Monolithic nano-cavity light source on lattice mismatched semiconductor substrate
An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type III-V semiconductor layer has a nanoscale area using nano-cavities. The optoelectronic light emission device is free of defects.
1. An optoelectronic light emission device comprising:
a gain region of at least one type semiconductor layer that is present in direct contact with a type IV semiconductor substrate, wherein the gain region of the type semiconductor layer has a nanoscale area with a width of 200 nm or less and a length of 200 nm or less, wherein the gain region is present in a pedestal having a height or 1 micron or less, the dimensions of the gain region providing that there are no defects present in the entirety of the gain region, the at least one type semiconductor layer including an epitaxially grown layer having two thicknesses, a first thickness portion measured from an upper surface of the semiconductor substrate that provides the gain region, and a second thickness portion covering a remainder of the semiconductor substrate having a lesser thickness than the first thickness portion.
2. The optoelectronic light emission device of claim 1 , further comprising a buffer layer present between the at least one type semiconductor layer and the semiconductor substrate.
3. The optoelectronic light emission device of claim 1 , wherein the semiconductor substrate is comprised of a silicon containing material, a germanium containing material or a combination thereof.
4. The optoelectronic light emission device of claim 1 , further comprising a metal electrode atop an upper surface of the gain region and dielectric material adjacent to the gain region, the dielectric material having an upper surface coplanar with an upper surface of the gain region.
5. The optoelectronic light emission device of claim 1 , further comprising an insulating layer present on at least sidewalls of the gain region and a metal layer present on the insulating layer, wherein the insulating layer and metal layer in combination with the at least one type III-V semiconductor layer of the gain region provide a waveguide to a nanocavity device.
6. The optoelectronic light emission device of claim 1 , wherein the device is a laser or a light emitting diode (LED) within a nanocavity.