IP Library › Granted Patent US 9,729,137
Granted Patent B2
US 9,729,137 · App. 14/936,167 · Granted Aug 8, 2017

Semiconductor circuit, voltage detection circuit, and voltage determination circuit

Inventor: Takashi Takemura (Kanagawa, JP)
Assignee: LAPIS SEMICONDUCTOR CO., LTD.
H03K17/223
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Quick Facts
Patent No.
US 9,729,137
App. No.
14/936,167
Granted
Aug 8, 2017
Kind
B2
Abstract

The present disclosure provides a semiconductor circuit including: a PMOS transistor that includes a first source connected to a power supply, a first drain, and a first gate to which a fixed potential is supplied; an output circuit that outputs a first output signal, which is a reset signal or a power-on signal, and that outputs a second output signal according to a potential of the first drain; a constant current source connected to the first drain; and an NMOS transistor that includes a second source to which a fixed potential is supplied, a second drain connected to the first drain, and a second gate to which the second output signal from the output circuit is applied.

Claims (7)

1. A semiconductor circuit comprising:

a PMOS transistor that includes a first source connected to a power supply, a first drain, and a first gate to which a fixed potential is supplied;

a control circuit comprising an NMOS transistor that includes a second source to which a fixed potential is supplied, a second drain connected to the first drain, and a second gate; and

an output circuit that outputs a first output signal, which is a reset signal or a power-on signal, and outputs a second output signal according to a potential of the first drain,

wherein, according to the second output signal which is output from the output circuit, the control circuit controls the NMOS transistor so as to increase a reference current flowing in the PMOS transistor such that a threshold voltage of the PMOS transistor increases in a case in which the power supply is in a rising state, and controls the NMOS transistor so as to decrease the reference current flowing in the PMOS transistor such that the threshold voltage of the PMOS transistor decreases in a case in which the power supply is in a falling state.

2. The semiconductor circuit according to claim 1 , wherein the control circuit further includes a constant current source which is connected to the first drain.

3. The semiconductor circuit according to claim 2 , wherein the constant current source is a second NMOS transistor that includes a third source to which a fixed potential is supplied, a third drain connected to the first drain, and a third gate to which a bias potential is applied.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2015
From: TAKEMURA, TAKASHI
To: LAPIS SEMICONDUCTOR CO., LTD.
Reel/Frame 036995/0346 →
Priority Claims (2)
JP 2014-229257 · Nov 11, 2014 · national
JP 2015-058521 · Mar 20, 2015 · national
Continuity (1)
Related Publication 20160134274A1 · May 12, 2016