Light emitting element and method of manufacturing the same
A light emitting element includes a crystal growth substrate formed in a flat shape and that has a translucency, a semiconductor layer that constitutes a light emitting element structure and is formed at a side of a first surface of the crystal growth substrate, irregularities formed on a second surface of the crystal growth substrate, the second surface being an opposite surface of the first surface, and a protective layer that has a translucency and a predetermined hardness and brittleness, and covers the irregularities formed on the second surface of the crystal growth substrate.
1. A light emitting element comprising: a crystal growth substrate formed in a flat shape and that has a translucency; a semiconductor layer that constitutes a light emitting element structure and is formed at a side of a first surface of the crystal growth substrate; irregularities formed on a second surface of the crystal growth substrate, the second surface being an opposite surface of the first surface; and a protective layer that has a translucency and a predetermined hardness and brittleness, and covers the irregularities formed on the second surface of the crystal growth substrate, wherein the protective layer comprises at least one of phosphors and light-scattering material, wherein the protective layer includes a flat surface parallel to the first surface wherein the protective layer comprises a mixed particles of combined body particles, in which mixtures of phosphors and dispersed binders are bound, and the combined body particles are dispersed in a glass, and wherein the dispersed binders are non-glass materials having a translucency and a binding property to the phosphors.
2. The light emitting element according to claim 1 , further comprising:
an optical thin film that covers an entire surface of a front surface side of the protective layer.
3. A method of manufacturing the light emitting element according to claim 1 , the method comprising:
a first process for forming the semiconductor layer at a side of a first surface of a wafer of the crystal growth substrate;
a second process for forming the irregularities on a second surface of the wafer of the crystal growth substrate;
a third process for forming the protective layer at a side of the second surface of the wafer of the crystal growth substrate, the protective layer covering and contacting the irregularities; and
a fourth process for dividing, the wafer of the crystal growth substrate, the semiconductor layer and the protective layer which are stacked, into a plurality of light emitting elements by adhering a wafer fixing tape to the protective layer and pressing a breaking blade of a breaking device against a dividing line portion on a surface of the protective layer via the wafer fixing tape.
4. The light emitting element according to claim 1 , wherein the protective layer includes the flat surface in a stacking direction of the light emitting element.
5. The light emitting element according to claim 1 , wherein the protective layer directly contacts the irregularities.
6. The light emitting element according to claim 1 , wherein the protective layer and the crystal growth substrate are sequentially stacked.
7. The light emitting element according to claim 1 , wherein the protective layer and the crystal growth substrate do not have a material disposed therebetween.
8. The light emitting element according to claim 1 , further comprising:
an optical thin film that contacts an entire surface of a front surface side of the protective layer.
9. The light emitting element according to claim 1 , further comprising:
an optical thin film that contacts and covers an entire surface of a front surface side of the protective layer.
10. The light emitting element according to claim 1 , wherein the protective layer comprises a sintered body having voids.
11. The light emitting element according to claim 1 , wherein a surface of the protective layer is flat compared with the irregularities of the second surface.
12. A light emitting element comprising: a crystal growth substrate formed in a flat shape and that has a translucency; a semiconductor layer that constitutes a light emitting element structure and is formed at a side of a first surface of the crystal growth substrate; irregularities formed on a second surface of the crystal growth substrate, the second surface being an opposite surface of the first surface; and a protective layer that has a translucency and a predetermined hardness and brittleness, wherein the protective layer comprises at least one of phosphors and light-scattering material, wherein the protective layer covers and contacts the irregularities formed on the second surface of the crystal growth substrate, wherein the protective layer includes a flat surface parallel to the first surface wherein the protective layer includes a flat surface parallel to the first surface, wherein the protective layer comprises a mixed particles of combined body particles, in which mixtures of phosphors and dispersed binders are bound, and the combined body particles are dispersed in a glass, and wherein the dispersed binders are non-glass materials having a translucency and a binding property to the phosphors.