potential than that of the first conductivity type region due to presence an impurity of the second conductivity type.
8. An electronic device including the imaging device of claim 1 .